MOTOROLA MAC12 User Manual
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SEMICONDUCTOR TECHNICAL DATA
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*
TRIACS
Silicon Bidirectional Thyristors
Designed for high performance full–wave ac control applications where high
noise immunity and commutating di/dt are required.
• Blocking Voltage to 800 Volts
• On–State Current Rating of 12 Amperes RMS at 70°C
• Uniform Gate Trigger currents in Three Modes
• High Immunity to dv/dt — 250 V/µs minimum at 125°C
• High Commutating di/dt — 6.5 A/ms minimum at 125°C
• Industry Standard TO–220 AB Package
• High Surge Current Capability — 120 Amperes
MT2
MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Peak Repetitive Off–State V oltage
(TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12D
On–State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 70°C)
Peak Non–repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms) I2t 41 A2sec
Peak Gate Power (Pulse Width v1.0 µs, TC = 80°C) P
Average Gate Power (t = 8.3 ms, TC = 80°C) P
Operating Junction Temperature Range T
Storage Temperature Range T
(1)
MAC12M
MAC12N
V
DRM
I
T(RMS)
I
TSM
GM
G(AV)
J
stg
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
ELECTRICAL CHARACTERISTICS (T
— Junction to Ambient
Characteristic
= 25°C unless otherwise noted)
J
Symbol Min Typ Max Unit
R
R
θJC
θJA
L
OFF CHARACTERISTICS
Peak Repetitive Blocking Current TJ = 25°C
(VD = Rated V
(1) V
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
and V
DRM
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
, Gate Open) TJ = 125°C
DRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
RRM
I
DRM
MT1
MT2
—
—
TRIACS
12 AMPERES RMS
400 thru 800
VOLTS
G
CASE 221A-09
(TO-220AB)
Style 4
400
600
800
12 A
100 A
16 Watts
0.35 Watts
–40 to +125
–40 to +150
2.2
62.5
260 °C
—
—
0.01
2.0
MT2
Volts
°C
°C
°C/W
mA
REV 2
Motorola Thyristor Device Data
Motorola, Inc. 1999
1
ELECTRICAL CHARACTERISTICS
Characteristic
ON CHARACTERISTICS
Peak On–State Voltage* (ITM = "17 A) V
Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
Hold Current (VD = 12 V, Gate Open, Initiating Current = "150 mA) I
Latch Current (VD = 24 V, IG = 35 mA)
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–)
Gate Trigger V oltage (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current*
(VD = 400 V , ITM = 4.4A, Commutating dv/dt = 18 V/ µs, Gate Open,
TJ = 125°C, f = 250 Hz, No Snubber)
Critical Rate of Rise of Off–State V oltage
(VD = Rated V
*Indicates Pulse Test: Pulse Width v2.0 ms, Duty Cycle v2%.
, Exponential Waveform, Gate Open, TJ = 125°C)
DRM
(TJ = 25°C unless otherwise noted)
Symbol Min Typ Max Unit
TM
I
GT
H
I
L
V
GT
(dv/dt)c 6.5 — — A/ms
dv/dt 250 — — V/µs
— — 1.85 Volts
5.0
5.0
5.0
— 20 40 mA
—
—
0.5
0.5
0.5
13
16
18
20
30
0.69
0.77
0.72
35
35
35
50
80
1.5
1.5
1.5
mA
mA
Volts
2 Motorola Thyristor Device Data
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