MOTOROLA CMOS LOGIC DATA
31
MC14007UB
The MC14007UB multi–purpose device consists of three N–channel and
three P–channel enhancement mode devices packaged to provide access to
each device. These versatile parts are useful in inverter circuits, pulse–
shapers, linear amplifiers, high input impedance amplifiers, threshold
detectors, transmission gating, and functional gating.
• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
• Pin–for–Pin Replacement for CD4007A or CD4007UB
• This device has 2 outputs without ESD Protection. Anti–static
precautions must be taken.
MAXIMUM RATINGS* (Voltages Referenced to V
SS
)
Input or Output Voltage (DC or Transient)
Input or Output Current (DC or Transient),
per Pin
Power Dissipation, per Package†
Lead Temperature (8–Second Soldering)
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
†Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
Figure 1. Typical Application: 2–Input Analog Multiplexer
A
B
C
INPUT
INPUT
A
B
C
12
1
3
5
9
2
4
11
10
14
V
DD
6
7 V
SS
8
13
INPUT
1
0
OUTPUT CONDITION
A = C, B = OPEN
A = B, C = OPEN
Substrates of P–channel devices internally
connected to VDD; substrates of N–channel
devices internally connected to VSS.
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
REV 3
1/94
L SUFFIX
CERAMIC
CASE 632
ORDERING INFORMATION
MC14XXXUBCP Plastic
MC14XXXUBCL Ceramic
MC14XXXUBD SOIC
TA = – 55° to 125°C for all packages.
P SUFFIX
PLASTIC
CASE 646
D SUFFIX
SOIC
CASE 751A
11
12
13
14
8
9
105
4
3
2
1
7
6
GATE
C
S–P
C
OUT
C
D–P
A
V
DD
D–N
A
S–N
C
S–N
B
GATE
B
S–P
B
D–P
B
V
SS
GATE
A
D–N
B
PIN ASSIGNMENT
D = DRAIN
S = SOURCE
SCHEMATIC
14 13 2 1 11
126
7 8 3 4 5 10 9
VDD = PIN 14
VSS = PIN 7
MOTOROLA CMOS LOGIC DATAMC14007UB
32
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
“0” Level
(VO = 4.5 Vdc)
(VO = 9.0 Vdc)
(VO = 13.5 Vdc)
“1” Level
(VO = 1.0 Vdc)
(VO = 1.5 Vdc)
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
Input Capacitance
(Vin = 0)
Quiescent Current
(Per Package)
Total Supply Current**†
(Dynamic plus Quiescent,
Per Gate) (CL = 50 pF)
IT = (0.7 µA/kHz) f + IDD/6
IT = (1.4 µA/kHz) f + IDD/6
IT = (2.2 µA/kHz) f + IDD/6
µAdc
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
**The formulas given are for the typical characteristics only at 25_C.
†To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.003.
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However,
precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance
circuit. For proper operation, Vin and V
out
should be constrained to the range VSS ≤ (Vin or V
out
) ≤ VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must
be left open.