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SEMICONDUCTOR TECHNICAL DATA
High–Performance Silicon–Gate CMOS
The MC54/74HC573A is identical in pinout to the LS573. The devices are
compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
These latches appear transparent to data (i.e., the outputs change
asynchronously) when Latch Enable is high. When Latch Enable goes low,
data meeting the setup and hold time becomes latched.
The HC573A is identical in function to the HCT373A but has the data
inputs on the opposite side of the package from the outputs to facilitate PC
board layout.
The HC573A is the noninverting version of the HC563A.
• Output Drive Capability: 15 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 µA
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 218 FETs or 54.5 Equivalent Gates
J SUFFIX
20
1
20
1
20
1
20
1
ORDERING INFORMATION
MC54HCXXXAJ
MC74HCXXXAN
MC74HCXXXADW
MC74HCXXXADT
CERAMIC PACKAGE
CASE 732–03
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
DT SUFFIX
TSSOP PACKAGE
CASE 948E–02
Ceramic
Plastic
SOIC
TSSOP
LOGIC DIAGRAM
219
D0
3
D1
4
D2
DATA
INPUTS
LATCH ENABLE
OUTPUT ENABLE
Internal Gate Count*
Internal Gate Propagation Delay
ОООООООО
Internal Gate Power Dissipation
Speed Power Product
*Equivalent to a two–input NAND gate.
5
D3
6
D4
7
D5
8
D6
9
D7
11
1
Design Criteria
Q0
18
Q1
17
Q2
16
15
14
13
12
PIN 20 = V
PIN 10 = GND
NONINVERTING
Q3
Q4
Q5
Q6
Q7
CC
Value
54.5
1.5
ÎÎ
5.0
0.0075
OUTPUTS
Units
ea.
ns
ÎÎ
µW
pJ
PIN ASSIGNMENT
OUTPUT
ENABLE
D0
D1
D2
D3 5
D4
D5
D6
D7
GND
1
2
3
4
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
CC
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
LATCH
ENABLE
FUNCTION TABLE
Inputs Output
Output Latch
Enable Enable D Q
LHHH
LHLL
L L X No Change
HXXZ
X = Don’t Care
Z = High Impedance
10/96
Motorola, Inc. 1996
1
REV 7
MC54/74HC573A
MAXIMUM RATINGS*
Symbol
V
V
I
I
Î
T
Î
Î
DC Supply Voltage (Referenced to GND)
CC
V
DC Input Voltage (Referenced to GND)
in
DC Output Voltage (Referenced to GND)
out
I
DC Input Current, per Pin
in
DC Output Current, per Pin
out
DC Supply Current, VCC and GND Pins
CC
P
Power Dissipation in Still Air, Plastic or Ceramic DIP†
D
ОООООООООООО
Storage Temperature
stg
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
ОООООООООООО
ОООООООООООО
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: –10 mW/_C from 65_ to 125_C
Ceramic DIP: –10 mW/_C from 100_ to 125_C
SOIC Package: –7 mW/_C from 65_ to 125_C
TSSOP Package: –6.1 mW/°C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Parameter
SOIC Package†
TSSOP Package†
(Plastic DIP, TSSOP or SOIC Package)
(Ceramic DIP)
Value
– 0.5 to + 7.0
– 0.5 to VCC + 0.5
– 0.5 to VCC + 0.5
± 20
± 35
± 75
750
500
ÎÎÎÎ
450
– 65 to + 150
ÎÎÎÎ
260
300
ÎÎÎÎ
Unit
V
V
V
mA
mA
mA
mW
Î
_
C
_
C
Î
Î
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
should be constrained to the
out
range GND v (Vin or V
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
) v VCC.
out
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
Vin, V
T
A
tr, t
ÎÎ
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
out
Operating Temperature, All Package Types
Input Rise and Fall Time VCC = 2.0 V
f
(Figure 1) VCC = 4.5 V
ОООООООООООО
Parameter
VCC = 6.0 V
Min
2.0
0
– 55
0
0
Î
0
Max
6.0
V
CC
+ 125
1000
500
Î
400
Unit
V
V
_
C
ns
Î
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
V
Symbol
ÎÎ
V
IH
ÎÎ
ООООООО
Parameter
Minimum High–Level Input
Voltage
ООООООО
Test Conditions
ООООООО
V
= 0.1 V or VCC – 0.1 V
out
|I
| v 20 µA
out
