Motorola BU806 Datasheet
1
Motorola Bipolar Power Transistor Device Data
This Darlington transistor is a high voltage, high speed device for use in horizontal
deflection circuits in TV’s and CRT’s.
• High Voltage: V
CEV
= 330 or 400 V
• Fast Switching Speed:
tc = 1.0 µs (max)
• Low Saturation Voltage:
V
CE(sat)
= 1.5 V (max)
• Packaged in JEDEC TO–220AB
• Damper Diode VF is specified.
VF = 2.0 V (max)
MAXIMUM RATINGS
Rating
Symbol
BU806
Unit
Collector–Emitter Voltage
V
CEO
200
Vdc
Collector–Emitter Voltage
V
CEV
400
Vdc
Collector–Base Voltage
V
CBO
400
Vdc
Emitter–Base Voltage
V
EBO
6.0
Vdc
Collector Current — Continuous
— Peak
I
C
8.0
15
Adc
Emitter–Collector Diode Current
I
F
10
Adc
Base Current
I
B
2.0
Adc
Total Device Dissipation, TC = 25°C
Derate above TC = 25_C
P
D
60
0.48
Watts
W/_C
Operating and Storage Junction Temperature Range
TJ, T
stg
–65 to 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
2.08
_
C/W
Thermal Resistance, Junction to Ambient
R
θJA
70
_
C/W
Lead Temperature for Soldering Purposes,
1/8″ from Case for 5.0 Seconds
T
L
275
_
C
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BU806/D
Motorola, Inc. 1995
8.0 AMPERE
DARLINGTON
NPN POWER
TRANSISTORS
60 WATTS
200 VOLTS
CASE 221A–06
TO–220AB
REV 1
BU806
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
V
CEO(sus)
200
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current
(VCE = Rated V
CBO
, VBE = 0)
I
CES
—
—
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Collector Cutoff Current
(VCE = Rated V
CEV
, V
BE(off)
= 6.0 Vdc)
I
CEV
—
—
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
I
EBO
—
—
3.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 50 mAdc)
V
CE(sat)
—
—
1.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 50 mAdc)
V
BE(sat)
—
—
2.4
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Emitter–Collector Diode Forward Voltage
(IF = 4.0 Adc)
V
F
—
—
2.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
SWITCHING CHARACTERISTICS
Turn–On Time
t
on
—
0.35
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Storage Time
(Resistive Load, VCC = 100 Vdc,
IC = 5.0 Adc, IB1 = 50 mAdc,
t
s
—
0.55
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Fall Time
IB2 = 500 mAdc)
t
f
—
0.20
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Crossover Time
(IC = 5.0 Adc, IB1 = 50 mAdc, V
BE(off)
= 4.0 Vdc,
V
clamp
= 200 Vdc, L = 500 µH)
t
c
—
0.40
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 1%.
600
0.2
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
30
0.3 0.5 0.7 1.0 5.0 7.0 10
200
80
60
40
300
100
h
FE
, DC CURRENT GAIN
2.0 3.0
400
VCE = 5.0 V
TJ = 25
°
C
20
3.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
1.0
0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I
C
, COLLECTOR CURRENT (AMPS)
dc
10 µs
10
5.0 ms
1.0 ms
100 200 300
0.1
60
TC = 25°C
Figure 2. Safe Operating Area (FBSOA)
non–repetitive
50 ms
BU806
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