Motorola BUL45D2 Datasheet
1
Motorola Bipolar Power Transistor Device Data
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The BUL45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an hFE window.
Main features:
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic V
CE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
It’s characteristics make it also suitable for PFC application.
MAXIMUM RATINGS
Rating
Symbol
ОООООООО
ОООООООО
ОООООООО
Value
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Collector–Emitter Sustaining Voltage
V
CEO
ОООООООО
ОООООООО
ОООООООО
400
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector–Base Breakdown Voltage
V
CBO
ОООООООО
ОООООООО
ОООООООО
700
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector–Emitter Breakdown Voltage
V
CES
ОООООООО
ОООООООО
ОООООООО
700
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Emitter–Base Voltage
V
EBO
ОООООООО
ОООООООО
ОООООООО
12
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector Current — Continuous
— Peak (1)
I
C
I
CM
ОООООООО
ОООООООО
ОООООООО
ОООООООО
5
10
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Base Current — Continuous
Base Current — Peak (1)
I
B
I
BM
ОООООООО
ОООООООО
ОООООООО
2
4
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
P
D
ОООООООО
ОООООООО
ОООООООО
ОООООООО
75
0.6
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Watt
W/_C
Operating and Storage Temperature
TJ, T
stg
ОООООООО
ОООООООО
ОООООООО
–65 to 150
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
R
θJC
R
θJA
ОООООООО
ОООООООО
ОООООООО
ОООООООО
1.65
62.5
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
T
L
ОООООООО
ОООООООО
ОООООООО
ОООООООО
260
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL45D2/D
Motorola, Inc. 1995
POWER TRANSISTORS
5 AMPERES
700 VOLTS
75 WATTS
CASE 221A–06
TO–220AB
BUL45D2
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
V
CEO(sus)
400
450
Vdc
Collector–Base Breakdown Voltage
(I
CBO
= 1 mA)
V
CBO
700
910
Vdc
Emitter–Base Breakdown Voltage
(I
EBO
= 1 mA)
V
EBO
12
14.1
Vdc
Collector Cutoff Current
(VCE = Rated V
CEO
, IB = 0)
I
CEO
100
µAdc
Collector Cutoff Current (VCE = Rated V
CES
, VEB = 0)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
I
CES
100
500
100
µAdc
Emitter–Cutoff Current
(VEB = 10 Vdc, IC = 0)
I
EBO
100
µAdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
@ TC = 25°C
@ TC = 125°C
0.8
0.7
1
0.9
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.89
0.79
1
0.9
Collector–Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
@ TC = 25°C
@ TC = 125°C
0.28
0.32
0.4
0.5
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.32
0.38
0.5
0.6
(IC = 0.8 Adc, IB = 40 mAdc)
@ TC = 25°C
@ TC = 125°C
0.46
0.62
0.75
1
DC Current Gain
(IC = 0.8 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
22
20
34
29
(IC = 2 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
10
7
14
9.5
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 1 Adc)
@ TC = 25°C
@ TC = 125°C
1.04
0.7
1.5
(IEC = 2 Adc)
@ TC = 25°C
@ TC = 125°C
1.2
1.6
(IEC = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.85
0.62
1.2
Forward Recovery Time (see Figure 27)
(IF = 1 Adc, di/dt = 10 A/µs)
@ TC = 25°C
330
(IF = 2 Adc, di/dt = 10 A/µs)
@ TC = 25°C
360
(IF = 0.4 Adc, di/dt = 10 A/µs)
@ TC = 25°C
320
V
BE(sat)
Vdc
V
CE(sat)
h
FE
V
EC
T
Vdc
fr
—
V
ns
BUL45D2
3
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
ÎÎÎ
ÎÎÎ
ÎÎÎ
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
f
T
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
C
ob
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
50
75
pF
Input Capacitance
(VEB = 8 Vdc)
C
ib
ÎÎÎ
ÎÎÎ
ÎÎÎ
340
500
pF
DYNAMIC SATURATION VOLTAGE
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 1 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
3.7
9.4
V
Dynamic Saturation
Voltage:
Determined 1 µs and
IB1 = 100 mA
VCC = 300 V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 3 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.35
2.7
V
µs and
3 µs respectively after
rising IB1 reaches
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 1 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
3.9
12
V
90% of final I
B1
IB1 = 0.8 A
VCC = 300 V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 3 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.4
1.5
V
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–on Time
@ TC = 25°C
@ TC = 125°C
t
on
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
90
105
150
ns
Turn–off Time
IB2 = 1 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
t
off
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.15
1.5
1.3
µs
Turn–on Time
@ TC = 25°C
@ TC = 125°C
t
on
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
90
110
150
ns
Turn–off Time
IB2 = 0.4 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
t
off
2.1
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
3.1
2.4
µs
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
Fall Time
@ TC = 25°C
@ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
90
93
150
ns
Storage Time
IC = 1 Adc
IB1 = 100 mAdc
I
= 500 mAdc
@ TC = 25°C
@ TC = 125°C
t
s
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.72
1.05
0.9
µs
Crossover Time
IB2 = 500 mAdc
@ TC = 25°C
@ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
95
95
150
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
80
105
150
ns
Storage Time
IC = 2 Adc
IB1 = 0.4 Adc
I
= 0.4 Adc
@ TC = 25°C
@ TC = 125°C
t
s
1.95
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
2.9
2.25
µs
Crossover Time
IB2 = 0.4 Adc
@ TC = 25°C
@ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
225
450
300
ns
IC = 1 A
V
CE(dsat)
IC = 2 A
IC = 2 Adc, IB1 = 0.4 Adc
IC = 2 Adc, IB1 = 0.4 Adc
BUL45D2
4
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain @ 1 Volt
100
80
60
40
20
0
1010.10.010.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
TJ = 125°C
TJ = 25°C
TJ = –20°C
VCE = 1 V
Figure 2. DC Current Gain @ 5 Volt
100
80
60
40
20
0
1010.10.010.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
TJ = 125°C
TJ = 25°C
TJ = –20°C
VCE = 5 V
Figure 3. Collector Saturation Region
4
2
0
100.10.010.001
IB, BASE CURRENT (AMPS)
IC = 500 mA
Figure 4. Collector–Emitter Saturation Voltage
10
1
0.1
1010.10.010.001
IC, COLLECTOR CURRENT (AMPS)
TJ = 125
°
C
TJ = 25°C
TJ = –20°C
IC/IB = 5
V
CE
, VOLTAGE (VOLTS)
V
CE
, VOLTAGE (VOLTS)
3
1
TJ = 25°C
1 A
4 A
Figure 5. Collector–Emitter Saturation Voltage
10
1
0.1
100.10.010.001
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Collector–Emitter Saturation Voltage
10
1
0.1
10.10.010.001
IC, COLLECTOR CURRENT (AMPS)
TJ = 125
°
C
TJ = 25°C
TJ = –20°C
V
CE
, VOLTAGE (VOLTS)
V
CE
, VOLTAGE (VOLTS)
1
IC/IB = 10
TJ = 125°C
TJ = 25°C
TJ = –20°C
IC/IB = 20
1
5 A
3 A
2 A
10
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