Motorola MBRM120LT3 Datasheet
SEMICONDUCTOR TECHNICAL DATA
POWERMITE Power Surface Mount Package
The Schottky Powermite employs the Schottky Barrier principle with a barrier metal
and epitaxial construction that produces optimal forward voltage drop–reverse current
tradeoff. The advanced packaging techniques provide for a highly efficient micro
miniature, space saving surface mount Rectifier. With its unique heatsink design, the
Powermite has the same thermal performance as the SMA while being 50% smaller in
footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry.
Because of its small size, it is ideal for use in portable and battery powered products such
as cellular and cordless phones, chargers, notebook computers, printers, PDAs and
PCMCIA cards. Typical applications are ac/dc and dc–dc converters, reverse battery
protection, and “Oring” of multiple supply voltages and any other application where
performance and size are critical.
Features:
• Low Profile — Maximum Height of 1.1 mm
• Small Footprint — Footprint Area of 8.45 mm2
• Low VF Provides Higher Efficiency and Extends Battery Life
• Supplied in 12 mm Tape and Reel — 12,000 Units per Reel
• Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink
Mechanical Characteristics:
• Powermite is JEDEC Registered as D0–216AA
• Case: Molded Epoxy
• Epoxy Meets UL94, VO at 1/8″
• Weight: 62 mg (approximately)
• Device Marking: BCD
• Lead and Mounting Surface Temperature for Soldering Purposes. 260°C Maximum for 10 Seconds
SCHOTTKY BARRIER
CATHODE
Order this document
by MBRM120LT3/D
RECTIFIER
1.0 AMPERES
20 VOLTS
ANODE
CASE 457–03
ISSUE B
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (At Rated VR, TC = 135°C) I
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 135°C)
Non–Repetitive Peak Surge Current
(Non–Repetitive peak surge current, halfwave, single phase, 60 Hz)
Storage / Operating Case Temperature T
Operating Junction Temperature T
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000
V
RRM
V
RWM
I
FRM
I
FSM
stg
V
R
O
, T
J
C
–55 to 150 °C
–55 to 125 °C
THERMAL CHARACTERISTICS
Thermal Resistance – Junction–to–Lead (Anode) (1)
Thermal Resistance – Junction–to–Tab (Cathode) (1)
Thermal Resistance – Junction–to–Ambient (1)
(1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
POWERMITE is a registered trademark of MicroSemi Corporation
(Replaces MBRM5817T3/D)
R
R
tjtab
R
tjl
tja
20 V
1.0 A
2.0 A
50 A
V/ms
35
15
248
°C/W
Rectifier Device Data
Motorola, Inc. 1997
1
MBRM120LT3
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1), See Figure 2
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 3.0 A)
Maximum Instantaneous Reverse Current, See Figure 4
(VR = 20 V)
(VR = 10 V)
(1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%.
V
F
I
R
TJ = 25°C TJ = 85°C
0.34
0.45
0.65
TJ = 25°C TJ = 85°C
0.40
0.10
0.26
0.415
0.67
25
18
V
mA
10
1.0
0.1
, INSTANTANEOUS FORWARD CURRENT (AMPS)I
F
I
100E–3
10E–3
1.0E–3
100E–6
, REVERSE CURRENT (AMPS)
10E–6
R
1.0E–6
TJ = 150°C
TJ = 85°C
TJ = 25°C
TJ = –40°C
0.1
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. T ypical Forward Voltage Figure 2. Maximum Forward V oltage
TJ = 150°C
TJ = 85°C
TJ = 25°C
5.0 10 15
VR, REVERSE VOLTAGE (VOLTS)
0.70.3 0.5 0.9
200
100
, MAXIMUM REVERSE CURRENT (AMPS)
I
10
1.0
0.1
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
I
100E+0
10E+0
1.0E+0
100E–3
10E–3
1.0E–3
100E–6
R
10E–6
TJ = 150°C
TJ = 85°C
TJ = 25°C
0.1
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
TJ = 150°C
TJ = 85°C
TJ = 25°C
5.0 10 15
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
0.70.3 0.5 0.9
200
Figure 3. T ypical Reverse Current Figure 4. Maximum Reverse Current
2
Rectifier Device Data
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