MOTOROLA MAC218A8 Technical data

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SEMICONDUCTOR TECHNICAL DATA

Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.

• Blocking Voltage to 600 Volts

• Glass Passivated Junctions for Greater Parameter Uniformity and Stability

• TO-220 Construction Low Thermal Resistance, High Heat Dissipation and Dura-

bility

• Gate Triggering Guaranteed in Four Modes

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by MAC218A8/D

MAC218A8

TRIACs

8 AMPERES RMS

600 VOL TS

MT2

G

MT1

MT2

MAXIMUM RATINGS

Peak Repetitive Off-State Voltage

(Gate Open, TJ = 25 to 125°C) MAC218A8

On-State Current RMS

(Conduction Angle = 360°, TC = +80°C)

Peak Non-repetitive Surge Current

(One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current)

Fusing Current

(t = 8.3 ms)

Peak Gate Power

(TC = +80°C, Pulse Width = 2 µs)

Average Gate Power

(TC = +80°C, t = 8.3 ms)

Peak Gate Trigger Current

(Pulse Width = 1 µs)
Operating Junction Temperature Range T
Storage Temperature Range T

1. V

for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that

DRM

the voltage ratings of the devices are exceeded.

(TJ = 25°C unless otherwise noted.)

Rating

(1)

MT1

MT2

G

CASE 221A-07

(TO-220AB)

STYLE 4

Symbol Value Unit

V

DRM

I

T(RMS)

I

TSM

I2t 40 A2s

P

GM

P

G(AV)

I

GTM

J

stg

600

8 Amps

100 Amps

16 Watts

0.35 Watt

4 Amps

–40 to +125 °C
–40 to +150 °C

Volts

Motorola Thyristor Device Data

 Motorola, Inc. 1999

1

MAC218A8

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R

θJC

R

θJA
T

L

ELECTRICAL CHARACTERISTICS (T

Peak Blocking Current

(VD = Rated V

Peak On-State Voltage (Either Direction)

(ITM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle t 2%)
Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 12Ω)

Trigger Mode

MT2(+), Gate(+); MT2(+), Gate(–); MT2(–), Gate(–)

MT2(–), Gate(+)
Gate Trigger Voltage (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)

(Main Terminal Voltage = Rated V

MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+)

Holding Current (Either Direction)

(VD = 24 Vdc, Gate Open,

Initiating Current = 200 mA)
Critical Rate of Rise of Commutating Off-State Voltage

(VD = Rated V

di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
Critical Rate of Rise of Off-State V oltage

(VD = Rated V

TJ = 125°C)

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 260 °C

= 25°C unless otherwise noted.)

C

Characteristic

, gate open) TJ = 25°C

DRM

, ITM = 11.3 A, Commutating

DRM

, Exponential Voltage Rise, Gate Open,

DRM

TJ = 125°C

, RL = 10 kΩ, TJ = +125°C)

DRM

Symbol Min Typ Max Unit

I

DRM

V

TM

I

GT

V

GT

I

H

dv/dt(c) — 5 — V/µs

dv/dt — 100 — V/µs

—
—

— 1.7 2 Volts

—
—

—
—
—
—

0.2

0.2
— — 50 mA

—
—

—
—

0.9

0.9

1.1

1.4

—
—

2.0

62.5

10

2

50
75

2
2
2

2.5

—
—

°C/W

µA

mA

mA

Volts

FIGURE 2 — POWER DISSIPATION

I

RMS ON STATE CURRENT (AMPS)

T(RMS)

7.06.05.04.03.02.01.00

125

115

°

105

95

TEMPERATURE ( C)

85

C

T , MAXIMUM ALLOWABLE CASE

75

FIGURE 1 — CURRENT DERATING

10

8.0

6.0

4.0

2.0

(AV)

P , AVERAGE POWER DISSIPATION (WATTS)

0

I

, RMS ON STATE CURRENT (AMPS)

T(RMS)

8.07.06.05.04.03.02.01.0

0

2 Motorola Thyristor Device Data

8.0