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1
Motorola Bipolar Power Transistor Device Data
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The BUL45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an hFE window.
Main features:
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic V
CE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
It’s characteristics make it also suitable for PFC application.
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Collector–Emitter Sustaining Voltage
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Collector–Base Breakdown Voltage
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Collector–Emitter Breakdown Voltage
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Collector Current — Continuous
— Peak (1)
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Base Current — Continuous
Base Current — Peak (1)
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*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
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Operating and Storage Temperature
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Thermal Resistance
— Junction to Case
— Junction to Ambient
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Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
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_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL45D2/D
POWER TRANSISTORS
5 AMPERES
700 VOLTS
75 WATTS
CASE 221A–06
TO–220AB
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BUL45D2
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
Collector–Base Breakdown Voltage
(I
CBO
= 1 mA)
Emitter–Base Breakdown Voltage
(I
EBO
= 1 mA)
Collector Cutoff Current
(VCE = Rated V
CEO
, IB = 0)
Collector Cutoff Current (VCE = Rated V
CES
, VEB = 0)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
Emitter–Cutoff Current
(VEB = 10 Vdc, IC = 0)
Base–Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
(IC = 2 Adc, IB = 0.4 Adc)
Collector–Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
(IC = 2 Adc, IB = 0.4 Adc)
(IC = 0.8 Adc, IB = 40 mAdc)
DC Current Gain
(IC = 0.8 Adc, VCE = 1 Vdc)
(IC = 2 Adc, VCE = 1 Vdc)
Forward Diode Voltage
(IEC = 1 Adc)
Forward Recovery Time (see Figure 27)
(IF = 1 Adc, di/dt = 10 A/µs)
(IF = 2 Adc, di/dt = 10 A/µs)
(IF = 0.4 Adc, di/dt = 10 A/µs)
V
BE(sat)
Vdc
V
CE(sat)
h
FE
V
EC
T
Vdc
fr
—
V
ns
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BUL45D2
3
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Input Capacitance
(VEB = 8 Vdc)
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1 µs and
µs and
3 µs respectively after
rising IB1 reaches
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
IB2 = 1 Adc
VCC = 300 Vdc
IB2 = 0.4 Adc
VCC = 300 Vdc
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
IC = 1 Adc
IB1 = 100 mAdc
I
= 500 mAdc
IC = 2 Adc
IB1 = 0.4 Adc
I
= 0.4 Adc
IC = 1 A
V
CE(dsat)
IC = 2 A
IC = 2 Adc, IB1 = 0.4 Adc
IC = 2 Adc, IB1 = 0.4 Adc
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BUL45D2
4
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain @ 1 Volt
100
80
60
40
20
0
1010.10.010.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
TJ = 125°C
TJ = 25°C
TJ = –20°C
VCE = 1 V
Figure 2. DC Current Gain @ 5 Volt
100
80
60
40
20
0
1010.10.010.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
TJ = 125°C
TJ = 25°C
TJ = –20°C
VCE = 5 V
Figure 3. Collector Saturation Region
4
2
0
100.10.010.001
IB, BASE CURRENT (AMPS)
IC = 500 mA
Figure 4. Collector–Emitter Saturation Voltage
10
1
0.1
1010.10.010.001
IC, COLLECTOR CURRENT (AMPS)
TJ = 125
°
C
TJ = 25°C
TJ = –20°C
IC/IB = 5
V
CE
, VOLTAGE (VOLTS)
V
CE
, VOLTAGE (VOLTS)
3
1
TJ = 25°C
1 A
4 A
Figure 5. Collector–Emitter Saturation Voltage
10
1
0.1
100.10.010.001
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Collector–Emitter Saturation Voltage
10
1
0.1
10.10.010.001
IC, COLLECTOR CURRENT (AMPS)
TJ = 125
°
C
TJ = 25°C
TJ = –20°C
V
CE
, VOLTAGE (VOLTS)
V
CE
, VOLTAGE (VOLTS)
1
IC/IB = 10
TJ = 125°C
TJ = 25°C
TJ = –20°C
IC/IB = 20
1
5 A
3 A
2 A
10