Motorola MC54HC597J, MC74HC597N Datasheet

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SEMICONDUCTOR TECHNICAL DATA

1

REV 6

 Motorola, Inc. 1995

10/95

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High–Performance Silicon–Gate CMOS

The MC54/74HC597 is identical in pinout to the LS597. The device inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.

This device consists of an 8–bit input latch which feeds parallel data to an
8–bit shift register. Data can also be loaded serially (see Function Table).

The HC597 is similar in function to the HC589, which is a 3–state device.

• Output Drive Capability: 10 LSTTL Loads

• Outputs Directly Interface to CMOS, NMOS, and TTL

• Operating Voltage Range: 2 to 6 V

• Low Input Current: 1 µA

• High Noise Immunity Characteristic of CMOS Devices

• In Compliance with the Requirements Defined by JEDEC Standard

No. 7A

• Chip Complexity: 516 FETs or 129 Equivalent Gates

LOGIC DIAGRAM

SERIAL

DATA

INPUT

14

15
1
2
3
4
5
6
7

12

11
13
10

S

A

A
B
C
D
E

F
G
H

LATCH CLOCK

SHIFT CLOCK

SERIAL SHIFT/

PARALLEL LOAD

RESET

PARALLEL

DATA

INPUTS

INPUT
LATCH

SHIFT

REGISTER

PIN 16 = V

CC

PIN 8 = GND

9

Q

H

SERIAL

DATA

OUTPUT



PIN ASSIGNMENT

13

14

15

16

9

10

11

125

4

3

2

1

8

7

6

LATCH CLOCK

SERIAL SHIFT/
PARALLEL LOAD

S

A

A

V

CC

Q

H

RESET

SHIFT CLOCK

E

D

C

B

GND

H

G

F

D SUFFIX

SOIC PACKAGE

CASE 751B–05

N SUFFIX

PLASTIC PACKAGE

CASE 648–08

ORDERING INFORMATION

MC54HCXXXJ
MC74HCXXXN
MC74HCXXXD

Ceramic
Plastic
SOIC

1

16

1

16

J SUFFIX

CERAMIC PACKAGE

CASE 620–10

1

16

MC54/74HC597

MOTOROLA High–Speed CMOS Logic Data

DL129 — Rev 6

2

MAXIMUM RATINGS*

Symbol

Parameter

Value

Unit

V

CC

DC Supply Voltage (Referenced to GND)

– 0.5 to + 7.0

V

V

in

DC Input Voltage (Referenced to GND)

– 1.5 to VCC + 1.5

V

V

out

DC Output Voltage (Referenced to GND)

– 0.5 to VCC + 0.5

V

I

in

DC Input Current, per Pin

± 20

mA

I

out

DC Output Current, per Pin

± 25

mA

I

CC

DC Supply Current, VCC and GND Pins

± 50

mA

P

D

Power Dissipation in Still Air,Plastic or Ceramic DIP†

SOIC Package†

750
500

mW

T

stg

Storage Temperature

– 65 to + 150

_

C

T

L

Lead Temperature, 1 mm from Case for 10 Seconds

(Plastic DIP or SOIC Package)

(Ceramic DIP)

260
300

_

C

*Maximum Ratings are those values beyond which damage to the device may occur.

Functional operation should be restricted to the Recommended Operating Conditions.

†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C

— Ceramic DIP: – 10 mW/_C from 100_ to 125_C
— SOIC Package: – 7 mW/_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

V

CC

DC Supply Voltage (Referenced to GND)

2.0

6.0

V

Vin, V

out

DC Input Voltage, Output Voltage (Referenced to GND)

