MOTOROLA MAC228A Technical data
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SEMICONDUCTOR TECHNICAL DATA
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MAC228A
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for industrial and consumer applications for full wave control of
ac loads such as appliance controls, heater controls, motor controls, and other power
switching applications.
• Sensitive Gate Triggering in 3 Modes for AC T riggering on Sinking Current
Sources
• Four Mode Triggering for Drive Circuits that Source Current
• All Diffused and Glass–Passivated Junctions for Parameter Uniformity and Sta-
bility
• Small, Rugged, Thermowatt Construction for Low Thermal resistance and High
Heat Dissipation
• Center Gate Geometry for Uniform Current Spreading
Series
TRIACs
8 AMPERES RMS
200 thru 800 VOL TS
MT2
MT1
MT2
G
CASE 221A-07
(TO-220AB)
STYLE 4
MT1
G
MT2
MAXIMUM RATINGS
Peak Repetitive Off-State Voltage
(TJ = –40 to 110°C
1/2 Sine Wave 50 to 60 Hz, Gate Open)
On-State RMS Current (TC = 80°C)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current
(One Full Cycle 60 Hz, TJ = 110°C)
Circuit Fusing
(t = 8.3 ms)
Peak Gate Current (t v 2 µs) I
Peak Gate Voltage (t v 2 µs) V
Peak Gate Power (t v 2 µs) P
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current (continued)
DRM
source such that the voltage ratings of the devices are exceeded.
(TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
(1)
MAC228A4
MAC228A6
MAC228A8
MAC228A10
V
DRM
200
400
600
800
I
T(RMS)
I
TSM
I2t 26 A2s
GM
GM
GM
8 Amps
80 Amps
"
2 Amps
"
10 Volts
20 Watts
Volts
Motorola Thyristor Device Data
Motorola, Inc. 1999
1
MAXIMUM RATINGS — continued
Rating Symbol Value Unit
Average Gate Power (TC = 80°C, t v 8.3 ms) P
Operating Junction Temperature Range T
Storage Temperature Range T
Mounting Torque 8 in. lb.
G(AV)
J
stg
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
θJC
R
θJA
T
L
ELECTRICAL CHARACTERISTICS (T
Peak Blocking Current
(VD = Rated V
Peak On-State Voltage
(ITM = 11 A Peak, Pulse Width v2 ms, Duty Cycle v2%)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
(VD = Rated V
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
Holding Current
(VD = 12 Vdc, ITM = 200 mA, Gate Open)
Gate–Controlled Turn–On Time
(VD = Rated V
Critical Rate of Rise of Off-State V oltage
(VD = Rated V
Critical Rate of Rise of Commutation Voltage
(VD = Rated V
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 260 °C
= 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
C
Characteristic
)T
DRM
, TC = 110°C, RL = 10 k)
DRM
, ITM = 16 A Peak, IG = 30 mA)
DRM
, Exponential Waveform, TC = 110°C)
DRM
, ITM = 11.3 A,
DRM
= 25°C
J
TJ = 110°C
Symbol Min Typ Max Unit
I
DRM
V
TM
I
GT
V
GT
0.2
0.2
I
H
t
gt
dv/dt — 25 — V/µs
dv/dt(c) — 5 — V/µs
0.5 Watts
–40 to 110 °C
–40 to 150 °C
2.0
62.5
—
—
— — 1.8 Volts
—
—
—
—
— — 15 mA
— 1.5 — µs
—
—
—
—
—
—
—
—
10
2
5
10
2
2.5
—
—
°C/W
µA
mA
mA
Volts
FIGURE 1 – RMS CURRENT DERATING FIGURE 2 – ON–STATE POWER DISSIPATION
110
104
°
98
92
, CASE TEMPERATURE ( C)
C
86
T
80
α
α
= CONDUCTION ANGLE
α
I
, RMS ON–STATE CURRENT (AMP)
T(RMS)
a
= 30
°
60
°
90
°
120
°
180
°
dc
7.0 8.0
6.00
5.01.0 2.0 3.0 4.0
8.0
6.0
4.0
, AVERAGE POWER (WATTS)
2.0
(AV)
P
10
α
α
= CONDUCTION ANGLE
TJ ≈ 110°C
0
I
T(RMS)
α
60
°
30
°
, RMS ON–STATE CURRENT (AMP)
a
= 180
°
120
°
90
°
5.01.0 2.0 3.0 4.0 7.0 8.0
6.00
dc
2 Motorola Thyristor Device Data
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