MAC7100 Microcontroller
Family Hardware
Specifications
Freescale Semiconductor, Inc.
32-bit Embedded
Controller Division
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This document provides electrical specifications, pin assignments, and package diagrams for
MAC7100 family of microcontroller devices. For functional characteristics of the family,
refer to the MAC7100 Microcontroller Family Reference Manual (MAC7100RM/D).
This document contains the following topics:
TopicPage
Section 1, “Overview”1
Section 2, “Ordering Information”2
Section 3, “Electrical Characteristics”3
Section 4, “Device Pin Assignments”36
Section 5, “Mechanical Information”41
1Overview
The MAC7100 Family of microcontrollers (MCUs) are members of a pin-compatible family
of 32-bit Flash-memory-based devices developed specifically for embedded automotive
applications. The pin-compatible family concept enables users to select between different
memory and peripheral options for scalable designs. All MAC7100 Family members are
composed of a 32-bit central processing unit (ARM7TDMI-S), up to 512Kbytes of embedded
Flash EEPROM for program storage, up to 32Kbytes of embedded Flash for data and/or
program storage, and up to 32Kbytes of RAM. The family is implemented with an enhanced
DMA (eDMA) controller to improve performance for transfers between memory and many of
the on-chip peripherals. The peripheral set includes asynchronous serial communications
interfaces (eSCI), serial peripheral interfaces (DSPI), inter-integrated circuit (I
controllers, FlexCAN interfaces, an enhanced modular I/O subsystem (eMIOS), 10-bit
analog-to-digital converter (ATD) channels, general-purpose timers (PIT) and two
special-purpose timers (RTI and SWT). The peripherals share a large number of general
purpose input-output (GPIO) pins, all of which are bidirectional and available with interrupt
capability to trigger wake-up from low-power chip modes.
2
C) bus
The inclusion of a PLL circuit allows power consumption and performance to be adjusted to
suit operational requirements. The operating frequency of devices in the family is up to a
maximum of 50 MHz. The internal data paths between the CPU core, eDMA, memory and
peripherals are all 32 bits wide, further improving performance for 32-bit applications. The
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Ordering Information
Freescale Semiconductor, Inc.
MAC7111 and MAC7131 also offer a 16-bit wide external data bus with 22 address lines. The family of
devices is capable of operating over a junction temperature range of -40° C to 150° C.
Table 1 provides a comparison of members of the MAC7100 Family and the availability of peripheral
modules on the various devices.
Table 1. MAC7100 Family Device Derivatives
Module OptionsMAC7101MAC7111MAC7121MAC7131MAC7141
Program Flash512Kbytes512Kbytes512Kbytes512Kbytes512Kbytes
Data Flash32Kbytes32Kbytes32Kbytes32Kbytes32Kbytes
C = –40° C to 85° C
V = –40° C to 105° C
M = –40° C to 125° C
Package Option
FU = 100 QFP
PV = 112 / 144 LQFP
VF = 208 MAP BGA
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Electrical Characteristics
3Electrical Characteristics
This section contains electrical information for MAC7100 Family microcontrollers. The information is
preliminary and subject to change without notice.
MAC7100 Family devices are specified and tested over the 5 V and 3.3 V ranges. For operation at any
voltage within that range, the 3.3 V specifications generally apply. However, no production testing is done
to verify operation at intermediate supply voltage levels.
3.1Parameter Classification
The electrical parameters shown in this appendix are derived by various methods. To provide a better
understanding to the designer, the following classification is used. Parameters are tagged accordingly in in
the column labeled “C” of the parametric tables, as appropriate.
Table 2. Parametric Value Classification
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PParameters guaranteed during production testing on each individual device.
CParameters derived by the design characterization and by measuring a statistically relevant
sample size across process variations.
TParameters derived by design characterization on a small sample size from typical devices
under typical conditions (unless otherwise noted). All values shown in the typical column
are within this classification, even if not so tagged.
DParameters derived mainly from simulations.
3.2Absolute Maximum Ratings
Absolute maximum ratings are stress ratings only. Functional operation outside these maximums is not
guaranteed. Stress beyond these limits may affect reliability or cause permanent damage to the device.
MAC7100 Family devices contain circuitry protecting against damage due to high static voltage or
electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages
higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if
unused inputs are tied to an appropriate logic voltage level (for example, either V
Table 3. Absolute Maximum Ratings
NumRatingSymbolMinMaxUnit
A1I/O, Regulator and Analog Supply VoltageVDD5–0.3 +6.0V
A2Digital Logic Supply Voltage
A3PLL Supply Voltage
A4ATD Supply VoltageV
A5Analog ReferenceV
A6Voltage difference V
A7Voltage difference V
A8Voltage difference VRH – V
A9Voltage difference V
A10Digital I/O Input Voltage V
1
DD
SS
DD
1
VDDPLL–0.3+3.0V
X to VDDA∆
X to VSSA∆
VRH – V
VDDA – V
A – V
RL
RH
VDD2.5–0.3+3.0V
A–0.3 +6.5V
DD
RH, VRL
VDDX
VSSX
RL
RH
IN
5 or VDD5).
SS
–0.3+6.0V
–0.3+0.3V
–0.3+0.3V
–0.3+6.5V
–6.5+6.5V
–0.3+6.0V
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Electrical Characteristics
Table 3. Absolute Maximum Ratings (continued)
NumRatingSymbolMinMaxUnit
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A11XFC, EXTAL, XTAL inputsV
A12TEST inputV
Instantaneous Maximum Current
A13Single pin limit for XFC, EXTAL, XTAL
A14Single pin limit for all digital I/O pins
A15Single pin limit for all analog input pins
A16Single pin limit for TEST
A17Storage Temperature RangeT
1
The device contains an internal voltage regulator to generate the logic and PLL supply from the I/O supply. The
absolute maximum ratings apply when the device is powered from an external source.
2
Input must be current limited to the value specified. To determine the value of the required current-limiting resistor,
calculate resistance values using V
calculated values.
3
These pins are internally clamped to VSSPLL and VDDPLL.
4
All I/O pins are internally clamped to VSSX and VDDX, VSSR and VDDR or VSSA and VDDA.
5
This pin is clamped low to VSSX, but not clamped high, and must be tied low in applications.
2
5
POSCLAMP
3
4
4
= VDDA + 0.3 V and V
ILV
TEST
I
DL
I
D
I
DA
I
DT
stg
NEGCLAMP
–0.3+3.0V
–0.3+10.0V
–25+25mA
–25+25mA
–25+25mA
–0.250mA
–65+155°C
= –0.3 V, then use the larger of the
3.3ESD Protection and Latch-up Immunity
All ESD testing is in conformity with CDF-AEC-Q100 Stress test qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM), the Machine Model (MM) and the Charge Device Model.
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise.
Table 4. ESD and Latch-up Test Conditions
ModelDescriptionSymbolValueUnit
Human BodySeries ResistanceR11500Ohm
Storage CapacitanceC100pF
Number of Pulses per pin
positive
negative
MachineSeries ResistanceR10Ohm
Storage CapacitanceC200pF
Number of Pulse per pin
positive
negative
Latch-upMinimum input voltage limit–2.5V
Maximum input voltage limit7.5V
——
3
3
——
3
3
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Table 5. ESD and Latch-Up Protection Characteristics
Num CRatingSymbolMinMaxUnit
Electrical Characteristics
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B1C Human Body Model (HBM)V
B2C Machine Model (MM)V
B3C Charge Device Model (CDM)V
B4C Latch-up Current at T
positive
negative
B5C Latch-up Current at T
positive
negative
= 125°C
A
= 27°C
A
HBM
MM
CDM
I
LAT
I
LAT
2000—V
200—V
500—V
mA
+100
–100
+200
–200
—
—mA
3.4Operating Conditions
Unless otherwise noted, the following conditions apply to all parametric data. Refer to the temperature
rating of the device (C, V, M) with respect to ambient temperature (T
power dissipation calculations refer to Section 3.5, “Power Dissipation and Thermal Characteristics.”
