How it Works
MOTOROLA
Loading...
MC74HC139AFL1
Datasheet
8 pgs153.44 Kb0

MOTOROLA MC74HC139AN, MC74HC139AF, MC74HC139AFEL, MC74HC139AFL1, MC74HC139AFL2 Datasheet

...
Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 7
1 Publication Order Number:
MC74HC139A/D
MC74HC139A
Dual 1-of-4 Decoder/ Demultiplexer
High–Performance Silicon–Gate CMOS
This device consists of two independent 1–of–4 decoders, each of which decodes a two–bit Address to one–of–four active–low outputs. Active–low Selects are provided to facilitate the demultiplexing and cascading functions. The demultiplexing function is accomplished by using the Address inputs to select the desired device output, and utilizing the Select as a data input.
• Output Drive Capability: 10 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 100 FETs or 25 Equivalent Gates
LOGIC DIAGRAM
A0
a
A1
a
SELECT
a
A0
b
A1
b
1
SELECT
b
Y0
a
Y1
a
Y2
a
Y3
a
Y0
b
Y1
b
Y2
b
Y3
b
ACTIVE–LOW
OUTPUTS
ADDRESS
INPUTS
PIN 16 = V
CC
PIN 8 = GND
ACTIVE–LOW
OUTPUTS
3
2
ADDRESS
INPUTS
13
14
15
4 5 6 7
12 11 10
9
FUNCTION TABLE
Inputs Outputs
Select A1 A0 Y0 Y1 Y2 Y3
HXXHHHH LLLLHHH LLHHLHH LHLHHLH LHHHHHL
X = don’t care
SO–16
D SUFFIX
CASE 751B
http://onsemi.com
1
16
PDIP–16 N SUFFIX CASE 648
1
16
MARKING
DIAGRAMS
1
16
MC74HC139AN
AWLYYWW
1
16
HC139A
AWLYWW
A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week
Device Package Shipping
ORDERING INFORMATION
MC74HC139AN PDIP–16 2000 / Box MC74HC139AD SOIC–16
48 / Rail
MC74HC139ADR2 SOIC–16 2500 / Reel
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
SELECT
a
A1
a
A0
a
GND
A1
b
A0
b
SELECT
b
V
CC
Y0
a
Y1
a
Y2
a
Y3
a
Y0
b
Y1
b
Y2
b
Y3
b
MC74HC139A
http://onsemi.com
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
P
D
Power Dissipation in Still Air, Plastic DIP†
SOIC Package†
750 500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
ÎÎ
Î
T
L
ОООООООООООО
Î
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
ÎÎÎ
Î
260
Î
Î
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
ÎÎ
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
ÎÎ
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
ÎÎ
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
ÎÎ
+ 125
_
C
ÎÎ
Î
tr, t
f
ООООООООООООО
Î
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
Î
Î
0 0 0
ÎÎ
ÎÎ
1000
500 400
Î
Î
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
ÎÎ
Î
Symbol
ООООООО
Î
Parameter
ООООООО
Î
Test Conditions
ÎÎ
Î
V
CC V
ÎÎ
Î
– 55 to
25_C
ÎÎÎ
Î
Î
Î
v
85_C
ÎÎ
Î
v
125_C
Î
Î
Unit
ÎÎ
Î
V
IH
ООООООО
Î
Minimum High–Level Input Voltage
ООООООО
Î
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
1.5
3.15
4.2
ÎÎÎ
Î
Î
Î
1.5
3.15
4.2
ÎÎ
Î
1.5
3.15
4.2
Î
Î
V
ÎÎ
Î
V
IL
ООООООО
Î
Maximum Low–Level Input Voltage
ООООООО
Î
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
0.5
1.35
1.8
ÎÎÎ
Î
Î
Î
0.5
1.35
1.8
ÎÎ
Î
0.5
1.35
1.8
Î
Î
V
ÎÎ
Î
ÎÎ
Î
V
OH
ООООООО
Î
ООООООО
Î
Minimum High–Level Output Voltage
ООООООО
Î
ООООООО
Î
Vin = VIH or V
IL
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
1.9
4.4
5.9
ÎÎÎ
Î
Î
Î
Î
Î
Î
1.9
4.4
5.9
ÎÎ
Î
ÎÎ
Î
1.9
4.4
5.9
Î
Î
Î
Î
V
Vin = VIH or VIL|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
3.98
5.48
ÎÎÎ
3.84
5.34
3.70
5.20
ÎÎ
Î
V
OL
ООООООО
Î
Maximum Low–Level Output Voltage
ООООООО
Î
Vin = VIH or V
IL
|I
out
| v 20 µA
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
0.1
0.1
0.1
ÎÎÎ
Î
Î
Î
0.1
0.1
0.1
ÎÎ
Î
0.1
0.1
0.1
Î
Î
V
ÎÎÎОООООООÎООООООО
Î
Vin = VIH or VIL|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
ÎÎ
Î
4.5
6.0
ÎÎ
Î
0.26
0.26
ÎÎÎ
Î
Î
Î
0.33
0.33
ÎÎ
Î
0.40
0.40
Î
Î
ÎÎ
Î
I
in
ООООООО
Î
Maximum Input Leakage Current
ООООООО
Î
Vin = VCC or GND
ÎÎ
Î
6.0
ÎÎ
Î
± 0.1
ÎÎÎ
Î
Î
Î
± 1.0
ÎÎ
Î
± 1.0
Î
Î
µA
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
out
= 0 µA
6.0
4
ÎÎÎ
40
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book
(DL129/D).
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
MC74HC139A
http://onsemi.com
3
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
ÎÎÎ
Î
Symbol
ОООООООООООООО
Î
Parameter
ÎÎ
Î
V
CC V
ÎÎ
Î
– 55 to
25_C
ÎÎÎ
Î
Î
Î
v
85_C
ÎÎ
Î
v
125_C
Î
Î
Unit
ÎÎÎ
Î
t
PLH
,
t
PHL
ОООООООООООООО
Î
Maximum Propagation Delay, Select to Output Y
(Figures 1 and 3)
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
115
23 20
ÎÎÎ
Î
Î
Î
145
29 25
ÎÎ
Î
175
35 30
Î
Î
ns
ÎÎÎ
Î
t
PLH
,
t
PHL
ОООООООООООООО
Î
Maximum Propagation Delay, Input A to Output Y
(Figures 2 and 3)
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
115
23 20
ÎÎÎ
Î
Î
Î
145
29 25
ÎÎ
Î
175
35 30
Î
Î
ns
ÎÎÎ
Î
t
TLH
,
t
THL
ОООООООООООООО
Î
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
75 15 13
ÎÎÎ
Î
Î
Î
95 19 16
ÎÎ
Î
110
22 19
Î
Î
ns
C
in
Maximum Input Capacitance
—
10
ÎÎÎ
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Decoder)*
55
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High–Speed CMOS Data Book (DL129/D).
SWITCHING W AVEFORMS
t
THL
t
TLH
Figure 1.
V
CC
GND
t
r
t
PHL
t
PLH
OUTPUT Y
SELECT
90%
50%
10%
90%
50%
10%
Figure 2.
50%
t
PHL
t
PLH
V
CC
GND
OUTPUT Y
50%
INPUT A
*Includes all probe and jig capacitance
Figure 3. Test Circuit
CL*
TEST POINT
DEVICE UNDER
TEST
OUTPUT
t
f
VALID VALID
Loading...
+ 5 hidden pages
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use