Motorola DAN222 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by DAN222/D
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in
ultra high speed switching applications. This device is housed in the SOT–416/SC–90
package which is designed for low power surface mount applications, where board
space is at a premium.
• Fast t
• Low C
• Available in 8 mm Tape and Reel
MAXIMUM RATINGS
DEVICE MARKING
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
1. t = 1 µS
2. trr Test Circuit on following page.
rr
D
(TA = 25°C)
Rating Symbol Value Unit
Reverse Voltage V
Peak Reverse Voltage V
Forward Current I
Peak Forward Current I
Peak Forward Surge Current
DAN222 = N9
Rating Symbol Max Unit
Power Dissipation P
Junction Temperature T
Storage Temperature T
= 25°C)
A
Characteristic
Reverse Voltage Leakage Current I
Forward Voltage V
Reverse Breakdown Voltage V
Diode Capacitance C
Reverse Recovery Time trr(2) IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 I
Symbol Condition Min Max Unit
R
F
R
D
FM
I
FSM
R
RM
F
(1)
D
J
stg
80 Vdc
80 Vdc
100 mAdc
300 mAdc
2.0 Adc
150 mW
150 °C
–55 ~ +150 °C
VR = 70 V — 0.1 µAdc
IF = 100 mA — 1.2 Vdc
IR = 100 µA 80 — Vdc
VR = 6.0 V, f = 1.0 MHz — 3.5 pF
SOT–416/SC–90 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODE
SURFACE MOUNT
3
2
1
CASE 463–01, STYLE 4
SOT–416/SC–90
CATHODE
3
12
ANODE
— 4.0 ns
R
Thermal Clad is a trademark of the Bergquist Company
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
DAN222
TYPICAL ELECTRICAL CHARACTERISTICS
100
10
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4
TA = 85°C
TA = –40°C
TA = 25°C
0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
1.2
A)
µ
, REVERSE CURRENT (
R
I
0.001
10
1.0
0.1
0.01
0
10 20 30 40
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage Figure 2. Reverse Current
1.0
0.9
0.8
50
, DIODE CAPACITANCE (pF)
0.7
D
C
0.6
0
2468
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 3. Diode Capacitance
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
t
r
t
p
I
t
R
A
L
V
10%
90%
R
tp = 2 µs
tr = 0.35 ns
F
t
rr
Irr = 0.1 I
IF = 5.0 mA
VR = 6 V
RL = 100 Ω
t
R
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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