ООООООО
CC
ÎÎ
2.0
3.0
ÎÎ
4.5
6.0
V
ÎÎ
ÎÎ
V
OH
ÎÎ
ÎÎÎОООООООÎООООООО
Maximum Low–Level Input
IL
ООООООО
Voltage
ООООООО
Minimum High–Level Output
Voltage
ООООООО
V
= 0.1 V or VCC – 0.1 V
out
ООООООО
|I
| v 20 µA
out
ООООООО
Vin = VIH or V
|I
| v 20 µA
out
ООООООО
Vin = VIH or V
IL
IL|Iout
|I
out
|I
out
| ≤ 2.4mA
| v 6.0 mA
| v 7.8 mA
2.0
ÎÎ
3.0
4.5
ÎÎ
6.0
2.0
4.5
ÎÎ
6.0
3.0
4.5
ÎÎ
6.0
NOTE:Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
– 55 to
V
25_C
ÎÎ
1.5
2.1
ÎÎ
3.15
4.2
0.5
ÎÎ
0.9
1.35
ÎÎ
1.8
1.9
4.4
ÎÎ
5.9
2.48
3.98
ÎÎ
5.48
v
85_C
ÎÎ
1.5
2.1
ÎÎ
3.15
4.2
0.5
ÎÎ
0.9
1.35
ÎÎ
1 8
1.9
4.4
ÎÎ
5.9
2.34
3.84
ÎÎ
5.34
v
125_C
ÎÎ
1.5
2.1
ÎÎ
3.15
4.2
0.5
ÎÎ
0.9
1.35
ÎÎ
1.8
1.9
4.4
ÎÎ
5.9
2.2
3.7
ÎÎ
5.2
Î
Î
Î
Î
Î
Î
Unit
V
V
V
MOTOROLA High–Speed CMOS Logic Data
2
DL129 — Rev 6
MC54/74HC573A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
V
ÎÎ
Symbol
V
OL
ÎÎ
ÎÎÎОООООООÎООООООО
I
in
I
OZ
ÎÎ
I
CC
ÎÎ
ООООООО
Parameter
Maximum Low–Level Output
Voltage
ООООООО
Maximum Input Leakage Current
Maximum Three–State Leakage
Current
ООООООО
Maximum Quiescent Supply
ООООООО
Current (per Package)
ООООООО
Test Conditions
V
= 0.1 V or VCC – 0.1 V
out
|I
| v 20 µA
out
ООООООО
Vin = VIH or V
IL|Iout
|I
| v 6.0 mA
out
|I
| v 7.8 mA
out
| ≤ 2.4mA
Vin = VCC or GND
Output in High–Impedance State
Vin = VIL or V
ООООООО
V
= VCC or GND
out
Vin = VCC or GND
ООООООО
II
I = 0 µA
out
IH
CC
ÎÎ
2.0
4.5
ÎÎ
6.0
3.0
4.5
ÎÎ
6.0
6.0
6.0
ÎÎ
6.0
ÎÎ
NOTE:Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
– 55 to
V
25_C
ÎÎ
0.1
0.1
ÎÎ
0.1
0.26
0.26
ÎÎ
0.26
± 0.1
– 0.5
ÎÎ
4.0
ÎÎ
ÎÎ
v
85_C
0.1
0.1
ÎÎ
0.1
0.33
0.33
ÎÎ
0.33
± 1.0
– 5.0
ÎÎ
40
ÎÎ
ÎÎ
v
125_C
0.1
0.1
ÎÎ
0.1
0.4
0.4
ÎÎ
0.4
± 1.0
– 10
ÎÎ
160
ÎÎ
Î
Î
Î
Î
Î
Unit
V
µA
µA
µA
AC ELECTRICAL CHARACTERISTICS (C
= 50 pF, Input tr = tf = 6.0 ns)
L
Guaranteed Limit
ÎÎ
Symbol
t
,
PLH
t
PHL
ÎÎ
ÎÎ
t
,
PLH
t
PHL
ÎÎ
ÎÎ
t
,
PLZ
t
PHZ
ÎÎ
ÎÎ
t
,
PZL
t
PZH
ÎÎ
ÎÎ
t
,
TLH
t
THL
ÎÎ
ÎÎ
C
in
C
out
V
ООООООООООООООО
Parameter
Maximum Propagation Delay, Input D to Q
(Figures 1 and 5)
ООООООООООООООО
ООООООООООООООО
Maximum Propagation Delay, Latch Enable to Q
(Figures 2 and 5)
ООООООООООООООО
ООООООООООООООО
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
ООООООООООООООО
ООООООООООООООО
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
ООООООООООООООО
ООООООООООООООО
Maximum Output Transition Time, Any Output
(Figures 1 and 5)
ООООООООООООООО
ООООООООООООООО
CC
ÎÎ
2.0
3.0
ÎÎ
4.5
ÎÎ
6.0
2.0
3.0
ÎÎ
4.5
6.0
ÎÎ
2.0
3.0
ÎÎ
4.5
6.0
ÎÎ
2.0
3.0
ÎÎ
4.5
6.0
ÎÎ
2.0
3.0
ÎÎ
4.5
6.0
ÎÎ
Maximum Input Capacitance
Maximum Three–State Output Capacitance (Output in High–Impedance State)
– 55 to
V
ÎÎ
25_C
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
150
100
30
26
160
105
32
27
150
100
30
26
150
100
30
26
60
27
12
10
10
15
ÎÎ
v
85_C
190
140
ÎÎ
38
ÎÎ
33
200
145
ÎÎ
40
34
ÎÎ
190
125
ÎÎ
38
33
ÎÎ
190
125
ÎÎ
38
33
ÎÎ
75
32
ÎÎ
15
13
ÎÎ
10
15
ÎÎ
v
125_C
225
180
ÎÎ
45
ÎÎ
38
240
190
ÎÎ
48
41
ÎÎ
225
150
ÎÎ
45
38
ÎÎ
225
150
ÎÎ
45
38
ÎÎ
90
36
ÎÎ
18
15
ÎÎ
10
15
Î
Unit
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
pF
pF
ns
ns
ns
ns
ns
NOTE:For propagation delays with loads other than 50 pF , and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
C
PD
Power Dissipation Capacitance (Per Enabled Output)*
*Used to determine the no–load dynamic power consumption: PD = CPD V
Motorola High–Speed CMOS Data Book (DL129/D).
High–Speed CMOS Logic Data
DL129 — Rev 6
Typical @ 25°C, VCC = 5.0 V
23
2
f + ICC VCC. For load considerations, see Chapter 2 of the
CC
pF
3 MOTOROLA