Motorola BUH50 Datasheet
1
Motorola Bipolar Power Transistor Device Data
The BUH50 has an application s pecific state–of–art die designed for use in
50 Watts HALOGEN electronic transformers and switchmode applications.
This high voltage/high speed transistor exhibits the following main feature:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain h
FE
— Fast Switching
• Motorola “6SIGMA” Philosophy Provides Tight and Reproductible
Parametric Distributions
• Specified Dynamic Saturation Data
• Full Characterization at 125°C
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
V
CEO
500
Vdc
Collector–Base Breakdown Voltage
V
CBO
800
Vdc
Collector–Emitter Breakdown Voltage
V
CES
800
Vdc
Emitter–Base Voltage
V
EBO
9
Vdc
Collector Current — Continuous
— Peak (1)
I
C
I
CM
4
8
Adc
Base Current — Continuous
Base Current — Peak (1)
I
B
I
BM
2
4
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
P
D
50
0.4
Watt
W/_C
Operating and Storage Temperature
TJ, T
stg
–65 to 150
_
C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
R
θJC
R
θJA
2.5
62.5
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
T
L
260
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUH50/D
Motorola, Inc. 1995
POWER TRANSISTOR
4 AMPERES
800 VOLTS
50 WATTS
CASE 221A–06
TO–220AB
BUH50
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
ÎÎÎ
ÎÎÎ
ÎÎÎ
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
V
CEO(sus)
500
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current
(VCE = Rated V
CEO
, IB = 0)
I
CEO
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
100
µAdc
Collector Cutoff Current @ TC = 25°C
(VCE = Rated V
CES
, VEB = 0) @ TC = 125°C
I
CES
ÎÎÎ
ÎÎÎ
ÎÎÎ
100
1000
µAdc
Emitter–Cutoff Current
(VEB = 9 Vdc, IC = 0)
I
EBO
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
100
µAdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.33 Adc)
(IC = 2 Adc, IB = 0.66 Adc) 25°C
(IC = 2 Adc, IB = 0.66 Adc) 100°C
V
BE(sat)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.86
0.94
0.85
1.2
1.6
1.5
Vdc
Collector–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.33 Adc)
@ TC = 25°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.2
0.5
(IC = 2 Adc, IB = 0.66 Adc)
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.32
0.29
0.6
0.7
(IC = 3 Adc, IB = 1 Adc)
@ TC = 25°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.5
1
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)
@ TC = 25°C
7
ÎÎÎ
ÎÎÎ
ÎÎÎ
13
—
DC Current Gain (IC = 2 Adc, VCE = 5 Vdc)
@ TC = 25°C
5
ÎÎÎ
ÎÎÎ
ÎÎÎ
10
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
f
T
4
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
C
ob
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
50
100
pF
Input Capacitance
(VEB = 8 Vdc)
C
ib
ÎÎÎ
ÎÎÎ
ÎÎÎ
850
1200
pF
DYNAMIC SATURATION VOLTAGE
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 1 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.75
5
V
Dynamic Saturation
Voltage:
Determined 1 µs and
IB1 = 0.33 A
VCC = 300 V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 3 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.3
0.5
V
µs and
3 µs respectively after
rising IB1 reaches
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 1 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
6
14
V
90% of final I
B1
IB1 = 0.66 A
VCC = 300 V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 3 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.75
4
V
V
CE(sat)
Vdc
IC = 1 A
IC = 2 A
h
FE
V
CE(dsat)
BUH50
3
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
ÎÎÎ
ÎÎÎ
ÎÎÎ
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–on Time
@ TC = 25°C
t
on
ÎÎÎ
ÎÎÎ
ÎÎÎ
95
250
ns
Turn–off Time
IB2 = 0.4 Adc
VCC = 125 Vdc
@ TC = 25°C
t
off
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
2.5
3.5
µs
Turn–on Time
@ TC = 25°C
t
on
ÎÎÎ
ÎÎÎ
ÎÎÎ
110
250
ns
Turn–off Time
IB2 = 1 Adc
VCC = 125 Vdc
@ TC = 25°C
t
off
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.95
2
µs
Turn–on Time
@ TC = 25°C
t
on
ÎÎÎ
ÎÎÎ
ÎÎÎ
100
200
ns
Turn–off Time
IB2 = 0.3 Adc
VCC = 125 Vdc
@ TC = 25°C
t
off
ÎÎÎ
ÎÎÎ
ÎÎÎ
2.9
3.5
µs
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
Fall Time
@ TC = 25°C
@ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
80
95
150
ns
Storage Time
IC = 2 Adc
IB1 = 0.4 Adc
I
= 1 Adc
@ TC = 25°C
@ TC = 125°C
t
s
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.2
1.7
2.5
µs
Crossover Time
IB2 = 1 Adc
@ TC = 25°C
@ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
150
180
300
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
90
100
150
ns
Storage Time
IC = 2 Adc
IB1 = 0.66 Adc
I
= 1 Adc
@ TC = 25°C
@ TC = 125°C
t
s
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.7
2.5
2.75
µs
Crossover Time
IB2 = 1 Adc
@ TC = 25°C
@ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
190
220
350
ns
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain @ 1 Volt
100
10
1
1010.10.01
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
TJ = 125°C
TJ = 25°C
TJ = –40°C
VCE = 1 V
Figure 2. DC Current Gain @ 5 Volt
100
10
1
1010.10.01
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
TJ = 125°C
TJ = 25°C
TJ = –40°C
VCE = 5 V
IC = 2 Adc, IB1 = 0.4 Adc
IC = 2 Adc, IB1 = 0.4 Adc
IC = 1 Adc, IB1 = 0.3 Adc
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