Table 6. MAC7100 Family Device Operating Conditions
NumRatingSymbolMinTypMaxUnit
C1I/O, Regulator and Analog Supply VoltageVDD54.555.5V
C2Digital Logic Supply Voltage
C3PLL Supply Voltage
C4Voltage Difference VDDX to VDDA∆
C5Voltage Difference VSSX to VSSA∆
C6Oscillator Frequencyf
C7Bus Frequencyf
C8aMAC7100C Operating Junction Temperature Range
C8bOperating Ambient Temperature Range
C9aMAC7100V Operating Junction Temperature Range
C9bOperating Ambient Temperature Range
C10a MAC7100M Operating Junction Temperature Range
C10bOperating Ambient Temperature Range
1
The device contains an internal voltage regulator to generate the logic and PLL supply from the I/O supply. The
absolute maximum ratings apply when this regulator is disabled and the device is powered from an external source.
2
Please refer to Section 3.5, “Power Dissipation and Thermal Characteristics,” for more details about the relation
between ambient temperature TA and device junction temperature TJ.
1
1
V
2.52.352.52.75V
DD
VDDPLL2.352.52.75V
X–0.100.1V
VDD
X–0.100.1V
VSS
osc
bus
T
J
2
2
T
A
T
J
2
2
T
A
T
J
2
2
T
A
) and junction temperature (TJ). For
A
0.5—16MHz
0.5—50MHz
–40—110°C
–402585°C
–40—130°C
–4025105°C
–40—150°C
–4025125°C
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Electrical Characteristics
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3.4.15 V I/O Pins
The I/O pins operate at a nominal level of 5 V. This class of pins is comprised of the clocks, control and general
purpose/peripheral pins. The internal structure of these pins is identical; however, some functionality may be
disabled (for example, for analog inputs the output drivers, pull-up/down resistors are permanently disabled).
3.4.2Oscillator Pins
The pins XFC, EXTAL, XTAL are dedicated to the oscillator and operate at a nominal level of 2.5 V.
3.5Power Dissipation and Thermal Characteristics
Power dissipation and thermal characteristics are closely related. The user must assure that the maximum
operating junction temperature is not exceeded.
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Note that the JEDEC specification reserves the symbol R
ambient thermal resistance on a 1s test board in natural convection environment. R
or θJA (Theta-JA) strictly for junction-to-
θJA
θJMA
or θ
JMA
(Theta-JMA) will be used for both junction-to-ambient on a 2s2p test board in natural convection and for
junction-to-ambient with forced convection on both 1s and 2s2p test boards. It is anticipated that the generic
name, θ
The average chip-junction temperature (T
, will continue to be commonly used.
JA
TJTAΘJA()+=
Junction Temperature (°C)=
T
J
T
Ambient Temperature (°C)=
A
Total Chip Power Dissipation (W)=
P
D
Package Thermal Resistance (°C/W)=
Θ
JA
) in °C is obtained from:
J
The total power dissipation is calculated from:
P
+=
INTPIO
P
INT
P
INT
Chip Internal Power Dissipation (W)=
IDDVDD×()IDDPLL VDDPLL×()IDDAVDDA×()++=
Two cases for P
P
D
, with the internal voltage regulator enabled and disabled, must be considered:
IO
1. Internal Voltage Regulator disabled:
∑
R
DSON
i
V
OL
----------
(for outputs driven low)=
I
OL
P
IO
P
is the sum of all output currents on I/O ports associated with VDDX and VDDR.
IO
R
DSON
I
()
⋅=
IO
i
2
or
VDD5V
–
R
DSON
-------------------------------
OH
I
(for outputs driven high)=
OL
2. Internal voltage regulator enabled:
P
I
R is the current shown in Table 12 and not the overall current flowing into VDDR, which
DD
INT
IDDRVDDR×()IDDAVDDA×()+=
additionally contains the current flowing into the external loads with output high.
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Electrical Characteristics
3.5.1Power Dissipation Simulation Details
Table 7. Thermal Resistance for 100 lead 14x14 mm LQFP, 0.5 mm Pitch
RatingValueUnitComments
Junction to Ambient (Natural Convection)Single layer board (1s)R
Junction to Ambient (Natural Convection)Four layer board (2s2p)R
Junction to Ambient (@ 200 ft./min.)Single layer board (1s)R
Junction to Ambient (@ 200 ft./min.)Four layer board (2s2p)R
Junction to BoardR
Junction to CaseR
Junction to Package TopNatural ConvectionΨ
1
100 LQFP, Case Outline: 983–02
Table 8. Thermal Resistance for 112 lead 20x20 mm LQFP, 0.65 mm Pitch
RatingValueUnitComments
Junction to Ambient (Natural Convection)Single layer board (1s)R
Junction to Ambient (Natural Convection)Four layer board (2s2p)R
Junction to Ambient (@ 200 ft./min.)Single layer board (1s)R
Junction to Ambient (@ 200 ft./min.)Four layer board (2s2p)R
Junction to BoardR
Junction to CaseR
Junction to Package TopNatural ConvectionΨ
1
112 LQFP, Case Outline: 987–01
Table 9. Thermal Resistance for 144 lead 20x20 mm LQFP, 0.5 mm Pitch
RatingValueUnitComments
Junction to Ambient (Natural Convection)Single layer board (1s)R
Junction to Ambient (Natural Convection)Four layer board (2s2p)R
Junction to Ambient (@ 200 ft./min.)Single layer board (1s)R
Junction to Ambient (@ 200 ft./min.)Four layer board (2s2p)R
Junction to BoardR
Junction to CaseR
Junction to Package TopNatural ConvectionΨ
1
144 LQFP, Case Outline: 918–03
Table 10. Thermal Resistance for 208 lead 17x17 mm MAP, 1.0 mm Pitch
RatingValueUnitComments
Junction to Ambient (Natural Convection)Single layer board (1s)R
Junction to Ambient (Natural Convection)Four layer board (2s2p)R
Junction to Ambient (@ 200 ft./min.)Single layer board (1s)R
Junction to Ambient (@ 200 ft./min.)Four layer board (2s2p)R
Junction to BoardR
Junction to CaseR
Junction to Package TopNatural ConvectionΨ
1
208 MAP BGA, Case Outline: 1159A-01
Comments:
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance.
2. Per SEMI G38-87 and JEDEC JESD51-2 with the single layer board (JESD51-3) horizontal.
3. Per JEDEC JESD51-6 with the board (JESD51-7) horizontal.
4. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on the top
surface of the board at the center lead. For fused lead packages, the adjacent lead is used.
5. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1).
6. Thermal characterization parameter indicating the temperature difference between package top and junction temperature per JEDEC
JESD51-2. When Greek letters are not available, the thermal characterization parameter is written as Psi-JT.
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Electrical Characteristics
Table 11. Power Dissipation 1/8 Simulation Model Packaging Parameters
Freescale Semiconductor, Inc.
ComponentConductivity
Mold Compound 0.9 W/m K
Leadframe (Copper) 263 W/m K
Die Attach 1.7 W/m K
3.6Power Supply
The MAC7100 Family utilizes several pins to supply power to the oscillator, PLL, digital core, I/O ports
and ATD. In the context of this section, V
V
R or VSSX unless otherwise noted. IDD5 denotes the sum of the currents flowing into the VDDA, VDDX,
SS
and V
sum of the currents flowing into V
R. VDD is used for VDD2.5, and VDDPLL, VSS is used for VSS2.5 and VSSPLL. IDD is used for the
DD
2.5 and VDDPLL.
DD
5 is used for VDDA, VDDR or VDDX; VSS5 is used for VSSA,
DD
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3.6.1Current Injection
The power supply must maintain regulation within the VDD5 or VDD2.5 operating range during
instantaneous and operating maximum current conditions. If positive injection current (V
greater than I
going out of regulation. It is important to ensure that the external V
the maximum injection current. The greatest risk will be when the MCU is consuming very little power (for
example, if no system clock is present, or if the clock rate is very low).
5, the injection current may flow out of VDD5 and could result in the external power supply
DD
5 load will shunt current greater than
DD
> VDD5) is
in
3.6.2Power Supply Pins
The VDDR – VSSR pair supplies the internal voltage regulator. The VDDA – VSSA pair supplies the A/D
converter and the reference circuit of the internal voltage regulator. The V
pins. V
All V
V
SS
are connected by anti-parallel diodes for ESD protection.
PLL – VSSPLL pair supplies the oscillator and PLL.
