Motorola BUL43B Datasheet
1
Motorola Bipolar Power Transistor Device Data
The BUL43B has an application specific state–of–the–art die designed for use in
220 V l ine operated Switchmode Power supplies and electronic b allast (“light
ballast”). The main advantages brought by this new transistor are:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain h
FE
— Fast and Tightened Switching Distributions
— No Coil Required in Base Circuit for Fast Turn–Off (no current tail)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
V
CEO
350
Vdc
Collector–Base Breakdown Voltage
V
CBO
650
Vdc
Collector–Emitter Breakdown Voltage
V
CES
650
Vdc
Emitter–Base Voltage
V
EBO
9
Vdc
Collector Current — Continuous
— Peak (1)
I
C
I
CM
2
4
Adc
Base Current — Continuous
Base Current — Peak (1)
I
B
I
BM
1
2
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
P
D
40
0.32
Watt
W/_C
Operating and Storage Temperature
TJ, T
stg
–65 to 150
_
C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
R
θJC
R
θJA
3.125
62.5
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
T
L
260
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL43B/D
Motorola, Inc. 1995
POWER TRANSISTORS
2 AMPERES
700 VOLTS
40 WATTS
CASE 221A–06
TO–220AB
BUL43B
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
V
CEO(sus)
350
Vdc
Collector Cutoff Current
(VCE = Rated V
CEO
, IB = 0)
I
CEO
100
µAdc
Collector Cutoff Current
(VCE = Rated V
CES
, VEB = 0)
@ TC = 25°C
@ TC = 125°C
I
CES
10
200
µAdc
Emitter–Cutoff Current
(VEB = 9 Vdc, IC = 0)
I
EBO
100
µAdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 2 Adc, IB = 0.5 Adc)
V
BE(sat)
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 2 Adc, IB = 0.5 Adc)
@ TC = 25°C
V
CE(sat)
1
Vdc
DC Current Gain
(IC = 1 Adc, VCE = 2 Vdc)
@ TC = 25°C
8
—
(IC = 2 Adc, VCE = 5 Vdc)
@ TC = 25°C
6
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
f
T
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
C
ob
40
pF
Input Capacitance
(VEB = 8 V)
C
ib
400
pF
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–off Time
IC = 1.2 Adc, IB1 = 0.4 Adc
IB2 = 0.1 Adc
VCC = 300 Vdc
@ TC = 25°C
t
off
4.7
5.8
µs
Fall Time
IC = 2.5 Adc, IB1 = 0.5 Adc
IB2 = 0.5 Adc
VCC = 150 Vdc
@ TC = 25°C
t
f
800
ns
h
FE
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