Motorola BUS98A, BUS98 Datasheet

Motorola Bipolar Power Transistor Device Data

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The BUS98 and BUS98A transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications such as:

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

Fast Turn–Off Times

60 ns Inductive Fall Time –25_C (Typ) 120 ns Inductive Crossover Time –25_C (Typ)

Operating Temperature Range –65 to +200_C 100_C Performance Specified for:

Reverse–Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents (125_C)

MAXIMUM RATINGS

Rating

Symbol

BUS98

BUS98A

ÎÎÎÎ

Unit

Collector–Emitter Voltage

CEO(sus)

400

450

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

CEV

850

1000

ÎÎÎÎ

Vdc

Emitter Base Voltage

ÎÎÎÎ

Vdc

Collector Current — Continuous

— Peak (1) — Overload

30 60

120

ÎÎÎÎ

Adc

Base Current — Continuous

— Peak (1)

10 30

ÎÎÎÎ

Adc

Total Power Dissipation — TC = 25_C

— TC = 100_C

Derate above 25_C

250 142

1.42

ÎÎÎÎ

Watts

W/_C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–65 to +200

ÎÎÎÎ

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

ÎÎÎÎ

Unit

Thermal Resistance,

Junction to Case

θJC

0.7

ÎÎÎÎ

C/W

Maximum Lead Temperature

for Soldering Purposes: 1/8″ from Case for 5 Seconds

275

ÎÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle x10%. Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUS98/D

 Motorola, Inc. 1995

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30 AMPERES NPN SILICON

POWER TRANSISTORS

400 AND 450 VOLTS

(BVCEO)

250 WATTS

850–1000 V (BVCES)

CASE 1–07

TO–204AA

REV 7

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Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS (1)

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 200 mA, IB = 0) L = 25 mH BUS98

BUS98A

CEO(sus)

400 450

— —

ÎÎÎ

Vdc

Collector Cutoff Current

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc)

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc, TC = 125_C)

CEV

— —

0.4

4.0

ÎÎÎ

mAdc

Collector Cutoff Current

(VCE = Rated V

CEV

, RBE = 10 Ω) TC = 25 _C

TC = 125 _C

CER

— —

1.0

6.0

ÎÎÎ

mAdc

Emitter Cutoff Current

(VEB = 7 Vdc, IC = 0)

EBO

—

0.2

ÎÎÎ

mAdc

Emitter–Base Breakdown Voltage

(IE = 100 mA – IC = 0)

EBO

7.0

—

ÎÎÎ

Vdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

S/b

See Figure 12

ÎÎÎ

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 13

ÎÎÎ

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 20 Adc, VCE = 5 Vdc) BUS98 (IC = 16 Adc, VCE = 5 V) BUS98A

—

ÎÎÎ

—

Collector–Emitter Saturation Voltage

(IC = 20 Adc, IB = 4 Adc) BUS98 (IC = 30 Adc, IB = 8 Adc) (IC = 20 Adc, IB = 4 Adc, TC = 100_C) (IC = 16 Adc, IB = 3.2 Adc) BUS98A (IC = 24 Adc, IB = 5 Adc) (IC = 16 Adc, IB = 3.2 Adc, TC = 100_C)

CE(sat)

— — — — — —

1.5

3.5

2.0

1.5

5.0

2.0

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage

(IC = 20 Adc, IB = 4 Adc) BUS98 (IC = 20 Adc, IB = 4 Adc, TC = 100_C) (IC = 16 Adc, IB = 3.2 Adc) BUS98A (IC = 16 Adc, IB = 3.2 Adc, TC = 100_C)

BE(sat)

— — — —

1.6

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

test

= 100 kHz)

—

700

ÎÎÎ

SWITCHING CHARACTERISTICS Restive Load (Table 1)

Delay Time

—

0.1

0.2

ÎÎÎ

µs

Rise Time

(VCC = 250 Vdc, IC = 20 A,

IB1 = 4.0 A, tp = 30 µs,

—

0.4

0.7

ÎÎÎ

Storage Time

IB1 = 4.0 A, tp = 30 µs,

Duty Cycle v 2%, V

BE(off)

= 5 V)

—

1.55

2.3

ÎÎÎ

Fall Time

2%, V

BE(off)

= 5 V)

(for BUS98A: IC = 16 A, Ib1 = 3.2 A)

—

0.2

0.4

ÎÎÎ

Inductive Load, Clamped (Table 1)

Storage Time

—

1.55

—

ÎÎÎ

µs

Fall Time

C(pk)

= 20 A (BUS98)

Ib1 = 4 A

(TC = 25_C)

—

0.06

—

ÎÎÎ

Storage Time

BE(off)

= 5 V,

= 250 V)

—

1.8

2.8

ÎÎÎ

Crossover Time

CE(c1)

= 250 V)

C(pk)

= 16 A (BUS98A)

—

0.3

0.6

ÎÎÎ

Fall Time

lB1 = 3.2 A)

—

0.17

0.35

ÎÎÎ

(1) Pulse Test: PW = 300 µs, Duty Cycle v 2%.

(TC = 100

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Motorola Bipolar Power Transistor Device Data

DC CHARACTERISTICS

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

3 5 7 10 20 30 50

5 3

0.1

Figure 2. Collector Saturation Region

IC, COLLECTOR CURRENT (AMPS)

0.3 1 3 10

0.7

0.5

Figure 3. Collector–Emitter Saturation Voltage

IC, COLLECTOR CURRENT (AMPS)

3 10 20

0.7

0.3

0.1

Figure 4. Base–Emitter Voltage

IB, BASE CURRENT (AMPS)

0.1

0.3 0.5 1 2 3 4

5 3

0.5

, DC CURRENT GAIN

VCE = 5 V

= 5

0.3

90%

10%

0.3

TC = 25°C

IC = 10 A

IC = 15 A

IC = 20 A

90%

10%

, BASE EMITTER VOLTAGE (VOLTS)

TJ = 25°C

TJ = 100°C

VR, REVERSE VOLTAGE (VOLTS)

10 100 1000

10k

100

–0.4

Figure 5. Collector Cutoff Region

VBE, BASE–EMITTER VOLTAGE (VOLTS)

–1

Figure 6. Capacitance

, COLLECTOR CURRENT ( A)

–0.2 0 0.2 0.4 0.6

VCE = 250 V

TJ = 150°C

125°C

100°C

75°C

25°C

REVERSE FORWARD

TJ = 25°C

C, CAPACITANCE (pF)

= 5

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