DD
X pins are internally connected by metal. All VSSX pins are internally connected by metal. All
DD
2.5 pins are internally connected by metal. VDDA, VDDX and VDDR as well as VSSA, VSSX and VSSR
X – VSSX pair supplies the I/O
DD
3.6.3Supply Currents
All current measurements are without output loads. Unless otherwise noted the currents are measured in
single chip mode, internal voltage regulator enabled and at 40MHz bus frequency using a 4MHz oscillator
in low power mode. Production testing is performed using a square wave signal at the EXTAL input.
In expanded modes, the currents flowing in the system are highly dependent on the load at the address, data
and control signals as well as on the duty cycle of those signals. No generally applicable numbers can be
given. A good estimate is to take the single chip currents and add the currents due to the external loads.
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Electrical Characteristics
Table 12. Supply Current Characteristics
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Num CRatingSymbolTypMaxUnit
D1aC Run Supply Current
Single Chip
D1bC
D1cC
Core
Regulator
(if enabled)
Pins
–40° C
25° C
85° C
105° C
125° C
–40° C
25° C
85° C
105° C
125° C
–40° C
25° C
85° C
105° C
125° C
2
IDDR
IDDR
IDDR
core
reg
pins
2
2
2
2
2
2
2
2
2
2
2
2
2
2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
D2C Doze Supply CurrentRun ≥ Doze ≥ Pseudo Stop
D3aC Psuedo Stop Current
PLL on
Core
D3bC
Regulator
D3cC
Pins
D4aC Stop Current
= TA assumed
T
J
Core
D4bC
Regulator
D4cC
Pins
1
At the time of publication, this value is yet to be determined, and will be supplied when device characterization is complete.
2
85°C, 105°C, and 125°C refer to the "C", "V", and "M" Temperature Options, respectively.
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Electrical Characteristics
3.6.4Voltage Regulator Characteristics
Table 13. VREG Operating Conditions
NumCCharacteristicSymbolMinTypicalMaxUnit
E1P Input VoltagesV
E2P Regulator Current
Reduced Power Mode
Shutdown Mode
E3P Output Voltage Core
Full Performance Mode
Reduced Power Mode
Shutdown Mode
E4P Output Voltage PLL
Full Performance Mode
Reduced Power Mode
Reduced Power Mode
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E5P Low Voltage Interrupt
E6P Low Voltage Reset
E7P Power On Reset
1
High Impedance Output.
2
Current IDDPLL = 1mA (Low Power Oscillator).
3
Current IDDPLL = 3mA (Standard Oscillator).
4
Monitors VDDA, active only in full performance mode. Indicated I/O and
voltage.
5
Monitors VDD2.5, active only in full performance mode. Only POR is active in reduced performance mode.
6
Monitors VDD2.5, active in all modes.
Shutdown Mode
Assert Level
Deassert Level
Assert Level
6
Assert Level
Deassert Level
2
3
4
5
VDDRA
I
REG
V
V
DD
V
V
V
LVR A
V
PORA
V
PORD
DD
PLL
LVI A
LVI D
cale Semiconductor,
2.97—5.5V
—
—
2.45
1.60
—
2.35
2.00
1.60
—
4.10
4.25
2.252.35—V
0.97
—
ATD
performance degradation due to low supply
TBD
TBD
2.5
2.5
1
—
2.5
2.5
2.5
—
4.37
4.52
—
—
50
40
2.75
2.75
—
2.75
2.75
1
2.75
—
4.66
4.77
—
2.05
µA
µA
V
V
V
V
V
V
V
V
V
V
V
Frees
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Electrical Characteristics
3.6.5Chip Power Up and Voltage Drops
The VREG sub-modules LVI (low voltage interrupt), POR (power on reset) and LVR (low voltage reset)
handle chip power-up or drops of the supply voltage. Refer to Figure 2.
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tage
V
LVI D
V
LVI A
V
LVR D
V
LVR A
V
PORD
LVI
POR
LVR
Note: Not to scale.
LVI Enabled
Figure 2. VREG Chip Power-up and Voltage Drops
LVI Disabled
due to LVR
VDDA
V
DD
Time
2.5
3.6.6Output Loads
The on-chip voltage regulator is intended to supply the internal logic and oscillator circuits. No external DC
load is allowed. Capacitive loads are specified in Table 14. Capacitors with X7R dielectricum are required.
Table 14. VREG Recommended Load Capacitances
RatingSymbolMinTypMaxUnit
Load Capacitance on each V
Load Capacitance on V
DD
2.5 pinC
DD
PLL pinC
LVD D
LVD Dfc PLL
20044012000nF
902205000nF
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Electrical Characteristics
3.7I/O Characteristics
This section describes the characteristics of all I/O pins in both 3.3 V and 5 V operating conditions. All
parameters are not always applicable; for example, not all pins feature pull up/down resistances.
Table 15. 5 V I/O Characteristics
Conditions shown in Table 6 unless otherwise noted
Num CRatingSymbolMinTypMaxUnit
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F1a P Input High VoltageV
F1b T Input High VoltageV
F2a P Input Low VoltageV
F2b T Input Low VoltageV
F3C Input HysteresisV
F4P
F5P Output High Voltage (pins in output mode)
F6P Output Low Voltage (pins in output mode)
F7P Internal Pull Up Device Current,
F8P Internal Pull Up Device Current,
F9P Internal Pull Down Device Current,
F10 P Internal Pull Down Device Current,
F11 D Input CapacitanceC
F12 T Injection current
F13 P Port Interrupt Input Pulse filtered
F14 P Port Interrupt Input Pulse passed
1
Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half
for each 8°C to 12°C in the temperature range from 50°C to 125°C.
2
Refer to Section 3.6.1, “Current Injection,” for more details
3
Parameter only applies in STOP or Pseudo STOP mode.
Input Leakage Current (pins in high impedance input mode)
= V
V
in
Partial DriveI
Full DriveI
Partial DriveI
Full Drive
tested at V
tested at V
tested at V
tested at V
Single Pin limit
Total Device Limit. Sum of all injected currents
5 or VSS5
DD
OH
I
OL
IL
IH
IH
IL
= –2mA
OH
= –10mA
= +2mA
OL
= +10mA
Max.
Min.
Min.
Max.
2
3
3
HYS
1
I
V
V
I
PUL
I
PUH
I
PDH
I
PDL
I
ICS
I
ICP
t
PULSE
t
PULSE
IH
IH
IL
IL
in
OH
OL
0.65 ×
VDD5
——V
——0.35 ×
VSS5 –
0.3
—250—mV
TBD—TBDµA
VDD5 –
0.8
——0.8V
——–130 µA
–10——µA
——130µA
10——µA
in
—6—pF
–2.5
–25
—— 3 µs
10——µs
—— V
5+
DD
0.3
VDD5
—— V
—— V
—
2.5
25
V
V
µA
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Freescale Semiconductor, Inc.
Table 16. 3.3 V I/O Characteristics
Conditions shown in Table 6, with VDDX = 3.3 V ±10% and a temperature maximum of +140°C unless otherwise noted.
Num CRatingSymbolMinTypMaxUnit
nc...
I
cale Semiconductor,
Frees
G1a P Input High VoltageV
G1b T Input High VoltageV
G2a P Input Low VoltageV
G2b T Input Low VoltageV
G3C Input HysteresisV
G4P
G5P Output High Voltage (pins in output mode)
G6P Output Low Voltage (pins in output mode)
G7P Internal Pull Up Device Current,
G8P Internal Pull Up Device Current,
G9P Internal Pull Down Device Current,
G10 P Internal Pull Down Device Current,
G11 D Input CapacitanceC
G12 T Injection current
G13 P Port Interrupt Input Pulse filtered
G14 P Port Interrupt Input Pulse passed
1
Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half
for each 8°C to 12°C in the temperature range from 50°C to 125°C.
2
Refer to Section 3.6.1, “Current Injection,” for more details
3
Parameter only applies in STOP or Pseudo STOP mode.
Input Leakage Current (pins in high impedance input mode)
= V
V
in
5 or VSS5
DD
I
Partial Drive
Full DriveI
Partial Drive
Full DriveI
tested at VIL Max.
tested at VIH Min.
tested at VIH Min.
tested at VIL Max.
