Motorola BUD44D2 Datasheet
1
Motorola Bipolar Power Transistor Device Data
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The BUD44D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an hFE window.
Main features:
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic V
CE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
It’s characteristics make it also suitable for PFC application.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
V
CEO
400
Vdc
Collector–Base Breakdown Voltage
V
CBO
700
Vdc
Collector–Emitter Breakdown Voltage
V
CES
700
Vdc
Emitter–Base Voltage
V
EBO
12
Vdc
Collector Current — Continuous
— Peak (1)
I
C
I
CM
2
5
Adc
Base Current — Continuous
Base Current — Peak (1)
I
B
I
BM
1
2
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
P
D
25
0.2
Watt
W/_C
Operating and Storage Temperature
TJ, T
stg
–65 to 150
_
C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
R
θJC
R
θJA
5
71.4
_
C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from case for 5 seconds
T
L
260
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUD44D2/D
Motorola, Inc. 1995
CASE 369–07
POWER TRANSISTORS
2 AMPERES
700 VOLTS
25 WATTS
CASE 369A–13
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
6.7
0.265
1.6
0.063
2.3
0.090
2.3
0.090
1.6
0.063
30
0.118
1.8
.070
″
6.7
0.265
″
BUD44D2
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
V
CEO(sus)
400
470
Vdc
Collector–Base Breakdown Voltage
(I
CBO
= 1 mA)
V
CBO
700
920
Vdc
Emitter–Base Breakdown Voltage
(I
EBO
= 1 mA)
V
EBO
12
14.5
Vdc
Collector Cutoff Current
(VCE = Rated V
CEO
, IB = 0)
@ TC = 25°C
@ TC = 125°C
I
CEO
50
500
µAdc
Collector Cutoff Current (VCE = Rated V
CES
, VEB = 0)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
I
CES
50
500
100
µAdc
Emitter–Cutoff Current
(VEB = 10 Vdc, IC = 0)
I
EBO
100
µAdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
@ TC = 25°C
@ TC = 125°C
0.78
0.65
0.9
0.8
(IC = 1 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 125°C
0.87
0.76
1
0.9
Collector–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 20 mAdc)
@ TC = 25°C
@ TC = 125°C
0.45
0.67
0.65
1
(IC = 0.4 Adc, IB = 40 mAdc)
@ TC = 25°C
@ TC = 125°C
0.25
0.27
0.4
0.5
(IC = 1 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 125°C
0.28
0.35
0.5
0.6
DC Current Gain
(IC = 0.4 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
20
18
32
26
(IC = 1 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
10
7
14
9.5
(IC = 2 Adc, VCE = 5 Vdc)
@ TC = 25°C
8
11
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 0.2 Adc)
@ TC = 25°C
0.8
1
(IEC = 0.2 Adc)
@ TC = 125°C
0.6
(IEC = 0.4 Adc)
@ TC = 25°C
0.9
1.2
(IEC = 1 Adc)
@ TC = 25°C
1.1
1.5
Forward Recovery Time (see Figure 22 bis)
(IF = 0.2 Adc, di/dt = 10 A/µs)
@ TC = 25°C
415
(IF = 0.4 Adc, di/dt = 10 A/µs)
@ TC = 25°C
390
(IF = 1 Adc, di/dt = 10 A/µs)
@ TC = 25°C
340
V
BE(sat)
Vdc
V
CE(sat)
h
FE
V
EC
T
Vdc
fr
—
V
ns
BUD44D2
3
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
ÎÎÎ
ÎÎÎ
ÎÎÎ
Typ
Max
Unit
DYNAMIC SATURATION VOLTAGE
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 1 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
3.3
6.8
Dynamic Saturation
Voltage:
Determined 1 µs and
IB1 = 40 mA
VCC = 300 V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 3 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.5
1.3
µs and
3 µs respectively after
rising IB1 reaches
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 1 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
4.4
12.8
90% of final I
B1
IB1 = 0.2 A
VCC = 300 V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 3 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.5
1.8
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
f
T
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
C
ob
ÎÎÎ
ÎÎÎ
ÎÎÎ
50
75
pF
Input Capacitance
(VEB = 8 Vdc)
C
ib
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
240
500
pF
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)
Turn–on Time
@ TC = 25°C
@ TC = 125°C
t
on
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
90
105
150
ns
Turn–off Time
IB2 = 0.5 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
t
off
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.1
1.5
1.25
µs
Turn–on Time
@ TC = 25°C
@ TC = 125°C
t
on
400
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
600
600
ns
Turn–off Time
IB2 = 250 mAdc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
t
off
750
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1300
1000
ns
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
Fall Time
@ TC = 25°C
@ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
110
105
150
ns
Storage Time
IC = 0.4 Adc
IB1 = 40 mAdc
I
= 0.2 Adc
@ TC = 25°C
@ TC = 125°C
t
s
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.55
0.7
0.75
µs
Crossover Time
IB2 = 0.2 Adc
@ TC = 25°C
@ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
85
80
150
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
100
90
150
ns
Storage Time
IC = 1 Adc
IB1 = 0.2 Adc
I
= 0.5 Adc
@ TC = 25°C
@ TC = 125°C
t
s
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.05
1.45
1.5
µs
Crossover Time
IB2 = 0.5 Adc
@ TC = 25°C
@ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
100
100
175
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
110
180
150
ns
Storage Time
IC = 0.8 Adc
IB1 = 160 mAdc
I
= 160 mAdc
@ TC = 25°C
@ TC = 125°C
t
s
2.05
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
2.8
2.35
µs
Crossover Time
IB2 = 160 mAdc
@ TC = 25°C
@ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
180
400
300
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
150
175
225
ns
Storage Time
IC = 0.4 Adc
IB1 = 40 mAdc
I
= 40 mAdc
@ TC = 25°C
@ TC = 125°C
t
s
1.65
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
2.2
1.95
µs
Crossover Time
IB2 = 40 mAdc
@ TC = 25°C
@ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
150
330
250
ns
IC = 0.4 A
V
CE(dsat)
IC = 1 A
IC = 1 Adc, IB1 = 0.2 Adc
IC = 0.5 Adc, IB1 = 50 mAdc
V
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