Motorola BUH100 Datasheet
1
Motorola Bipolar Power Transistor Device Data
The BUH100 has an application specific state–of–art die designed for use in
100 Watts Halogen electronic transformers.
This power transistor is specifically designed to sustain the large inrush current
during either the start–up conditions or under a short circuit across the load.
This High voltage/High speed product exhibits the following main features:
• Improved Efficiency Due to the Low Base Drive Requirements:
— High and Flat DC Current Gain h
FE
— Fast Switching
• Robustness Thanks to the Technology Developed to Manufacture
this Device
• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible
Parametric Distributions
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
V
CEO
400
Vdc
Collector–Base Breakdown Voltage
V
CBO
700
Vdc
Collector–Emitter Breakdown Voltage
V
CES
700
Vdc
Emitter–Base Voltage
V
EBO
10
Vdc
Collector Current — Continuous
— Peak (1)
I
C
I
CM
10
20
Adc
Base Current — Continuous
Base Current — Peak (1)
I
B
I
BM
4
10
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
P
D
100
0.8
Watt
W/_C
Operating and Storage Temperature
TJ, T
stg
–65 to 150
_
C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
R
θJC
R
θJA
1.25
62.5
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
T
L
260
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUH100/D
Motorola, Inc. 1995
POWER TRANSISTOR
10 AMPERES
700 VOLTS
100 WATTS
CASE 221A–06
TO–220AB
BUH100
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
V
CEO(sus)
400
460
Vdc
Collector–Base Breakdown Voltage
(I
CBO
= 1 mA)
V
CBO
700
860
Vdc
Emitter–Base Breakdown Voltage
(I
EBO
= 1 mA)
V
EBO
10
12.5
Vdc
Collector Cutoff Current
(VCE = Rated V
CEO
, IB = 0)
I
CEO
100
µAdc
Collector Cutoff Current
(VCE = Rated V
CES
, VEB = 0)
@ TC = 25°C
@ TC = 125°C
I
CES
100
1000
µAdc
Collector Base Current
(VCB = Rated V
CBO
, VEB = 0)
@ TC = 25°C
@ TC = 125°C
I
CBO
100
1000
µAdc
Emitter–Cutoff Current
(VEB = 9 Vdc, IC = 0)
I
EBO
100
µAdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 5 Adc, IB = 1 Adc)
@ TC = 25°C
V
BE(sat)
1
1.1
Vdc
Collector–Emitter Saturation Voltage
(IC = 5 Adc, IB = 1 Adc)
@ TC = 25°C
@ TC = 125°C
0.37
0.37
0.6
0.6
Vdc
(IC = 7 Adc, IB = 1.5 Adc)
@ TC = 25°C
@ TC = 125°C
0.5
0.6
0.75
1.5
Vdc
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
15
16
24
28
—
DC Current Gain (IC = 5 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
10
10
15
14.5
—
DC Current Gain (IC = 7 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
8
7
12
10.5
—
DC Current Gain (IC = 10 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
6
4
9.5
8
—
DYNAMIC SATURATION VOLTAGE
C
= 5 Adc, IB1 = 1 Adc
@ TC = 25°C
1.1
V
Voltage:
Determined 3 µs after
IC = 5 Adc, IB1 = 1 Adc
VCC = 300 V
@ TC = 125°C
2.1
V
µs after
rising IB1 reaches
C
= 7.5 Adc, IB1 = 1.5 Adc
@ TC = 25°C
1.7
V
90% of final I
B1
(See Figure 19)
IC = 7.5 Adc, IB1 = 1.5 Adc
VCC = 300 V
@ TC = 125°C
5
V
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)
f
T
23
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
C
ob
100
150
pF
Input Capacitance
(VEB = 8 Vdc, f = 1 MHz)
C
ib
1300
1750
pF
V
CE(sat)
h
FE
Dynamic Saturation
I
I
V
CE(dsat)
BUH100
3
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)
Turn–on Time
@ TC = 25°C
@ TC = 125°C
t
on
130
140
200
ns
Turn–off Time
IB2 = 0.2 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
t
off
6.8
8.5
8
µs
Turn–on Time
@ TC = 25°C
@ TC = 125°C
t
on
140
150
200
ns
Turn–off Time
IB2 = 0.4 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
t
off
3.4
4.3
4
µs
Turn–on Time
@ TC = 25°C
@ TC = 125°C
t
on
250
800
500
ns
Turn–off Time
IB2 = 1 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
t
off
2.9
3.6
3.5
µs
Turn–on Time
@ TC = 25°C
@ TC = 125°C
t
on
500
900
700
ns
Turn–off Time
IB2 = 1.5 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
t
off
2.1
2.5
2.5
µs
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
Fall Time
@ TC = 25°C
@ TC = 125°C
t
fi
150
180
250
ns
Storage Time
IC = 1 Adc
IB1 = 0.2 Adc
I
= 0.2 Adc
@ TC = 25°C
@ TC = 125°C
t
si
5.1
5.8
6
µs
Crossover Time
IB2 = 0.2 Adc
@ TC = 25°C
@ TC = 125°C
t
c
230
300
325
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
t
fi
150
170
250
ns
Storage Time
IC = 1 Adc
IB1 = 0.2 Adc
I
= 0.5 Adc
@ TC = 25°C
@ TC = 125°C
t
si
2.5
2.8
3
µs
Crossover Time
IB2 = 0.5 Adc
@ TC = 25°C
@ TC = 125°C
t
c
260
300
350
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
t
fi
100
140
150
ns
Storage Time
IC = 5 Adc
IB1 = 1 Adc
I
= 1 Adc
@ TC = 25°C
@ TC = 125°C
t
si
2.9
4.6
3.5
µs
Crossover Time
IB2 = 1 Adc
@ TC = 25°C
@ TC = 125°C
t
c
220
450
300
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
t
fi
100
150
150
ns
Storage Time
IC = 7.5 Adc
IB1 = 1.5 Adc
I
= 1.5 Adc
@ TC = 25°C
@ TC = 125°C
t
si
2
2.5
2.5
µs
Crossover Time
IB2 = 1.5 Adc
@ TC = 25°C
@ TC = 125°C
t
c
250
475
350
ns
IC = 1 Adc, IB1 = 0.2 Adc
IC = 1 Adc, IB1 = 0.2 Adc
IC = 5 Adc, IB1 = 1 Adc
IC = 7.5 Adc, IB1 = 1.5 Adc
Loading...