Single Pin limit
Total Device Limit. Sum of all injected currents
OH
= –4.5mA
OH
I
OL
= +5.5mA
OL
2
= –0.75mA
= +0.9mA
3
3
HYS
1
I
V
V
I
PUL
I
PUH
I
PDH
I
PDL
I
ICS
I
ICP
t
PULSE
t
PULSE
IH
IH
IL
IL
in
OH
OL
0.65 ×
V
DD
——V
——0.35 ×
VSS5 –
0.3
—250—mV
TBD—TBDµA
VDD5 –
0.4
——0.4V
——–60 µA
–6——µA
——60µA
6——µA
in
—6—pF
–2.5
–25
—— 3 µs
10——µs
—— V
5
5 +
DD
0.3
VDD5
—— V
—— V
—
2.5
25
V
V
µA
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Electrical Characteristics
Freescale Semiconductor, Inc.
3.8Clock and Reset Generator Electrical
Characteristics
This section describes the electrical characteristics for the oscillator, phase-locked loop, clock monitor and
reset generator.
3.8.1Oscillator Characteristics
The MAC7100 Family features an internal low power loop controlled Pierce oscillator and a full swing Pierce
oscillator/external clock mode. The selection of loop controlled Pierce oscillator or full swing Pierce
oscillator/external clock depends on the level of the XCLKS
Before asserting the oscillator to the internal system clock distribution subsystem, the quality of the
oscillation is checked for each start from either power on, STOP or oscillator fail. t
maximum time before switching to the internal self clock mode after POR or STOP if a proper oscillation is
not detected. The quality check also determines the minimum oscillator start-up time t
features a clock monitor. A Clock Monitor Failure is asserted if the frequency of the incoming clock signal
nc...
I
is below the Clock Monitor Assert Frequency f
Table 17. Oscillator Characteristics
CMFA
.
signal at the rising edge of the RESET signal.
specifies the
CQOUT
. The device also
UPOSC
cale Semiconductor,
Frees
Num CRatingSymbolMinTypMaxUnit
H1a C Crystal oscillator range (loop controlled Pierce)f
H1b C Crystal oscillator range (full swing Pierce)
H2P Startup CurrentI
H3C Oscillator start-up time (loop controlled Pierce)t
H4D Clock Quality check time-outt
H5P Clock Monitor Failure Assert Frequencyf
H6P External square wave input frequency
H7D External square wave pulse width lowt
H8D External square wave pulse width hight
H9D External square wave rise timet
H10 D External square wave fall timet
H11 D Input Capacitance (EXTAL, XTAL pins)C
H12 C EXTAL pin DC Operating Bias in loop controlled
mode
1
Depending on the crystal; a damping series resistor might be necessary
2
XCLKS negated during reset
3
f
= 4 MHz, C = 22 pF.
osc
4
Maximum value is for extreme cases using high Q, low frequency crystals
1, 2
2
OSC
f
OSC
OSC
UPOSC
CQOUT
CMFA
f
EXT
EXTL
EXTH
EXTR
EXTF
V
DCBIAS
IN
4.0—16MHz
0.5—40MHz
100——µA
—TBD
0.45—2.5s
50100200KHz
0.5—40MHz
9.5——ns
9.5——ns
—— 1ns
—— 1ns
—7—pF
—TBD—V
3
50
4
ms
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Electrical Characteristics
Freescale Semiconductor, Inc.
3.8.2PLL Filter Characteristics
The oscillator provides the reference clock for the PLL. The voltage controlled oscillator (VCO) of the PLL
is also the system clock source in self clock mode. In order to operate reliably, care must be taken to select
proper values for external loop filter components.
VDDPLL
nc...
I
cale Semiconductor,
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f
OSC
1
REFDV+1
C
Phase
Detector
f
REF
Figure 3. Basic PLL Functional Diagram
f
CMP
∆
K
Loop Divider
SYNR+1
S
R
φ
1
C
P
VCO
K
V
1
2
f
VCO
The procedure described below can be used to calculate the resistance and capacitance values using typical
values for K
, f1 and ich from Table 18. First, the VCO Gain at the desired VCO output frequency is
1
approximated by:
f1f
–()
VCO
--------------------------
1V⋅
K
KVK1e
1
⋅=
The phase detector relationship is given by:
K
is the current in tracking mode. The loop bandwidth fC should be chosen to fulfill the Gardner’s stability
i
ch
ich–KV⋅=
Φ
criteria by at least a factor of 10, typical values are 50. ζ = 0.9 ensures a good transient response.
2 ζ f
<
f
-----------------------------------------
C
πζ 1 ζ
⋅⋅
1
ref
------
50
2
++()⋅
f
ref
-------------- ζ0.9=();<→
f
C
450⋅
And finally the frequency relationship is defined as
f
VCO
n
------------2synr 1+()⋅==
f
ref
With the above inputs the resistance can be calculated as:
⋅⋅⋅
The capacitance C
The capacitance C
2 π nf
----------------------------=
R
can now be calculated as:
S
2 ζ2⋅
---------------------
C
S
π f
C
should be chosen in the range of:
P
C
20÷CPCS10÷≤≤
S
R⋅⋅
C
K
Φ
0.516
-------------- ζ0.9=();≈=
R⋅
f
C
The stabilization delays shown in Table 18 are dependant on PLL operational settings and external
component selection (for example, crystal, XFC filter).
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Freescale Semiconductor, Inc.
Electrical Characteristics
3.8.2.1Jitter Information
The basic functionality of the PLL is shown in Figure 3. With each transition of the clock f
from the reference clock f
is measured and input voltage to the VCO is adjusted accordingly. The adjustment
ref
, the deviation
cmp
is done continuously with no abrupt changes in the clock output frequency. Noise, voltage, temperature and
other factors cause slight variations in the control loop resulting in a clock jitter. This jitter affects the real
minimum and maximum clock periods as illustrated in Figure 4. It is important to note that the pre-scaler used
by timers and serial modules will eliminate the effect of PLL jitter to a large extent.
0
t
MIN1
t
NOM
t
MAX1
nc...
I
The relative deviation of t
123N–1N
t
(N)
MIN
t
(N)
MAX
Figure 4. Jitter Definitions
is at its maximum for one clock period, and decreases towards zero for larger
NOM
number of clock periods (N). Thus, jitter is defined as:
t
N()
MAX
JN() max 1
=
---------------------–1
⋅
Nt
NOM
For N < 100, the following equation is a good fit for the maximum jitter:
j
1
JN()
J(N)
--------j
N
cale Semiconductor,
t
N()
MIN
---------------------–,
⋅
Nt
NOM
+=
2
Frees
015102015N
Figure 5. Maximum Bus Clock Jitter Approximation
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nc...
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cale Semiconductor,
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Freescale Semiconductor, Inc.
Electrical Characteristics
3.8.3PLL Characteristics
Table 18. PLL Characteristics
Num CRatingSymbolMinTypMaxUnit
J1PLL reference frequency, crystal oscillator range
J2P Self Clock Mode frequencyf
J3D VCO locking rangef
J4D
J5D Lock Detection|∆
J6D Un-Lock Detection|∆
J7D
J8C PLLON Total Stabilization delay (Auto Mode)
J9D PLLON Acquisition mode stabilization delay
J10 D PLLON Tracking mode stabilization delay
J11 D Charge pump current acquisition mode| i
J12 D Charge pump current tracking mode| i
J13 D Jitter fit VCO loop gain parameterK
J14 D Jitter fit VCO loop frequency parameterf
J15 C Jitter fit parameter 1j
J16 C Jitter fit parameter 2j
1
VDDPLL at 2.5 V.
2
Percentage deviation from target frequency
3
PLL stabilization delay is highly dependent on operational requirement and external component values (for
example, crystal and XFC filter component values). Notes 4 and 5 show component values for a typical
configurations. Appropriate XFC filter values should be chosen based on operational requirement of system.
4
f
5
f
Lock Detector transition from Acquisition to Tracking mode
Lock Detector transition from Tracking to Acquisition mode
The time-out Table 19 shows the delay for the crystal monitor to trigger when the clock stops, either at the high
or at the low level. The corresponding clock period with an ideal 50% duty cycle is twice this time-out value.
Table 19. Crystal Monitor Time-Outs
MinTypMaxUnit
61018.5µs
3.8.5Clock Quality Checker
The timing for the clock quality check is derived from the oscillator and the VCO frequency range in
Table 18. These numbers define the upper time limit for the individual check windows to complete.
