Motorola MBRF20100CT Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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by MBRF20100CT/D

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The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in
a large area metal–to–silicon power diode. State–of–the–art geometry features
epitaxial construction with oxide passivation and metal overlay contact. Ideally
suited for use as rectifiers in very low–voltage, high–frequency switching power
supplies, free wheeling diodes and polarity protection diodes.

• Highly Stable Oxide Passivated Junction

• Very Low Forward Voltage Drop

• Matched Dual Die Construction

• High Junction Temperature Capability

• High dv/dt Capability

• Excellent Ability to Withstand Reverse Avalanche Energy

Transients

• Guardring for Stress Protection

• Epoxy Meets UL94, VO at 1/8″

• Electrically Isolated. No Isolation Hardware Required.

• UL Recognized File #E69369

(1)

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight: 1.9 grams (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead Temperature for Soldering Purposes: 260°C Max. for 10

Seconds

• Shipped 50 units per plastic tube

• Marking: B20100

2

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Motorola Preferred Device

SCHOTTKY BARRIER

RECTIFIER

20 AMPERES

100 VOL TS

1

3

1

2

3

CASE 221D–02

ISOLATED TO–220

MAXIMUM RATINGS, PER LEG

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage
DC Blocking Voltage

Average Rectified Forward Current

(Rated VR), TC = 133°C Total Device

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz), TC = 133°C

Non–repetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) I
Operating Junction and Storage Temperature TJ, T

Voltage Rate of Change (Rated VR) dv/dt 10000 V/µs
RMS Isolation Voltage (t = 1.0 second, R.H. ≤ 30%, TA = 25°C)

(2)

Per Figure 3
Per Figure 4
Per Figure 5

(1)

V

RRM

V

RWM

V

I

F(AV)

I

FRM

I

FSM

RRM

V

iso1

V

iso2

V

iso3

100 Volts

R

10
20

20 Amps

150 Amps

0.5 Amp

stg

– 65 to +150 °C

4500
3500
1500

THERMAL CHARACTERISTICS, PER LEG

Maximum Thermal Resistance — Junction to Case R
Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds T

(1) UL Recognized mounting method is per Figure 4.
(2) Proper strike and creepage distance must be provided.

SWITCHMODE is a trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

θJC

L

3.5 °C/W

260 °C

Amps

Volts

Rev 1

Rectifier Device Data

 Motorola, Inc. 1996

1

MBRF20100CT

ELECTRICAL CHARACTERISTICS, PER LEG

Characteristic Symbol Max Unit

Maximum Instantaneous Forward Voltage (3)

(iF = 10 Amp, TC = 25°C)

(iF = 10 Amp, TC = 125°C)

(iF = 20 Amp, TC = 25°C)

(iF = 20 Amp, TC = 125°C)
Maximum Instantaneous Reverse Current (3)

(Rated DC Voltage, TC = 25°C)

(Rated DC Voltage, TC = 125°C)

(3) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%

0.85

v

F

i

R

0.75

0.95

0.85

0.15
150

Volts

mA

50

20

10

5.0

3.0

1.0

0.5

, INSTANTANEOUS FORWARD CURRENT (AMPS)

F

i

0

150°C

100°C

TJ = 25°C

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
vF, INSTANTANEOUS VOLTAGE (VOLTS)

Figure 1. T ypical Forward Voltage Per Diode

10

1.0

0.1

, REVERSE CURRENT (mA)

R

I

0.01

TJ = 150°C

TJ = 125°C
TJ = 100°C

TJ = 25°C

120100806040200

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. T ypical Reverse Current Per Diode

2

Rectifier Device Data