Motorola BUT33 Datasheet

1
Motorola Bipolar Power Transistor Device Data
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The BUT33 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications such as:
AC and DC Motor Controls
Switching Regulators
Inverters
Solenoid and Relay Drivers
Fast Turn Off Times
800 ns Inductive Fall Time at 25_C (Typ)
2.0 µs Inductive Storage Time at 25_C (Typ)
Operating Temperature Range –65 to 200_C
MAXIMUM RATINGS
Rating
Symbol
ОООООООО
ОООООООО
ОООООООО
BUT33
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Collector–Emitter Voltage
V
CEO(sus)
ОООООООО
ОООООООО
ОООООООО
400
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector–Emitter Voltage
V
CEV
ОООООООО
ОООООООО
ОООООООО
600
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Emitter Base Voltage
V
EB
ОООООООО
ОООООООО
ОООООООО
10
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector Current — Continuous
Collector Current — Peak (1)
I
C
I
CM
ОООООООО
ОООООООО
ОООООООО
ОООООООО
56 75
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Base Current — Continuous
Base Current — Peak (1)
I
B
I
BM
ОООООООО
ОООООООО
ОООООООО
ОООООООО
12 15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Free Wheel Diode Forward Current — Continuous
Free Wheel Diode Forward Current — Peak
I
F
I
FM
ОООООООО
ОООООООО
ОООООООО
56 75
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25_C
P
D
ОООООООО
ОООООООО
ОООООООО
ОООООООО
ОООООООО
250 140
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Watts
W/_C
Operating and Storage Junction Temperature Range
TJ, T
stg
ОООООООО
ОООООООО
ОООООООО
–65 to +200
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
ОООООООО
ОООООООО
ОООООООО
Max
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Thermal Resistance, Junction to Case
R
θJC
ОООООООО
ОООООООО
ОООООООО
0.7
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C/W
Maximum Lead Temperature for Soldering Purpose
1/8 from Case for 5 Seconds
T
L
ОООООООО
ОООООООО
ОООООООО
ОООООООО
275
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle x10%. Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUT33/D
Motorola, Inc. 1995

56 AMPERES NPN SILICON
POWER DARLINGTON
TRANSISTOR
600 VOLTS
250 WATTS
CASE 197A–05
TO–204AE
(TO–3)
100≈ 16
REV 7
BUT33
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 100 mA, IB = 0)
V
CEO(sus)
400
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc)
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc, TC = 100_C)
I
CEV
— —
— —
0.2
4.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Emitter Cutoff Current
(VEB = 20 V, IC = 0)
I
EBO
350
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
I
S/b
See Figure 16
ÎÎÎ
ÎÎÎ
ÎÎÎ
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 17
ÎÎÎ
ÎÎÎ
ÎÎÎ
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 20 A, VCE = 5 V) (IC = 36 A, VCE = 5 V)
h
FE
30 20
— —
— —
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector–Emitter Saturation Voltage
(IC = 20 A, IB = 1 A) (IC = 36 A, IB = 3.6 A) (IC = 44 A, IB = 4.4 A) (IC = 56 A, IB = 11.2 A)
V
CE(sat)
— — — —
— — — —
2.0
2.5
3.0
5.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage
(IC = 20 A, IB = 1 A) (IC = 36 A, IB = 3.6 A) (IC = 44 A, IB = 4.4 A)
V
BE(sat)
— — —
— — —
2.5
2.9
3.3
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Diode Forward Voltage
(IF = 44 A)
V
f
4.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
SWITCHING CHARACTERISTICS
Inductive Load Clamped (Table 1)
Storage Time
TC = 25_C IC = 36 A
t
s
2.0
3.3
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Fall Time
IB = 3.6 A
t
f
0.8
1.6
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Storage Time
t
s
2.2
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Fall Time
See Table 1
TC = 100_C V
BE(off)
= 5 V
t
f
0.8
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
(1) Pulse Test: PW = 300 µs, Duty Cycle 2%.
See Table 1
BUT33
3
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
3.2
1
IC, COLLECTOR CURRENT (AMPS)
2 3 7 10 50
2.8
2.5
2.2
1.9
2.5
IC, COLLECTOR CURRENT (AMPS)
2.2
1.9
1.6
1.3
1.0
0.7
0.4
TC = 25°C IC/IB = 10
1.6
1.3
20
IC = 40 A
400
1
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
1
2 3 4 6 10 20 30 40 60
100
30 20
10
Figure 2. Collector Saturation Region
0.1 IB, BASE CURRENT (AMPS)
0
0.2 0.3 0.5 1
4
3
2
1
200
50
h
FE
, DC CURRENT GAIN
5 3
2
TC = 25°C VCE = 5.0 V
IC = 20 A
TC = 25°C
2 3 5 7 10
Figure 3. Collector–Emitter Saturation Voltage
3051 2 3 7 10 5020 305
TC = 25°C IC/IB = 10
V
BE
, BASE–EMITTER VOLTAGE (VOLTS)
1.0
Figure 4. Base–Emitter Voltage
t, TIME (ms)
1
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
0.05 1 2 5 10 20 50 100 200 500
R
θ
JC
(t) = r(t) R
θ
JC
R
θ
JC
(t) = 1.17
°
C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t
1
T
J(pk)
– TC = P
(pk)
R
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02 0.1 0.50.2
RESISTANCE (NORMALIZED)
1000
Figure 5. Thermal Response
0.03
0.3
3 30 300
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