Table 20. CRG Maximum Clock Quality Check Timings
Clock Check WindowsValueUnit
Check Window9.1 to 20.0ms
Timeout Window0.46 to 1.0s
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Electrical Characteristics
Freescale Semiconductor, Inc.
3.8.6Startup
Table 21 summarizes several startup characteristics explained in this section. Refer to the MAC7100
Microcontroller Family Reference Manual (MAC7100RM/D) for a detailed description of the startup
3.8.6.1Power On and Low Voltage Reset (POR and LVR)
The release level V
V
releasing the POR or LVR reset, the oscillator and the clock quality check are started. If after a time t
no valid oscillation is detected, the MCU will start using the internal self-generated clock. The fastest startup
time possible is given by t
is derived from the VDD2.5 supply. They are also valid if the device is powered externally. After
LV RA
and the assert level V
PORR
(refer to Table 17).
uposc
are derived from the VDD2.5 supply. The assert level
PORA
CQOUT
3.8.6.2SRAM Data Retention
The SRAM contents integrity is guaranteed if the PORF bit in the CRGFLG register is not set following a
reset operation.
3.8.6.3External Reset
When external reset is asserted for a time greater than PW
and the CPU starts fetching the reset vector without doing a clock quality check, if there was stable
oscillation before reset.
, the CRG module generates an internal reset
RSTL
3.8.6.4Stop Recovery
The MCU can be returned to run mode from the stop mode by an external interrupt. A clock quality check
is performed in the same manner as for POR before releasing the clocks to the system.
3.8.6.5Pseudo Stop and Doze Recovery
Recovery from pseudo stop and doze modes are essentially the same, since the oscillator is not stopped in
either mode. The controller is returned to run mode by internal or external interrupts or other wakeup events
in the system. After t
continues to execute code if the wakeup event was not an interrupt.
18MAC7100 Microcontroller Family Hardware Specifications MOTOROLA
, the CPU fetches an interrupt vector if the wakeup event was an interrupt, or
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Electrical Characteristics
Freescale Semiconductor, Inc.
3.9External Bus Timing Specifications
Table 22 lists processor bus input timings, which are shown in Figure 6, Figure 7 and Figure 8.
NOTE
All processor bus timings are synchronous; that is, input setup/hold and
output delay with respect to the rising edge of a reference clock. The
reference clock is the CLKOUT output.
All other timing relationships can be derived from these values.
Table 22. External Bus Input Timing Specifications
nc...
I
cale Semiconductor,
Frees
2
VL = V
VL = V
1
Control Inputs
2
Data Inputs
1.5 V1.5 V
IH
IL
IH
IL
SymbolMinMax Unit
CYC
t
CVCH
t
CHCII
DIVCH
CHDII
1.5 V
t
HOLD
ValidInvalidInvalid
t
= 1.5 ns
RISE
t
= 1.5 ns
FALL
Num CRating
L1CLKOUTt
L2aControl input valid to CLKOUT high
L3aCLKOUT high to control inputs invalid
L4Data input (DATA[15:0]) valid to CLKOUT hight
L5CLKOUT high to data input (DATA[15:0]) invalidt
1
Timing specifications have been indicated taking into account the full drive strength for the pads.
2
TA pins are being referred to as control inputs.
CLKOUT(45MHz)
t
SETUP
Input Setup & Hold
Input Rise Time
Input Fall Time
VH = V
VH = V
23—ns
13—ns
0—ns
9—ns
0—ns
CLKOUT
L4
Inputs
Figure 6. General Input Timing Requirements
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Page 20
Electrical Characteristics
Freescale Semiconductor, Inc.
3.9.1Read and Write Bus Cycles
Table 23 lists processor bus output timings. Read/write bus timings listed in Table 23 are shown in Figure 7
and Figure 8.
Table 23. External Bus Output Timing Specifications
NumCRatingSymbolMinMaxUnit
Control Outputs
L6aCLKOUT high to chip selects valid
L6bCLKOUT high to byte select (BS
[1:0]) valid
1
2
t
CHCV
t
CHBV
—0.5t
—0.5t
+ 10ns
CYC
+ 10ns
CYC
L6cCLKOUT high to output select (OE) valid
L7aCLKOUT high to control output (BS[1:0], OE) invalidt
L7bCLKOUT high to chip selects invalidt
nc...
I
L8CLKOUT high to address (ADDR[21:0]) and control
(R/W) valid
L9CLKOUT high to address (ADDR[21:0]) and control
) invalid
(R/W
L10CLKOUT high to data output (DATA[15:0]) validt
L11CLKOUT high to data output (DATA[15:0]) invalidt
L12
1
CSn transitions after the falling edge of CLKOUT.
2
BSn transitions after the falling edge of CLKOUT.
3
OE transitions after the falling edge of CLKOUT.
CLKOUT high to data output (DATA[15:0]) high impedance
Address and Attribute Outputs
cale Semiconductor,
3
Data Outputs
t
CHOV
CHCOI
CHCI
t
CHAV
t
CHAI
CHDOV
CHDOI
t
CHDOZ
—0.5t
0.5t
+ 2—ns
CYC
0.5t
+ 2—ns
CYC
—10ns
2—ns
—13ns
2—ns
—9ns
+ 10ns
CYC
Frees
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Electrical Characteristics
CLKOUT
Freescale Semiconductor, Inc.
S0S2S1S3S4S5S0S1S2S3S4S5
L6a
n
CS
L8
ADDR[21:0]
L6c
OE
nc...
I
DATA[15:0]
R/W
L6b
BS[1:0]
TA (H)
Figure 7. Read/Write (Internally Terminated) Bus Timing
L7b
L7a
L7aL7a
L4
L5
cale Semiconductor,
L6a
L8
L8
L6b
L1
L10
L7b
L9
L9
L11
L12
Frees
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Electrical Characteristics
Freescale Semiconductor, Inc.
S0S2S1S3S4S5S0
CLKOUT
L6a
L7b
CS
n
L8
L9
ADDR[21:0]
L6c
L7a
OE
nc...
I
R/W
L6b
L7a
BS[1:0]
L4
L5
S1
cale Semiconductor,
Frees
DATA[15:0]
TA
L2a
L3a
Figure 8. Read Bus Cycle Terminated by TA
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Freescale Semiconductor, Inc.
Electrical Characteristics
3.10Analog-to-Digital Converter Characteristics
Table 24 and Table 25 show conditions under which the ATD operates. The following constraints exist to
obtain full-scale, full range results: V
sample buffer amplifier cannot drive beyond the ATD power supply levels. If the input level goes outside
of this range it will effectively be clipped.
Table 24. ATD Operating Characteristics in 5 V Range
Conditions shown in Table 6 unless otherwise noted
Num CRatingSymbolMinTypMaxUnit
A ≤ VRL ≤ VIN ≤ VRH ≤ VDDA. This constraint exists because the
SS
nc...
I
cale Semiconductor,
Frees
M1D Reference Potential Low
High
M2C Differential Reference Voltage
M3D ATD Clock Frequencyf
M4D ATD 10-bit Conversion PeriodClock Cycles
M5D ATD 8-bit Conversion PeriodClock Cycles
M6D Recovery Time (VDDA = 5.0 V)t
M7P
M8P
1
Full accuracy is not guaranteed when differential voltage is less than 4.50 V
2
Minimum time assumes final sample period of 2 ATD clocks; maximum time assumes final sample period of 16 ATD clocks.
Reference Supply current 1 ATD module enabled
Reference Supply current 2 ATD modules enabled
1
@ 2.0MHz f
@ 2.0MHz f
2
ATD CLK
2
ATD CLK
V
RL
V
RH
VRH – V
ATD CLK
N
CONV10
T
CONV10
N
CONV8
T
CONV8
REC
I
REF
I
REF
VSSA
A ÷ 2
V
DD
4.505.005.25V
RL
0.5—2.0MHz
14
7
12
6
——20µs
——0.375mA
——0.750mA
—
—
—
—
—
—
V
A ÷ 2
DD
A
V
DD
28
14
26
13
V
V
Cycles
µs
Cycles
µs
Table 25. ATD Operating Characteristics in 3.3 V Range
Conditions shown in Table 6, with VDDX = 3.3 V ±10% and a temperature maximum of +140°C unless otherwise noted.
