Motorola BUH51 Datasheet
1
Motorola Bipolar Power Transistor Device Data
The BUH51 has an application s pecific state–of–art die designed for use in
50 Watts Halogen electronic transformers.
This power transistor is specifically designed to sustain the large inrush current
during either the start–up conditions or under a short circuit across the load.
This High voltage/High speed product exhibits the following main features:
• Improved Efficiency Due to the Low Base Drive Requirements:
— High and Flat DC Current Gain h
FE
— Fast Switching
• Robustness Thanks to the Technology Developed to Manufacture
this Device
• Motorola “6 SIGMA” Philosophy Providing Tight and Reproducible
Parametric Distributions
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
V
CEO
500
Vdc
Collector–Base Breakdown Voltage
V
CBO
800
Vdc
Collector–Emitter Breakdown Voltage
V
CES
800
Vdc
Emitter–Base Voltage
V
EBO
10
Vdc
Collector Current — Continuous
— Peak (1)
I
C
I
CM
3
8
Adc
Base Current — Continuous
Base Current — Peak (1)
I
B
I
BM
2
4
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
P
D
50
0.4
Watt
W/_C
Operating and Storage Temperature
TJ, T
stg
–65 to 150
_
C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
R
θJC
R
θJA
2.5
100
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
T
L
260
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUH51/D
Motorola, Inc. 1995
POWER TRANSISTOR
3 AMPERES
800 VOLTS
50 WATTS
CASE 77–07
TO–225AA TYPE
BUH51
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
V
CEO(sus)
500
550
Vdc
Collector–Base Breakdown Voltage
(I
CBO
= 1 mA)
V
CBO
800
950
Vdc
Emitter–Base Breakdown Voltage
(I
EBO
= 1 mA)
V
EBO
10
12.5
Vdc
Collector Cutoff Current
(VCE = Rated V
CEO
, IB = 0)
I
CEO
100
µAdc
Collector Cutoff Current
(VCE = Rated V
CES
, VEB = 0)
@ TC = 25°C
@ TC = 125°C
I
CES
100
1000
µAdc
Collector Base Current
(VCB = Rated V
CBO
, VEB = 0)
@ TC = 25°C
@ TC = 125°C
I
CBO
100
1000
µAdc
Emitter–Cutoff Current
(VEB = 9 Vdc, IC = 0)
I
EBO
100
µAdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 125°C
V
BE(sat)
0.92
0.8
1.1
Vdc
Collector–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 125°C
V
CE(sat)
0.3
0.32
0.5
0.6
Vdc
DC Current Gain (IC = 1 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
8
6
10
8
—
DC Current Gain (IC = 2 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
5
4
7.5
6.2
—
DC Current Gain (IC = 0.8 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
10
8
14
13
—
DC Current Gain (IC = 10 mAdc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
14
18
20
25
—
DYNAMIC SATURATION VOLTAGE
C
= 1 Adc, IB1 = 0.2 Adc
@ TC = 25°C
1.7
V
Dynamic Saturation
Voltage:
IC = 1 Adc, IB1 = 0.2 Adc
VCC = 300 V
@ TC = 125°C
6
V
Determined 3 µs after
rising IB1 reaches
C
= 2 Adc, IB1 = 0.4 Adc
@ TC = 25°C
5.1
V
B1
reaches
90% of final I
B1
IC = 2 Adc, IB1 = 0.4 Adc
VCC = 300 V
@ TC = 125°C
15
V
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)
f
T
23
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
C
ob
34
100
pF
Input Capacitance
(VEB = 8 Vdc, f = 1 MHz)
C
ib
200
500
pF
h
FE
Dynamic Saturation
I
I
V
CE(dsat)
BUH51
3
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)
Turn–on Time
@ TC = 25°C
@ TC = 125°C
t
on
110
125
150
ns
Turn–off Time
IB2 = 0.2 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
t
off
3.5
4.1
4
µs
Turn–on Time
@ TC = 25°C
@ TC = 125°C
t
on
700
1250
1000
ns
Turn–off Time
IB2 = 0.4 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
t
off
1.75
2.1
2
µs
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
Fall Time
@ TC = 25°C
@ TC = 125°C
t
fi
200
320
300
ns
Storage Time
IC = 1 Adc
IB1 = 0.2 Adc
I
= 0.2 Adc
@ TC = 25°C
@ TC = 125°C
t
si
3.4
4
3.75
µs
Crossover Time
IB2 = 0.2 Adc
@ TC = 25°C
@ TC = 125°C
t
c
350
640
500
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
t
fi
140
300
200
ns
Storage Time
IC = 2 Adc
IB1 = 0.4 Adc
I
= 0.4 Adc
@ TC = 25°C
@ TC = 125°C
t
si
2.3
2.8
2.75
µs
Crossover Time
IB2 = 0.4 Adc
@ TC = 25°C
@ TC = 125°C
t
c
400
725
600
ns
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain @ 1 Volt
100
10
1
1010.10.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
TJ = 125°C
TJ = 25°C
TJ = –20°C
VCE = 1 V
Figure 2. DC Current Gain @ 3 Volt
100
10
1
1010.10.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
TJ = 125°C
TJ = 25°C
TJ = –20°C
VCE = 3 V
0.010.01
IC = 1 Adc, IB1 = 0.2 Adc
IC = 2 Adc, IB1 = 0.4 Adc
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