Motorola BUL147F, BUL147 Datasheet
3–1
Motorola Bipolar Power Transistor Device Data
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The BUL147/BUL147F have an applications specific state–of–the–art die designed
for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power
supplies for a ll types of electronic e quipment. These h igh–voltage/high–speed
transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Parametric Distributions are Tight and Consistent Lot–to–Lot
• Two Package Choices: Standard TO–220 or Isolated TO–220
• BUL147F, Isolated Case 221D, is UL Recognized to 3500 V
RMS
: File #E69369
MAXIMUM RATINGS
Rating Symbol BUL147 BUL147F Unit
Collector–Emitter Sustaining Voltage V
CEO
400 Vdc
Collector–Emitter Breakdown Voltage V
CES
700 Vdc
Emitter–Base Voltage V
EBO
9.0 Vdc
Collector Current — Continuous
— Peak(1)
I
C
I
CM
8.0
16
Adc
Base Current — Continuous
— Peak(1)
I
B
I
BM
4.0
8.0
Adc
RMS Isolated Voltage(2) Test No. 1 Per Fig. 22a
(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 22b
TC = 25°C) Test No. 3 Per Fig. 22c
V
ISOL
—
—
—
4500
3500
1500
Volts
Total Device Dissipation (TC = 25°C)
Derate above 25°C
P
D
125
1.0
45
0.36
Watts
W/°C
Operating and Storage Temperature TJ, T
stg
– 65 to 150 °C
THERMAL CHARACTERISTICS
Rating Symbol BUL44 BUL44F Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
1.0
62.5
2.78
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) V
CEO(sus)
400 — — Vdc
Collector Cutoff Current (VCE = Rated V
CEO
, IB = 0) I
CEO
— — 100 µAdc
Collector Cutoff Current (VCE = Rated V
CES
, VEB = 0)
(TC = 125°C)
Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C)
I
CES
—
—
—
—
—
—
100
500
100
µAdc
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) I
EBO
— — 100 µAdc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (continued)
(2) Proper strike and creepage distance must be provided.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL147/D
Motorola, Inc. 1995
BUL147
BUL147F
POWER TRANSISTOR
8.0 AMPERES
700 VOLTS
45 and 125 WATTS
*Motorola Preferred Device
BUL147
CASE 221A–06
TO–220AB
BUL147F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
*
*
REV 1
3–2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)
Base–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc)
V
BE(sat)
—
—
0.82
0.92
1.1
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.2 Adc)
(TC = 125°C)
(IC = 4.5 Adc, IB = 0.9 Adc)
(TC = 125°C)
V
CE(sat)
—
—
—
—
0.25
0.3
0.35
0.35
0.5
0.5
0.7
0.8
Vdc
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
(TC = 125°C)
DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc)
(TC = 125°C)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (TC = 25°C to 125°C)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
h
FE
14
—
8.0
7.0
10
10
—
30
12
11
18
20
34
—
—
—
—
—
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) f
T
— 14 — MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) C
ob
— 100 175 pF
Input Capacitance (VEB = 8.0 V) C
ib
— 1750 2500 pF
1.0 µs
(TC = 125°C)
—
—
3.0
5.5
—
—
Dynamic Saturation Voltage:
Determined 1.0 µs and
3.0 µs respectively after
IB1 = 200 mAdc
VCC = 300 V)
3.0 µs
(TC = 125°C)
—
—
0.8
1.4
—
—
3.0 µs respectively after
rising IB1 reaches 90% of
final I
B1
1.0 µs
(TC = 125°C)
V
CE(dsat)
—
—
3.3
8.5
—
—
Volts
(see Figure 18)
IB1 = 0.9 Adc
VCC = 300 V)
3.0 µs
(TC = 125°C)
—
—
0.4
1.0
—
—
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–On Time
(IC = 2.0 Adc, IB1 = 0.2 Adc
IB2 = 1.0 Adc, VCC = 300 V) (TC = 125°C)
t
on
—
—
200
190
350
—
ns
Turn–Off Time
(TC = 125°C)
t
off
—
—
1.0
1.6
2.5
—
µs
Turn–On Time (IC = 4.5 Adc, IB1 = 0.9 Adc
IB1 = 2.25 Adc, VCC = 300 V) (TC = 125°C)
t
on
—
—
85
100
150
—
ns
Turn–Off Time
(TC = 125°C)
t
off
—
—
1.5
2.0
2.5
—
µs
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
Fall Time (IC = 2.0 Adc, IB1 = 0.2 Adc
IB2 = 1.0 Adc) (TC = 125°C)
t
fi
—
—
100
120
180
—
ns
Storage Time
(TC = 125°C)
t
si
—
—
1.3
1.9
2.5
—
µs
Crossover Time
(TC = 125°C)
t
c
—
—
210
230
350
—
ns
Fall Time (IC = 4.5 Adc, IB1 = 0.9 Adc
IB2 = 2.25 Adc) (TC = 125°C)
t
fi
—
—
80
100
150
—
ns
Storage Time
(TC = 125°C)
t
si
—
—
1.6
2.1
3.2
—
µs
Crossover Time
(TC = 125°C)
t
c
—
—
170
200
300
—
ns
Fall Time (IC = 4.5 Adc, IB1 = 0.9 Adc
IB2 = 0.9 Adc) (TC = 125°C)
t
fi
60
—
—
150
180
—
ns
Storage Time
(TC = 125°C)
t
si
2.6
—
—
4.3
3.8
—
µs
Crossover Time
(TC = 125°C)
t
c
—
—
200
330
350
—
ns
(IC = 2.0 Adc
(IC = 5.0 Adc
3–3
Motorola Bipolar Power Transistor Device Data
h
FE
, DC CURRENT GAIN
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
C, CAPACITANCE (pF)
0.01
100
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
h
FE
, DC CURRENT GAIN
Figure 2. DC Current Gain @ 5 Volts
V
CE
, VOLTAGE (VOLTS)
Figure 3. Collector Saturation Region Figure 4. Collector–Emitter Saturation Voltage
Figure 5. Base–Emitter Saturation Region Figure 6. Capacitance
10
1
1 10
100
10
1
0.01 0.1 1 10
2
0.01
IB, BASE CURRENT (AMPS)
10
1
0.01
0.01
IC COLLECTOR CURRENT (AMPS)
0.1
1.3
1
0.8
0.4
0.01
IC, COLLECTOR CURRENT (AMPS)
0.1 1 10
1000
100
1
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1 100
1
0
0.1
1 10
10000
10
0.1
0.1 1 10
10
TJ = 25°C
TJ = – 20°C
VCE = 1 V
TJ = 125°C
TJ = 25°C
TJ = – 20°C
VCE = 5 V
V
CE
, VOLTAGE (VOLTS)
IC/IB = 10
IC/IB = 5
V
BE
, VOLTAGE (VOLTS)
1.1
0.9
0.7
0.6
0.5
0.5
1.5
1.2
TJ = 25°C
IC = 1 A 3 A 5 A 8 A 10 A
TJ = 25°C
TJ = 125
°
C
TJ = 25°C
TJ = 125°C
IC/IB = 5
IC/IB = 10
C
ib
C
ob
TJ = 25°C
f = 1 MHz
TYPICAL STATIC CHARACTERISTICS
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