0

V

CC

V

T

A

Operating Temperature, All Package Types

– 55

+ 125

_

C

tr, t

f

Input Rise and Fall Time VCC = 2.0 V

(Figure 1) VCC = 4.5 V

VCC = 6.0 V

0
0
0

1000

500
400

ns

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Guaranteed Limit

Symbol

Parameter

Test Conditions

V

CC
V

– 55 to

25_C

v

85_Cv 125_C

Unit

V

IH

Minimum High–Level Input
Voltage

V

out

= 0.1 V or VCC – 0.1 V

|I

out

| v 20 µA

2.0

4.5

6.0

1.5

3.15

4.2

1.5

3.15

4.2

1.5

3.15

4.2

V

V

IL

Maximum Low–Level Input
Voltage

V

out

= 0.1 V or VCC – 0.1 V

|I

out

| v 20 µA

2.0

4.5

6.0

0.3

0.9

1.2

0.3

0.9

1.2

0.3

0.9

1.2

V

V

OH

Minimum High–Level Output
Voltage

Vin = VIH or V

IL

|I

out

| v 20 µA

2.0

4.5

6.0

1.9

4.4

5.9

1.9
4 4

5.9

1.9
4 4

5.9

V

Vin = VIH or VIL|I

out

| v 4.0 mA

|I

out

| v 5.2 mA

4.5

6.0

3.98

5.48

3.84

5.34

3.70

5.20

V

OL

Maximum Low–Level Output
Voltage

Vin = VIH or V

IL

|I

out

| v 20 µA

2.0

4.5

6.0

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

V

Vin = VIH or VIL|I

out

| v 4.0 mA

|I

out

| v 5.2 mA

4.5

6.0

0.26

0.26

0.33

0.33

0.40

0.40

I

in

Maximum Input Leakage Current

Vin = VCC or GND

6.0

± 0.1

± 1.0

± 1.0

µA

I

CC

Maximum Quiescent Supply
Current (per Package)

Vin = VCC or GND
I

out

= 0 µA

6.0

8

80

160

µA

NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir­cuit. For proper operation, Vin and
V

out

should be constrained to the

range GND v (Vin or V

out

) v VCC.

Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.

MC54/74HC597

High–Speed CMOS Logic Data
DL129 — Rev 6

3 MOTOROLA

AC ELECTRICAL CHARACTERISTICS (C

L

= 50 pF, Input tr = tf = 6 ns)

Guaranteed Limit

Symbol

Parameter

V

CC
V

– 55 to

25_C

v

85_Cv 125_C

Unit

f

max

Maximum Clock Frequency (50% Duty Cycle)

(Figures 2 and 8)

2.0

4.5

6.0

6.0
30
35

4.8
24
28

4.0
20
24

MHz

t

PLH

,

t

PHL

Maximum Propagation Delay, Latch Clock to Q

H

(Figures 1 and 8)

2.0

4.5

6.0

210

42
36

265

53
45

315

63
54

ns

t

PLH

,

t

PHL

Maximum Propagation Delay, Shift Clock to Q

H

(Figures 2 and 8)

2.0

4.5

6.0

175

35
30

220

44
37

265

53
45

ns

t

PHL

Maximum Propagation Delay, Reset to Q

H

(Figures 3 and 8)

2.0

4.5

6.0

175

35
30

220

44
37

265

53
45

ns

t

PLH

,

t

PHL

Maximum Propagation Delay, Serial Shift/Parallel Load to Q

H

(Figures 4 and 8)

2.0

4.5

6.0

175

35
30

220

44
37

265

53
45

ns

t

TLH

,

t

THL

Maximum Output Transition Time, Any Output

(Figures 1 and 8)

2.0

4.5

6.0

75
15
13

95
19
16

110

22
19

ns

C

in

Maximum Input Capacitance

—

10

10

10

pF

NOTES:

1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

C

PD

Power Dissipation Capacitance (Per Package)*

50

pF

*Used to determine the no–load dynamic power consumption: PD = CPD V

CC

2

f + ICC VCC. For load considerations, see Chapter 2 of the

Motorola High–Speed CMOS Data Book (DL129/D).

PIN DESCRIPTIONS

DATA INPUTS
A, B, C, D, E, F, G, H (Pins 15, 1, 2, 3, 4, 5, 6, 7)

Parallel data inputs. Data on these inputs is stored in the

input latch on the rising edge of the Latch Clock input.

SA (Pin 14)

Serial data input. Data on this input is shifted into the shift
register on the rising edge of the Shift Clock input it Serial
Shift/Parallel Load

is high. Data on this input is ignored when

Serial Shift/Parallel Load

is low.

CONTROL INPUTS
Serial Shift/Parallel Load

(Pin 13)

Shift register mode control. When a high level is applied to
this pin, the shift register is allowed to serially shift data.
When a low level is applied to this pin, the shift register
accepts parallel data from the input latch, and serial shifting
is inhibited.

Reset (Pin 10)

Asynchronous, Active–low shift register reset. A low level
applied to this input resets the shift register to a low level, but
does not change the data in the input latch.

Shift Clock (Pin 11)

Serial shift register clock. A low–to–high transition on this
input shifts data on the Serial Data Input into the shift register
and data in stage H is shifted out QH, being replaced by the
data previously stored in stage G.

Latch Clock (Pin 12)

Latch clock. A low–to–high transition on this input loads
the parallel data on inputs A–H into the input latch.

OUTPUT
QH (Pin 9)

Serial data output. This pin is the output from the last stage
of the shift register.