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SEMICONDUCTOR TECHNICAL DATA
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MAC228A
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for industrial and consumer applications for full wave control of
ac loads such as appliance controls, heater controls, motor controls, and other power
switching applications.
• Sensitive Gate Triggering in 3 Modes for AC T riggering on Sinking Current
Sources
• Four Mode Triggering for Drive Circuits that Source Current
• All Diffused and Glass–Passivated Junctions for Parameter Uniformity and Sta-
bility
• Small, Rugged, Thermowatt Construction for Low Thermal resistance and High
Heat Dissipation
• Center Gate Geometry for Uniform Current Spreading
Series
TRIACs
8 AMPERES RMS
200 thru 800 VOL TS
MT2
MT1
MT2
G
CASE 221A-07
(TO-220AB)
STYLE 4
MT1
G
MT2
MAXIMUM RATINGS
Peak Repetitive Off-State Voltage
(TJ = –40 to 110°C
1/2 Sine Wave 50 to 60 Hz, Gate Open)
On-State RMS Current (TC = 80°C)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current
(One Full Cycle 60 Hz, TJ = 110°C)
Circuit Fusing
(t = 8.3 ms)
Peak Gate Current (t v 2 µs) I
Peak Gate Voltage (t v 2 µs) V
Peak Gate Power (t v 2 µs) P
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current (continued)
DRM
source such that the voltage ratings of the devices are exceeded.
(TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
(1)
MAC228A4
MAC228A6
MAC228A8
MAC228A10
V
DRM
200
400
600
800
I
T(RMS)
I
TSM
I2t 26 A2s
GM
GM
GM
8 Amps
80 Amps
"
2 Amps
"
10 Volts
20 Watts
Volts
Motorola Thyristor Device Data
Motorola, Inc. 1999
1
MAXIMUM RATINGS — continued
Rating Symbol Value Unit
Average Gate Power (TC = 80°C, t v 8.3 ms) P
Operating Junction Temperature Range T
Storage Temperature Range T
Mounting Torque 8 in. lb.
G(AV)
J
stg
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
θJC
R
θJA
T
L
ELECTRICAL CHARACTERISTICS (T
Peak Blocking Current
(VD = Rated V
Peak On-State Voltage
(ITM = 11 A Peak, Pulse Width v2 ms, Duty Cycle v2%)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
(VD = Rated V
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
Holding Current
(VD = 12 Vdc, ITM = 200 mA, Gate Open)
Gate–Controlled Turn–On Time
(VD = Rated V
Critical Rate of Rise of Off-State V oltage
(VD = Rated V
Critical Rate of Rise of Commutation Voltage
(VD = Rated V
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 260 °C
= 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
C
Characteristic
)T
DRM
, TC = 110°C, RL = 10 k)
DRM
, ITM = 16 A Peak, IG = 30 mA)
DRM
, Exponential Waveform, TC = 110°C)
DRM
, ITM = 11.3 A,
DRM
= 25°C
J
TJ = 110°C
Symbol Min Typ Max Unit
I
DRM
V
TM
I
GT
V
GT
0.2
0.2
I
H
t
gt
dv/dt — 25 — V/µs
dv/dt(c) — 5 — V/µs
0.5 Watts
–40 to 110 °C
–40 to 150 °C
2.0
62.5
—
—
— — 1.8 Volts
—
—
—
—
— — 15 mA
— 1.5 — µs
—
—
—
—
—
—
—
—
10
2
5
10
2
2.5
—
—
°C/W
µA
mA
mA
Volts
FIGURE 1 – RMS CURRENT DERATING FIGURE 2 – ON–STATE POWER DISSIPATION
110
104
°
98
92
, CASE TEMPERATURE ( C)
C
86
T
80
α
α
= CONDUCTION ANGLE
α
I
, RMS ON–STATE CURRENT (AMP)
T(RMS)
a
= 30
°
60
°
90
°
120
°
180
°
dc
7.0 8.0
6.00
5.01.0 2.0 3.0 4.0
8.0
6.0
4.0
, AVERAGE POWER (WATTS)
2.0
(AV)
P
10
α
α
= CONDUCTION ANGLE
TJ ≈ 110°C
0
I
T(RMS)
α
60
°
30
°
, RMS ON–STATE CURRENT (AMP)
a
= 180
°
120
°
90
°
5.01.0 2.0 3.0 4.0 7.0 8.0
6.00
dc
2 Motorola Thyristor Device Data
P ACKAGE DIMENSIONS
SEATING
–T–
PLANE
FB
Q
4
A
123
T
U
H
K
C
S
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
Z
L
V
R
J
G
D
N
CASE 221A-07
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
MILLIMETERSINCHES
(TO–220AB)
ISSUE Z
Motorola Thyristor Device Data
3
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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4 Motorola Thyristor Device Data
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