Motorola BUL44F, BUL44 Datasheet
1
Motorola Bipolar Power Transistor Device Data
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The BUL44/BUL44F have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain h
FE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Full Characterization at 125°C
• Tight Parametric Distributions are Consistent Lot–to–Lot
• Two Package Choices: Standard TO–220 or Isolated TO–220
• BUL44F, Case 221D, is UL Recognized to 3500 V
RMS
: File #E69369
MAXIMUM RATINGS
Rating Symbol BUL44 BUL44F Unit
Collector–Emitter Sustaining Voltage V
CEO
400 Vdc
Collector–Emitter Breakdown Voltage V
CES
700 Vdc
Emitter–Base Voltage V
EBO
9.0 Vdc
Collector Current — Continuous
— Peak(1)
I
C
I
CM
2.0
5.0
Adc
Base Current — Continuous
— Peak(1)
I
B
I
BM
1.0
2.0
Adc
RMS Isolated Voltage(2) Test No. 1 Per Fig. 22a
(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 22b
TC = 25°C) Test No. 3 Per Fig. 22c
V
ISOL
—
—
—
4500
3500
1500
Volts
Total Device Dissipation (TC = 25°C)
Derate above 25°C
P
D
50
0.4
25
0.2
Watts
W/°C
Operating and Storage Temperature TJ, T
stg
– 65 to 150 °C
THERMAL CHARACTERISTICS
Rating Symbol BUL44 BUL44F Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
2.5
62.5
5.0
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) V
CEO(sus)
400 — — Vdc
Collector Cutoff Current (VCE = Rated V
CEO
, IB = 0) I
CEO
— — 100 µAdc
Collector Cutoff Current (VCE = Rated V
CES
, VEB = 0)
(TC = 125°C)
Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C)
I
CES
—
—
—
—
—
—
100
500
100
µAdc
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) I
EBO
— — 100 µAdc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (continued)
(2) Proper strike and creepage distance must be provided.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL44/D
Motorola, Inc. 1995
BUL44
BUL44F
POWER TRANSISTOR
2.0 AMPERES
700 VOLTS
40 and 100 WATTS
*Motorola Preferred Device
BUL44
CASE 221A–06
TO–220AB
BUL44F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
*
*
REV 1
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc)
(IC = 1.0 Adc, IB = 0.2 Adc)
V
BE(sat)
—
—
0.85
0.92
1.1
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
(TC = 125°C)
(IC = 1.0 Adc, IB = 0.2 Adc)
(TC = 125°C)
V
CE(sat)
—
—
—
—
0.20
0.20
0.25
0.25
0.5
0.5
0.6
0.6
Vdc
DC Current Gain
(IC = 0.2 Adc, VCE = 5.0 Vdc)
(TC = 125°C)
(IC = 0.4 Adc, VCE = 1.0 Vdc)
(TC = 125°C)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
(TC = 125°C)
(IC = 10 mAdc, VCE = 5.0 Vdc)
h
FE
14
—
12
12
8.0
7.0
10
—
32
20
20
14
13
22
34
—
—
—
—
—
—
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) f
T
— 13 — MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) C
OB
— 38 60 pF
Input Capacitance (VEB = 8.0 V) C
IB
— 380 600 pF
1.0 µs
(TC = 125°C)
—
—
2.5
2.7
—
—
IB1 = 40 mAdc
VCC = 300 V)
3.0 µs
(TC = 125°C)
—
—
1.3
1.15
—
—
3.0 µs respectively after
rising IB1 reaches 90% of
final I
1.0 µs
(TC = 125°C)
V
CE(dsat)
—
—
3.2
7.5
—
—
Vdc
final I
B1
IB1 = 0.2 Adc
VCC = 300 V)
3.0 µs
(TC = 125°C)
—
—
1.25
1.6
—
—
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–On Time
(IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 0.2 Adc, VCC = 300 V) (TC = 125°C)
t
on
—
—
40
40
100
—
ns
Turn–Off Time
(IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 0.2 Adc, VCC = 300 V) (TC = 125°C)
t
off
—
—
1.5
2.0
2.5
—
µs
Turn–On Time (IC = 1.0 Adc, IB1 = 0.2 Adc
IB1 = 0.5 Adc, VCC = 300 V) (TC = 125°C)
t
on
—
—
85
85
150
—
ns
Turn–Off Time (IC = 1.0 Adc, IB1 = 0.2 Adc
IB2 = 0.5 Adc, VCC = 300 V) (TC = 125°C)
t
off
—
—
1.75
2.10
2.5
—
µs
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
Fall Time (IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 0.2 Adc) (TC = 125°C)
t
fi
—
—
125
120
200
—
ns
Storage Time
(TC = 125°C)
t
si
—
—
0.7
0.8
1.25
—
µs
Crossover Time
(TC = 125°C)
t
c
—
—
110
110
200
—
ns
Fall Time (IC = 1.0 Adc, IB1 = 0.2 Adc
IB2 = 0.5 Adc) (TC = 125°C)
t
fi
—
—
110
120
175
—
ns
Storage Time
(TC = 125°C)
t
si
—
—
1.7
2.25
2.75
—
µs
Crossover Time
(TC = 125°C)
t
c
—
—
180
210
300
—
ns
Fall Time (IC = 0.8 Adc, IB1 = 160 mAdc
IB2 = 160 mAdc) (TC = 125°C)
t
fi
70
—
—
180
170
—
ns
Storage Time
(TC = 125°C)
t
si
2.6
—
—
4.2
3.8
—
µs
Crossover Time
(TC = 125°C)
t
c
—
—
190
350
300
—
ns
Dynamic Saturation Voltage:
Determined 1.0 µs and
(IC = 0.4 Adc
(IC = 1.0 Adc
3
Motorola Bipolar Power Transistor Device Data
r
2.0
IB, BASE CURRENT (mA)
0
1000100101.0
1.0
10
IC, COLLECTOR CURRENT (AMPS)
0.01
101.00.10.01
1.0
0.1
TYPICAL STATIC CHARACTERISTICS
100
IC, COLLECTOR CURRENT (AMPS)
1.0
101.00.10.01
10
1.0 10 100
1.0
10
100
1000
C, CAPACITANCE (pF)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
10
1.00.10.01
1.2
0.4
0.9
0.7
0.5
0.6
0.8
1.1
1.0
h
FE
, DC CURRENT GAIN
VCE = 1 V
TJ = 125°C
TJ = 25°C
100
IC, COLLECTOR CURRENT (AMPS)
1.0
101.00.10.01
10
h
FE
, DC CURRENT GAIN
VCE = 5 V
TJ = 125°C
TJ = 25°C
TJ = –20°C
V
CE
, VOLTAGE (VOLTS)
TJ = 25°C
IC = 0.2 A
0.4 A
1 A
1.5 A
2 A
IC/IB = 10
IC/IB = 5
V
CE
, VOLTAGE (VOLTS)
TJ = 25°C
TJ = 125°C
V
BE
, VOLTAGE (VOLTS)
IC/IB = 5
IC/IB = 10
Figure 1. DC Current Gain at 1 Volt Figure 2. DC Current Gain at 5 Volts
Figure 3. Collector Saturation Region Figure 4. Collector–Emitter Saturation Voltage
Figure 5. Base–Emitter Saturation Region Figure 6. Capacitance
C
IB
C
OB
TJ = 25°C
f = 1 MHz
TJ = 25°C
TJ = 125
°
C
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