MOTOROLA CMOS LOGIC DATA
1
MC14519B
# # ! !
$ # # !
! $ &$"% ' #
The MC14519B is constructed with MOS P–channel and N–channel
enhancement mode devices in a monolithic structure. These complementary
MOS logic gates find primary use where low power dissipation and/or high
noise immunity is desired.
This device provides three functions in one package; a 4–Bit AND/OR
Selector, a Quad 2–Channel Data Selector, or a Quad Exclusive NOR Gate.
• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
• Plug–in Replacement for CD4019 in Most Applications
LOGIC DIAGRAM
CONTROL
INPUTS
DATA
INPUTS
A
B
X0
Y0
X1
Y1
X2
Y2
X3
Y3
9
14
6
7
4
5
2
3
15
1
10 Z0
11 Z1
12 Z2
13 Z3
VDD = PIN 16
VSS = PIN 8
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
REV 3
1/94
L SUFFIX
CERAMIC
CASE 620
ORDERING INFORMATION
TA = – 55° to 125°C for all packages.
P SUFFIX
PLASTIC
CASE 648
D SUFFIX
SOIC
CASE 751B
MC14XXXBCP Plastic
MC14XXXBCL Ceramic
MC14XXXBD SOIC
TRUTH TABLE
Control Inputs
Output
A B Z
n
0 0 0
0 1 Y
n
1 0 X
n
1 1 xn ĥ Y
n
NOTE: Xn ĥ Yn means X
n
(Exclusive–NOR) Y
n
MOTOROLA CMOS LOGIC DATAMC14519B
2
MAXIMUM RATINGS* (Voltages Referenced to V
SS
)
Symbol
Parameter Value Unit
V
DD
DC Supply Voltage – 0.5 to + 18.0 V
Vin, V
out
Input or Output Voltage (DC or Transient) – 0.5 to VDD + 0.5 V
Iin, I
out
Input or Output Current (DC or Transient),
per Pin
± 10 mA
P
D
Power Dissipation, per Package† 500 mW
T
stg
Storage Temperature – 65 to + 150
_
C
T
L
Lead Temperature (8–Second Soldering) 260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
†Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
Min Max Min Typ # Max Min Max
V
OL
5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
0.05
0.05
0.05
Vdc
“1” Level
Vin = 0 or V
DD
V
OH
5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.95
9.95
14.95
—
—
—
Vdc
“0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
V
IL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
1.5
3.0
4.0
Vdc
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
V
IH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3.5
7.0
11
—
—
—
Vdc
I
OH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1.7
– 0.36
– 0.9
– 2.4
—
—
—
—
mAdc
I
OL
5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.36
0.9
2.4
—
—
—
mAdc
Input Current I
in
15 — ± 0.1 — ±0.00001 ± 0.1 — ± 1.0 µAdc
Input Capacitance
(Vin = 0)
C
in
— — — — 5.0 7.5 — — pF
Quiescent Current
(Per Package)
I
DD
5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
150
300
600
µAdc
Total Supply Current**†
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
I
T
5.0
10
15
IT = (1.2 µA/kHz) f + I
DD
IT = (2.4 µA/kHz) f + I
DD
IT = (3.6 µA/kHz) f + I
DD
µAdc
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
**The formulas given are for the typical characteristics only at 25_C.
†To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.004.
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Z2
Z3
B
X3
V
DD
A
Z0
Z1
X1
Y2
X2
Y3
V
SS
Y0
X0
Y1
Output Voltage
Input Voltage
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)