Num CRatingSymbolMinTypMaxUnit
N1D Reference Potential Low
High
N2C Differential Reference Voltage
N3D ATD Clock Frequencyf
N4D ATD 10-bit Conversion PeriodClock Cycles
Conv, Time at 2.0MHz ATD Clock f
N5D ATD 8-bit Conversion PeriodClock Cycles
Conv, Time at 2.0MHz ATD Clock f
N6D Recovery Time (VDDA=5.0 V)t
N7P
N8P
1
Full accuracy is not guaranteed when differential voltage is less than 3.0 V
2
Minimum time assumes final sample period of 2 ATD clocks; maximum time assumes final sample period of 16 ATD clocks.
Reference Supply current 1 ATD module enabled
Reference Supply current 2 ATD modules enabled
1
2
ATD CLK
2
ATD CLK
V
RL
V
RH
V
RH–VRL
ATD CLK
N
CONV10
T
CONV10
N
CONV8
T
CONV8
REC
I
REF
I
REF
VSSA
A ÷ 2
V
DD
3.03.33.6V
0.5—2.0MHz
14
7
12
6
——20µs
——0.375mA
——0.250mA
—
—
—
—
—
—
V
A ÷ 2
DD
A
V
DD
28
14
26
13
V
V
Cycles
µs
Cycles
µs
3.10.1 Factors Influencing Accuracy
Three factors — source resistance, source capacitance and current injection — have an influence on the
accuracy of the ATD.
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Electrical Characteristics
Freescale Semiconductor, Inc.
3.10.1.1 Source Resistance
Due to the input pin leakage current as specified in Table 15 in conjunction with the source resistance there
will be a voltage drop from the signal source to the
AT D
input. The maximum specified source resistance RS,
results in an error of less than 1/2 LSB (2.5 mV) at the maximum leakage current. If the device or operating
conditions are less than the worst case, or leakage-induced errors are acceptable, larger values of source
resistance are allowed.
3.10.1.2 Source Capacitance
When sampling, an additional internal capacitor is switched to the input. This can cause a voltage drop due
to charge sharing with the external capacitance and the pin capacitance. For a maximum sampling error of
the input voltage ≤ 1 LSB, then the external filter capacitor must be calculated as,
Cf ≥ 1024 × (C
INS
– C
INN
)
.
3.10.1.3 Current Injection
There are two cases to consider:
nc...
I
cale Semiconductor,
1. A current is injected into the channel being converted. The channel being stressed has conversion
values of 0x3FF (0xFF in 8-bit mode) for analog inputs greater than V
than V
unless the current is higher than specified as disruptive condition.
RL
and 0x000 for values less
RH
2. Current is injected into pins in the neighborhood of the channel being converted. A portion of this
current is picked up by the channel (coupling ratio K), This additional current impacts the
accuracy of the conversion depending on the source resistance. The additional input voltage error
on the converted channel can be calculated as V
ERR
=K× R
× I
INJ
, with I
S
being the sum of the
INJ
currents injected into the two pins adjacent to the converted channel.
Table 26. ATD Electrical Characteristics
Conditions are shown in Table 6 unless otherwise noted
Num CRatingSymbolMinTypMaxUnit
P1C Max input Source ResistanceR
P2T Total Input Capacitance
Non Sampling
Sampling
P3C Disruptive Analog Input CurrentI
P4C Coupling Ratio positive current injectionK
P5C Coupling Ratio negative current injectionK
C
C
S
INN
INS
NA
p
n
—— 1KΩ
—
—
–2.5—2.5mA
——TBDA/A
——TBDA/A
—
—
10
22
pF
pF
Frees
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Electrical Characteristics
Freescale Semiconductor, Inc.
3.10.2 ATD Accuracy
Table 27 and Table 28 specify the ATD conversion performance excluding any errors due to current
injection, input capacitance and source resistance.
Table 27. ATD Conversion Performance in 5 V Range
Conditions shown in Table 6 unless otherwise noted.
V
= VRH – VRL = 5.12 V, resulting in one 8 bit count = 20 mV and one 10 bit count = 5 mV
REF
f
nc...
I
1
= 2.0 MHz, 4.5 V ≤ VDDA ≤ 5.5 V
ATDCLK
Num CRatingSymbolMinTypMaxUnit
Q1P 10-bit ResolutionLSB—5—mV
Q2P 10-bit Differential NonlinearityDNL–1—1Counts
Q3P 10-bit Integral NonlinearityINL–2.5±1.52.5Counts
Q4P 10-bit Absolute Error
Q5P 8-bit ResolutionLSB—20—mV
Q6P 8-bit Differential NonlinearityDNL–0.5—0.5Counts
Q7P 8-bit Integral NonlinearityINL–1.0±0.51.0Counts
Q8P 8-bit Absolute Error
These values include the quantization error which is inherently 1/2 count for any A/D converter.
1
1
AE–3±2.03Counts
AE–1.5±1.01.5Counts
cale Semiconductor,
Frees
Table 28. ATD Conversion Performance in 3.3 V Range
Conditions shown in Table 6 unless otherwise noted.
V
= VRH – VRL = 5.12 V, resulting in one 8 bit count = 20 mV and one 10 bit count = 5 mV
REF
f
1
= 2.0 MHz, 4.5 V ≤ VDDA ≤ 5.5 V
ATDCLK
Num CRatingSymbolMinTypMaxUnit
R1P 10-bit ResolutionLSB—3.25—mV
R2P 10-bit Differential NonlinearityDNL–1.5—1.5Counts
R3P 10-bit Integral NonlinearityINL–3.5±1.53.5Counts
R4P 10-bit Absolute Error
R5P 8-bit ResolutionLSB—13—mV
R6P 8-bit Differential NonlinearityDNL–0.5—0.5Counts
R7P 8-bit Integral NonlinearityINL–1.5±1.01.5Counts
R8P 8-bit Absolute Error
These values include the quantization error which is inherently 1/2 count for any A/D converter.
1
1
AE–5±2.05Counts
AE–1.5±1.01.5Counts
For the following definitions see also Figure 8.
Differential Non-Linearity (DNL) is defined as the difference between two adjacent switching steps.
V
–
DNL i()
iVi1–
-----------------------1–=
1 LSB
The Integral Non-Linearity (INL) is defined as the sum of all DNLs:
n
INL n()DNL i()
∑
i1=
VnV0–
-------------------n–==
1 LSB
25MAC7100 Microcontroller Family Hardware Specifications MOTOROLA
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Freescale Semiconductor, Inc.
Electrical Characteristics
0x3FF
0x3FE
0x3FD
0x3FC
0x3FB
0x3FA
0x3F9
0x3F8
0x3F7
0x3F6
0x3F5
nc...
I
0x3F4
0x3F3
10-bit Resolution
9
8
7
6
5
4
3
2
1
0
0 10203040505055506550755085 5095 51055115
DNL
V
I–1
LSB
V
cale Semiconductor,
Figure 8 shows only definitions, for specification values refer to Table 27.
10-bit Absolute Error Boundary
8-bit Absolute Error Boundary
I
Ideal Transfer Curve
10-bit Transfer Curve
8-bit Transfer Curve
50605070 508050905100511051205 152535
Figure 9. ATD Accuracy Definitions
NOTE
0xFF
0xFE
0xFD
2
1
V
mV
IN
8-bit Resolution
Frees
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cale Semiconductor,
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Freescale Semiconductor, Inc.
Electrical Characteristics
3.10.3 ATD Electrical Specifications
Table 29 lists the DC electrical characteristics for the ATD module. Table 27 lists the analog-to-digital
conversion performance specifications.
All voltages referred to VSSA, –40 to 125oC, VDDA = 5.0 V ±10% and 2.0 MHz conversion rate unless otherwise
noted. Refer to Table 6 for additional operating conditions.
To obtain full-scale, full-range results, VSSA < VRL < V
the power supply levels. If the input level goes outside of this range, it will effectively be clipped.
Full accuracy is not guaranteed when the differential reference voltage is less than 4.5 V.
85°C, 105°C, and 125°C refer to the "C", "V", and "M" Temperature Options, respectively.
The input injection current is specified to 1 count of error.
