Motorola MC54HC688J, MC74HC688N, MC74HC688DW Datasheet
SEMICONDUCTOR TECHNICAL DATA
1
REV 6
Motorola, Inc. 1995
10/95
High–Performance Silicon–Gate CMOS
The MC54/74HC688 is identical in pinout to the LS688. The device inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
The HC688 compares two 8–bit binary or BCD words and indicates
whether or not they are equal. By using the Cascade Input, two or more of
the devices may be cascaded to compare words of more than 8 bits.
• Output Drive Capability: 10 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V
• Low Input Current: 1 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 116 FETs or 29 Equivalent Gates
LOGIC DIAGRAM
2
4
6
8
11
13
15
17
3
5
7
9
1
A0
A1
A2
A3
A4
A5
A6
A7
CASCADE
INPUT
PIN 20 = V
CC
PIN 10 = GND
19
A = B
OUTPUT
DATA
WORD
A
INPUTS
DATA
WORD
B
INPUTS
12
14
16
18
B0
B1
B2
B3
B4
B5
B6
B7
PIN ASSIGNMENT
FUNCTION TABLE
A2
A1
B0
A0
CASCADE
INPUT
GND
B3
A3
B2
B1 5
4
3
2
1
10
9
8
7
6
14
15
16
17
18
19
20
11
12
13
B6
A7
A = B
V
CC
B4
A5
B5
A6
Inputs Output
Data
Words Cascade A = B
A = B L L
A > B L H
A < B L H
X H H
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
1
20
1
20
1
20
ORDERING INFORMATION
MC54HCXXXJ
MC74HCXXXN
MC74HCXXXDW
Ceramic
Plastic
SOIC
MC54/74HC688
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
P
D
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
260
300
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time VCC = 2.0 V
(Figure 2) VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Input
Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low–Level Input
Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
V
OH
Minimum High–Level Output
Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
V
OL
Maximum Low–Level Output
Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
I
CC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
I
out
= 0 µA
6.0
8
80
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
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