Motorola BUX48A, BUX48 Datasheet
3–401
Motorola Bipolar Power Transistor Device Data
The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. They are particularly
suited for line–operated SWITCHMODE applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn–Off Times
60 ns Inductive Fall Time — 25_C (Typ)
120 ns Inductive Crossover Time — 25_C (Typ)
Operating Temperature Range –65 to +200_C
100_C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltage
Leakage Currents (125_C)
MAXIMUM RATINGS
Rating
Symbol
BUX48
BUX48A
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
Collector–Emitter Voltage
V
CEO(sus)
400
450
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector–Emitter Voltage (VBE = – 1.5 V)
VCEX
850
1000
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Emitter Base Voltage
V
EB
7
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Current — Continuous
— Peak (1)
— Overload
I
C
I
CM
I
OI
15
30
60
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Adc
Base Current — Continuous
— Peak (1)
I
B
I
BM
5
20
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Adc
Total Power Dissipation — TC = 25_C
— TC = 100_C
Derate above 25_C
P
D
175
100
1
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Watts
W/_C
Operating and Storage Junction Temperature Range
TJ, T
stg
–65 to +200
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
Thermal Resistance, Junction to Case
R
θJC
1
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
T
L
275
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
SWITCHMODE is a trademark of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUX48/D
Motorola, Inc. 1995
15 AMPERES
NPN SILICON
POWER TRANSISTORS
400 AND 450 VOLTS
V
(BR)CEO
850–1000 VOLTS
V
(BR)CEX
175 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 7
3–402
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 200 mA, IB = 0) L = 25 mH BUX48
BUX48A
V
CEO(sus)
400
450
—
—
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current
(V
CEX
= Rated Value, V
BE(off)
= 1.5 Vdc)
(V
CEX
= Rated Value, V
BE(off)
= 1.5 Vdc, TC = 125_C)
I
CEX
—
—
—
—
0.2
2
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Collector Cutoff Current
(VCE = Rated V
CEX
, RBE = 10 Ω) TC = 25_C
TC = 125_C
I
CER
—
—
—
—
0.5
3
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
I
EBO
—
—
0.1
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Emitter–Base Breakdown Voltage
(IE = 50 mA – IC = 0)
V
(BR)EBO
7
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
I
S/b
See Figure 12
ÎÎÎ
ÎÎÎ
ÎÎÎ
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 13
ÎÎÎ
ÎÎÎ
ÎÎÎ
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 10 Adc, VCE = 5 Vdc) BUX48
(IC = 8 Adc, VCE = 5 Vdc) BUX48A
h
FE
8
8
—
—
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 2 Adc)
(IC = 15 Adc, IB = 3 Adc) BUX48
(IC = 10 Adc, IB = 2 Adc, TC = 100_C)
(IC = 8 Adc, IB = 1.6 Adc)
(IC = 12 Adc, IB = 2.4 Adc) BUX48A
(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)
V
CE(sat)
—
—
—
—
—
—
—
—
—
—
—
—
1.5
5
2
1.5
5
2
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 2 Adc) BUX48
(IC = 10 Adc, IB = 2 Adc, TC = 100_C)
(IC = 8 Adc, IB = 1.6 Adc)
(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C) BUX48A
V
BE(sat)
—
—
—
—
—
—
—
—
1.6
1.6
1.6
1.6
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
test
= 1 MHz)
C
ob
—
—
350
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
SWITCHING CHARACTERISTICS Resistive Load (Table 1)
Delay Time
t
d
—
0.1
0.2
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Rise Time
IC = 10 A, IB = 2 A BUX48
IC = 8 A, IB = 1.6 A BUX48A
t
r
—
0.4
0.7
ÎÎÎ
ÎÎÎ
ÎÎÎ
Storage Time
IC = 8 A, IB = 1.6 A BUX48A
Duty Cycle = 2%, V
BE(off)
= 5 V
t
s
—
1.3
2
ÎÎÎ
ÎÎÎ
ÎÎÎ
Fall Time
Tp = 30 µs, VCC = 300 V
t
f
—
0.2
0.4
ÎÎÎ
ÎÎÎ
ÎÎÎ
Inductive Load, Clamped (Table 1)
Storage Time
C
= 10 A
t
sv
—
1.3
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Fall Time
IC = 10 A
IB1 = 2 A BUX48
(TC = 25_C)
t
fi
—
0.06
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
Storage Time
t
sv
—
1.5
2.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
Crossover Time
IC = 8 A
I
= 1.6 A BUX48A
_
C)
t
c
—
0.3
0.6
ÎÎÎ
ÎÎÎ
ÎÎÎ
Fall Time
IB1 = 1.6 A BUX48A
_
C)
t
fi
—
0.17
0.35
ÎÎÎ
ÎÎÎ
ÎÎÎ
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%.
Vcl = 300 V, V
BE(off)
= 5 V, Lc = 180µH
I
(TC = 100
3–403
Motorola Bipolar Power Transistor Device Data
C, CAPACITANCE (pF)
, COLLECTOR CURRENT ( A)
µ
I
C
V
BE
, BASE–EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
IC, COLLECTOR CURRENT (AMPS)
0.3 3
2
1
0.7
0.5
5
IC, COLLECTOR CURRENT (AMPS)
3
2
1
0.7
0.5
0.3
0.2
0.3
IC = 5 A
50
1
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
1
2 3 5 8 10 20 30 50
20
10
7
Figure 2. Collector Saturation Region
0.1
IB, BASE CURRENT (AMPS)
0.1
0.3 0.5
3
0.5
0.3
30
h
FE
, DC CURRENT GAIN
5
3
2
VCE = 5 V
1 2 3 4
Figure 3. Collector–Emitter Saturation Voltage
1011 2 3 7 10 5020 305
Figure 4. Base–Emitter Voltage
Figure 5. Collector Cutoff Region
10
5
1
–0.4
Figure 6. Capacitance
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10
–1
–0.2 0 0.2 0.4 0.6
10 k
1
VR, REVERSE VOLTAGE (VOLTS)
10
10
1 k
10
0
100 1000
100
FORWARD
0.1
VCE = 250 V
125°C
90%
75
°
C
7.5 A
TC = 25°C
TJ = 25°C
TJ = 100°C
REVERSE
10
1
10
2
10
3
10
4
C
ib
β
f
= 5
10%
10 A 15 A
90%
10%
TJ = 150°C
100°C
25°C
C
ob
TJ = 25°C
DC CHARACTERISTICS
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