10
g
Low
Run–40°C
Stop25°C
(low power) 25°C
5
8
High
3
RL
High
Low
25°C
85°C
105°C
125°C
85°C
105°C
125°C
85°C
105°C
125°C
6
Not Sampling
Sampling
7
=±3mA
INJ
)
4
4
4
4
4
4
4
4
4
4
4
4
4
4
9
9
V
RL
V
RH
V
– V
RH
RL
INDC
V
IH
V
IL
IDDA
run
pseudo_stop
IDDA
stop
REF
I
INJ
I
OFF
C
INN
C
INS
I
NA
K——10–4A/A
C
SAMP
< VRH < VDDA. Sample buffer amp cannot drive beyond
27MAC7100 Microcontroller Family Hardware Specifications MOTOROLA
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Freescale Semiconductor, Inc.
Electrical Characteristics
6
Maximum leakage occurs at maximum operating temperature. Current decreases by approximately one-half for
each 8 to 12 °C, in the ambient temperature range of 50 to 125 °C.
7
Below disruptive current conditions, the channel being stressed has conversion values of 0x3FF for analog inputs
greater than VRH and 0x000 for values less than VRL. This assumes that VDDA ≥ AVRH and VRL ≥ VSSA due to the
presence of the sample amplifier. Other channels are not affected by non-disruptive conditions.
8
Coupling Ratio, K, is defined as the ratio of the output current, I
current, I
voltage error on the channel under test is calculated as Verr = I
9
Total injection current is determined by the number of channels injecting (for example, 15), external injection voltage
(V
INJ–VPOSCLAMP
the same values. To determine the error voltage on the converted channel, only the two adjacent channels are
expected to contribute to the error voltage: V
10
For a maximum sampling error of the input voltage ≤ 1LSB, then the external filter capacitor, Cf ≥ 1024 × C
value of C
, when both adjacent pins are overstressed with the specified injection current. K = I
INJ
, or V
in the new design may be reduced, or increased slightly.
SAMP
INJ
– V
NEGCLAMP
), and the external source impedance, Rs, wherein all input channels have
errj
= (V
INJ
– V
CLAMP
, measured on the pin under test to the injection
OUT
x K x RS.
INJ
) × K × 2.
OUT
÷ I
INJ
. The input
SAMP
. The
nc...
I
cale Semiconductor,
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Num CRatingSymbolMinTypMaxUnit
T1D 10-bit ResolutionLSB—5—mV
T2D 10-bit Differential Nonlinearity
T3D 10-bit Integral Nonlinearity
T4D 10-bit Absolute Error
T5D Max input Source Impedance
1
All voltages referred to VSSA, VDDA = 5.0 V±10%, ATD clock = 2.1 Mhz., –40 to 125 °C.
2
Note: 1 LSB = 1 Count (At V
3
These values include quantization error which is inherently 1/2 count for any A/D converter.
4
This value is based on error attributed to the specified leakage value of TBD nA resulting in an error of less than 1/2
LSB (2.5 mV). If operating conditions are less than worst case or leakage-induced error is acceptable, larger values
of source resistance is allowable.
Table 30. ATD Performance Specifications
2
2
2, 3
4
= 5.12 V, one 8 bit count = 20 mV, one 10-bit count = 5 mV)
Figure 11 and Figure 12 illustrate master mode timing. Timing values are shown in Table 33.
Table 33. SPI Master Mode Timing Characteristics
1
nc...
I
cale Semiconductor,
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Conditions are shown in Table 6 unless otherwise noted, C
Num CRatingSymbolMinTypMaxUnit
W1a P Operating Frequencyf
W1b P SCK Period t
W2 D Enable Lead Timet
W3 D Enable Lag Timet
W4 D Clock (SCK) High or Low Timet
W5 D Data Setup Time (Inputs)t
W6 D Data Hold Time (Inputs)t
W9 D Data Valid (after Enable Edge)t
W10 D Data Hold Time (Outputs)t
W11 D Rise Time Inputs and Outputst
W12 D Fall Time Inputs and Outputst
1
The numbers 7, 8 in the column labeled “Num” are missing. This has been done on purpose to be consistent
between the Master and the Slave timing shown in Table 34.
sck
= 1/f
op
= 200pF on all outputs
LOAD
op
t
sck
lead
lag
wsck
su
hi
v
ho
r
f
t
bus
DC—1/4f
4—2048t
1/2— —t
1/2— —t
− 30—1024 t
25——ns
0——ns
——25ns
0——ns
——25ns
——25ns
bus
3.11.2Slave Mode
Figure 13 and Figure 14 illustrate the slave mode timing. Timing values are shown in Table 34.
Table 34. SPI Slave Mode Timing Characteristics
Conditions are shown in Table 6 unless otherwise noted, CLOAD = 200pF on all outputs
Num CRatingSymbolMinTypMaxUnit
X1a P Operating Frequencyf
X1b P SCK Period t
X2D Enable Lead Timet
X3D Enable Lag Timet
X4D Clock (SCK) High or Low Timet
X5D Data Setup Time (Inputs)t
X6D Data Hold Time (Inputs)t
X7D Slave Access Timet
X8D Slave SIN Disable Timet
X9D Data Valid (after SCK Edge)t
X10 D Data Hold Time (Outputs)t
X11 D Rise Time Inputs and Outputst
X12 D Fall Time Inputs and Outputst
sck
= 1/f
op
op
t
sck
lead
lag
wsck
su
hi
a
dis
v
ho
r
f
DC—1/4f
4—2048t
1——t
1——t
t
− 30——ns
cyc
25——ns
25——ns
—— 1t
—— 1t
——25ns
0——ns
——25ns
——25ns
bus
bus
sck
sck
ns
bus
bus
cyc
cyc
cyc
cyc
30MAC7100 Microcontroller Family Hardware Specifications MOTOROLA
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Electrical Characteristics
PCSx
(OUTPUT)
SCK
(CPOL = 0)
(OUTPUT)
SCK
(CPOL = 1)
(OUTPUT)
SIN
(INPUT)
SOUT
nc...
I
(OUTPUT)
1
If configured as output.
2
LSBFE = 0. For LSBFE = 1, bit order is LSB, bit 1, ..., bit 6, MSB.
MSB In
W9
MSB Out
W4
W11
W12
LSB In
LSB Out
W2
W1bW3
W4
W5
W6
2
2
Figure 11. SPI Master Timing (CPHA = 0)
Bit 6 ... 1
W9W10
Bit 6 ... 1
cale Semiconductor,
Frees
PCSx
(OUTPUT)
SCK
(CPOL = 0)
(OUTPUT)
SCK
(CPOL = 1)
(OUTPUT)
SIN
(INPUT)
SOUT
(OUTPUT)
W2
W1bW3
W4
W5
2
MSB In
W9
Port DataMaster LSB Out
1
If configured as output.
2
LSBF = 0. For LSBF = 1, bit order is LSB, bit 1, ..., bit 6, MSB.
Master MSB Out
Figure 12. SPI Master Timing (CPHA =1)
W4
W6
2
W12
W11
Bit 6 ... 1
W10
Bit 6 ... 1
W11
W12
LSB In
Port Data
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Freescale Semiconductor, Inc.
Electrical Characteristics
SS
(INPUT)
SCK
(CPOL = 0)
(INPUT)
SCK
(CPOL = 1)
(INPUT)
SOUT
(OUTPUT)
SIN
nc...
I
(INPUT)
Slave MSB OutBit 6 ... 1Slave LSB Out
X7X8
MSB In
X2
X1b
X4
X4
X9X10
X5
X6
Bit 6 ... 1
Figure 13. SPI Slave Timing (CPHA = 0)
X12
X11
LSB In
X11
X12
X10
X3
cale Semiconductor,
Frees
SS
(INPUT)
SCK
(CPOL = 0)
(INPUT)
SCK
(CPOL = 1)
(INPUT)
SOUT
(OUTPUT)
SIN
(INPUT)
X7
X2
X1b
X4
X4
X10
Slave MSB OutSlave LSB Out
X5
X6
MSB In
Figure 14. SPI Slave Timing (CPHA =1)
X12
X11
Bit 6 ... 1
Bit 6 ... 1
X11
X12
LSB In
X3
X8X9
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Page 33
Electrical Characteristics
Freescale Semiconductor, Inc.
