MOTOROLA MC100EPT25D, MC100EPT25DT, MC100EPT25DTR2 Datasheet

MC100EPT25
Differential LVECL/ECL to LVTTL Translator
The MC100EPT25 is a Differential LVECL/ECL to LVTTL translator. This device requires +3.3V, –3.3V to –5.2V, and ground. The small outline 8–lead SOIC package and the single gate of the EPT25 make it ideal for applications which require the translation of a clock or data signal.
The VBB output allows the EPT25 to also be used in a single–ended input mode. In this mode the VBB output is tied to the D input for a non–inverting buffer or the D VBB pin should be bypassed to ground via a 0.01mF capacitator.
1.1ns Typical Propagation Delay
275MHz Fmax (Clock bit stream, not pseudo–random)
Differential LVECL/ECL inputs
Small Outline SOIC Package
24mA TTL outputs
Flow Through Pinouts
Internal Input Resistors: Pulldown on D, Pulldown and Pullup on D
Q Output will default LOW with inputs open or at GND
ESD Protection: >4000V HBM, >200V MM
V
BB
Output
New Differential Input Common Mode Range
Moisture Sensitivity Level 1, Indefinite T ime Out of Drypack.
For Additional Information, See Application Note AND8003/D
Flammability Rating: UL–94 code V–0 @ 1/8”,
Oxygen Index 28 to 34
T ransistor Count = 111 devices
1
V
EE
2
D
input for an inverting buffer . If used, the
V
CC
LVTTL
78Q
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MARKING
DIAGRAMS*
8
SO–8
8
1
8
1
*For additional information, see Application Note AND8002/D
PIN
Q D, D V
CC V
BB
GND Ground
V
EE
D SUFFIX
CASE 751
TSSOP–8
DT SUFFIX
CASE 948R
A = Assembly Location L = Wafer Lot Y = Year W = Work Week
PIN DESCRIPTION
FUNCTION
LVTTL Output
Differential LVECL Input Pair
Positive Supply
Output Reference Voltage
Negative Supply
HPT25
ALYW 1 8
HR25
ALYW 1
3
LVECL
VBB
Figure 1. 8–Lead Pinout (Top View) and Logic Diagram
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 1
45
6
NCD
GND
1 Publication Order Number:
MC100EPT25D SO–8 98 Units / Rail MC100EPT25DR2 SO–8 2500 / Reel
MC100EPT25DT TSSOP–8 98 Units / Rail MC100EPT25DTR2 TSSOP–8 2500 / Reel
ORDERING INFORMATION
Device Package Shipping
MC100EPT25/D
MC100EPT25
MAXIMUM RATINGS*
Symbol Parameter Value Unit
V
CC
V
EE
V
I
I
out
I
BB
T
A
T
stg
θ
JA
θ
JC
T
sol
* Maximum Ratings are those values beyond which damage to the device may occur.
{
Use for inputs of same package only.
DC CHARACTERISTICS, ECL/LVECL (VCC = +3.3V; VEE = –5.5V to –3.0V, GND = 0V)
Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit
IEE
V
IH
V
IL
V
BB
V
IHCMR
I
IH
I
IL
NOTE: 100EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
1. (VCC = +3.3V, GND = 0V, VEE = –3.3V), all other pins floating.
2. All loading with 500 ohms to GND, CL = 20pF.
3. V
4. Input and output parameters vary 1:1 with VCC.
Power Supply Current (Note 1.)
Input HIGH Voltage Single Ended (Note 4.)
Input LOW Voltage Single Ended (Note 4.)
Output Voltage Reference –1550 –1450 –1350 –1550 –1450 –1350 –1550 –1450 –1350 mV Input HIGH Voltage Common Mode
Range (Note 3.) Input HIGH Current 150 150 150 µA Input LOW Current D
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
min varies 1:1 with VEE, max varies 1:1 with VCC.
IHCMR
Power Supply (Referenced to GND, VEE = –3.3V) 0 to 3.8 VDC Power Supply (Referenced to GND, VCC = +3.3V) –6.0 to 0 VDC Input Voltage (VI not more positive than GND) 0 to 3.8 VDC Output Current Continuous
VBB Sink/Source Current Operating Temperature Range –40 to +85 °C Storage Temperature –65 to +150 °C Thermal Resistance (Junction–to–Ambient) Still Air
Thermal Resistance (Junction–to–Case) 41 to 44 ± 5% °C/W Solder Temperature (<2 to 3 Seconds: 245°C desired) 265 °C
{
–40°C 25°C 85°C
8.0 16 25 8.0 16 25 8.0 16 25 mA
–1165 –880 –1165 –880 –1165 –880 mV
–1810 –1625 –1810 –1625 –1810 –1625 mV
VEE+2.0 0.0 VEE+2.0 0.0 VEE+2.0 0.0 V
D
0.5
–150
Surge
500lfpm
0.5
–150
50
100
± 0.5 mA
190 130
0.5
–150
mA
°C/W
µA
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MC100EPT25
TTL OUTPUT DC CHARACTERISTICS (VCC = 3.3V ± 0.3V; GND = 0V; VEE = –3.3V ± 0.3V; TA = –40°C to 85°C)
Symbol Characteristic Min Typ Max Unit
I
CCH
I
CCL
V
OH
V
OL
I
OS
NOTE: 100EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
5. All loading with 500 ohms to GND, CL = 20pF.
AC CHARACTERISTICS (VCC = 3.3V ± 0.3V; GND = 0V)
Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit
f
max
t
PLH
t
PHL
t
SK+ +
t
SK– –
t
SKPP
t
JITTER
V
PP
t
r
t
f
6. Skews are measured between outputs under identical conditions.
7. 200mV input guarantees full logic swing at the output.
Power Supply Current (Outputs set to HIGH) 6.0 10 14 mA Power Supply Current (Outputs set to LOW) 7.0 12 17 mA Output HIGH Voltage (IOH = –3.0mA) (Note 5.) 2.2 V Output LOW Voltage (IOL = 24mA) (Note 5.) 0.5 V Output Short Circuit Current –130 –60 mA
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
–40°C 25°C 85°C
Maximum Toggle Frequency 275 275 275 MHz
,
Propagation Delay to Output Differential
Output–to–Output Skew++ Output–to–Output Skew– – Part–to–Pa rt Skew (Note 6.)
Cycle–to–Cycle Jitter TBD TBD TBD ps Input Voltage Swing
(Differential) (Note 7.) Output Rise/Fall Times Q, Q
(0.8V – 2.0V)
800 1200 1800 800 1100 1600 800 1100 1600 ns
60 25
500
100 800 1200 100 800 1200 100 800 1200 mV
450 900
600
1160
750
1400
450 900
60 25
500
600
1100
750
1400
450 900
60 25
500
600
1100
750
1400
ps
ps
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