3.12FlexCAN Electrical Specifications
Table 35. FlexCAN Wake-up Pulse Characteristics
Conditions are shown in Table 6 unless otherwise noted
Num CRatingSymbolMinTypMaxUnit
nc...
I
cale Semiconductor,
Frees
Y1P FlexCAN Wake-up dominant pulse filteredt
Y2P FlexCAN Wake-up dominant pulse passedt
WUP
WUP
—— 2µs
5——µs
3.13Program Flash and Data Flash Timing
Characteristics
NOTE
Unless otherwise noted the abbreviation NVM (Non-Volatile Memory) is
used for both program Flash and data Flash.
3.13.1 NVM timing
The time base for all NVM program or erase operations is derived from the system clock divided by two
(Fsys/2). A minimum system frequency f
The NVM modules do not have any means to monitor the frequency and will not prevent program or erase
operation at frequencies above or below the specified minimum. Attempting to program or erase the NVM
modules at a lower frequency a full program or erase transition is not assured.
The Flash and Data Flash program and erase operations are timed using a clock derived from the system
frequency using the CFMCLKD register. The frequency of this clock must be set within the limits specified
as f
NVMOP
and maximum f
. The minimum program and erase times shown in Table 36 are calculated for maximum f
. The maximum times are calculated for minimum f
bus
NVMfsys
3.13.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on the
frequency f
NVMOP
and can be calculated according to the following formula.
t
swpgm
3.13.1.2 Burst Programming
is required for performing program or erase operations.
1
------------------
9
⋅25
f
NVMOP
⋅+=
1
---------
f
bus
NVMOP
and a f
of 2 MHz.
bus
NVMOP
This applies only to the Flash where up to 32 words in a row can be programmed consecutively using burst
programming by keeping the command pipeline filled. The time to program a consecutive word can be
calculated as:
1
------------------
4
t
bwpgm
The time to program a whole row is:
t
brpgm
Burst programming is more than 2 times faster than single word programming.
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⋅9
f
NVMOP
t
swpgm
31 t
⋅+=
bwpgm
⋅+=
1
---------
f
bus
Page 34
Electrical Characteristics
Freescale Semiconductor, Inc.
3.13.1.3 Sector Erase
Erasing a 4k byte Flash sector takes:
t
era
The setup time can be ignored for this operation.
3.13.1.4 Mass Erase
Erasing a NVM block takes:
t
mass
The setup time can be ignored for this operation.
3.13.1.5 Blank Check
4000
20000
1
------------------
⋅≈
f
NVMOP
------------------
⋅≈
f
NVMOP
1
nc...
I
cale Semiconductor,
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The time it takes to perform a blank check on the Flash or Data Flash is dependant on the location of the
first non-blank word starting at relative address zero. It takes one bus cycle per word to verify plus a setup
of the command.
t
check
Table 36. NVM Timing Characteristics
Num CRatingSymbolMinTypMaxUnit
Z1D System Clock/2f
Z2D
Z3D Operating Frequencyf
Z4P Single Word Programming Timet
Z5D Flash Burst Programming consecutive wordt
Z6D Flash Burst Programming Time for 32 Wordst
Z7P Sector Erase Timet
Z8P Mass Erase Timet
Z9D Blank Check Time Flash per blockt
Z10 D Blank Check Time Data Flash per blockt
1
Conditions are shown in Table 6 unless otherwise noted
2
Restrictions for oscillator in crystal mode apply!
3
Minimum programming times are achieved under maximum NVM operating frequency f
4
Maximum erase and programming times are achieved under particular combinations of f
f
more information.
5
Minimum erase times are achieved under maximum NVM operating frequency f
6
Minimum time, if first word in the array is not blank
7
Maximum time to complete check on an erased block
Bus frequency for Programming or Erase Operations
. Refer to formulae in Section 3.13.1.1, “Single Word Programming,” through Section 3.13.1.4, “Mass Erase,” for
bus
location t
cyc
NVMfsys
f
NVMBUS
NVMOP
swpgm
bwpgm
brpgm
era
mass
check
check
10 t
⋅+⋅≈
cyc
1
0.5—50
1——MHz
150—200kHz
3
46
20.4
678.4
5
20
100
11
6
11
3
3
5
6
NVMOP
—74.5
—31 4µs
—1035.5
—26.7
—133
—32778
—2058 7t
and maximum bus frequency f
and bus frequency
NVMOP
.
NVMOP
2
MHz
4
4
4
µs
4
µs
ms
ms
7
t
cyc
cyc
bus
.
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Electrical Characteristics
Freescale Semiconductor, Inc.
3.13.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures. The failure rates for data retention and program/erase
cycling are specified at the operating conditions noted. The program/erase cycle count on the sector is
incremented every time a sector or mass erase event is executed.
Table 37. NVM Reliability Characteristics
Conditions shown in Table 6 unless otherwise noted.
NumCRatingMinUnit
Z10C Program/Data Flash Program/Erase endurance (–40C to +125C)10,000Cycles
Z11C Program/Data Flash Data Retention Lifetime15Years
NOTE
All values shown in Table 37 are target values and subject to
nc...
I
characterization.
For Flash cycling performance, each Program operation must be preceded
by an erase.
cale Semiconductor,
Frees
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Device Pin Assignments
4Device Pin Assignments
The MAC7100 Family is available in 208-pin ball grid array (MAP BGA), 144-pin low profile quad flat
(LQFP), 112-pin LQFP, and 100-pin LQFP package options. The family of devices offer pin-compatible
packaged devices to assist with system development and accommodate a direct application enhancement
path. Refer to Table 1 for a comparison of the peripheral sets and package options for each device.
Most pins perform two or more functions, which is described in more detail in the MAC7100Microcontroller Family Reference Manual (MAC7100RM/D). Figure 15, Figure 16, Figure 17, Figure 18,
and Figure 19 show the pin assignments for the various packages.
Figure 19. Pin Assignments for MAC7131 in 208-pin MAP BGA
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VSSPLL
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XFC EXTAL XTALPA14PD0PB9VSSXVSSX
Page 41
Freescale Semiconductor, Inc.
Mechanical Information
5Mechanical Information
5.1100-Pin LQFP Package
L
nc...
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cale Semiconductor,
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60
61
-A-
L
DETAIL A
80
120
M
0.20D
0.05
A-B
M
0.20D
E
CDATUM
-C-
SEATING
PLANE
DATUM
PLANE
H
G
-H-
W
X
DETAIL C
-D-
A
S
A-B
H
S
A-B
C
K
S
S
S
U
T
R
Q
41
40
M
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE
LEAD WHERE THE LEAD EXITS THE PLASTIC
BODY AT THE BOTTOM OF THE PARTING LINE.
4. DATUMS -A-, -B- AND -D- TO BE
DETERMINED AT DATUM PLANE -H-.
5. DIMENSIONS S AND V TO BE DETERMINED
AT SEATING PLANE -C-.
6. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE
PROTRUSION IS 0.25 PER SIDE. DIMENSIONS
A AND B DO INCLUDE MOLD MISMATCH
AND ARE DETERMINED AT DATUM PLANE -H-.
7. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION. DAMBAR CANNOT
BE LOCATED ON THE LOWER RADIUS OR
THE FOOT.
ALL DIMENSIONS ARE IN MILLIMETERS.
INTERPRET DIMENSIONS AND TOLERANCES PER
2.
ASME Y14.5M, 1994.
DIMENSION b IS MEASURED AT THE MAXIMUM
3.
SOLDER BALL DIAMETER, PARALLEL TO DATUM
PLANE Z.
DATUM Z (SEATING PLANE) IS DEFINED BY THE
4.
SPHERICAL CROWNS OF THE SOLDER BALLS.
PARALLELISM MEASEMENT SHALL EXCLUDE ANY
5.
EFFECT OF MARK ON TOP SURFACE OF PACKAGE.
MILLIMETERS
DIM MINMAX
A---2.00
A10.400.60
A21.001.30
b0.500.70
D17.00 BSC
E17.00 BSC
e1.00 BSC
S0.50 BSC
5
0.2 Z
4
Z
VIEW K
(ROTATED 90˚ CLOCKWISE)
0.2
208
Z
Frees
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Mechanical Information
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cale Semiconductor,
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