Motorola BU522B Datasheet
1
Motorola Bipolar Power Transistor Device Data
Power Transistor mainly intended for use as ignition circuit output transistor.
• Specified minimum sustaining voltage:
V
CER(sus)
= 425 V at IC = 1 A
• High S.O.A. capability:
VCE = 400 V
• Low V
CE(sat)
= 2.0 V max. at IC = 4 A
MAXIMUM RATINGS
Rating
Symbol
BU522B
Unit
Collector–Emitter Voltage Sust.
V
CER(sus)
425
Vdc
Collector–Emitter Voltage
V
CER
450
Vdc
Collector–Base Voltage
V
CBO
475
Vdc
Emitter–Base Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
7.0
Adc
Base Current
I
B
2.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
P
D
75
0.60
Watts
W/_C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–65 to 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max.
Unit
Thermal Resistance, Junction to Case
θ
JC
1.67
_
C/W
100
75
50
25
0
40 60 120 140 160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (W)
0 20 80 100
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BU522B/D
Motorola, Inc. 1995
7 AMPERES
DARLINGTON
POWER TRANSISTORS
NPN SILICON
450 VOLTS
75 WATTS
CASE 221A–06
TO–220AB
REV 7
BU522B
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (See Figure 2)
(IC = 1.0 A) See Figure 2
V
CER(sus)
425
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current
(Rated V
CER
, RBE = 270 Ω)
I
CER
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Collector Cutoff Current
(Rated V
CBO
, IE = 0)
I
CBO
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
I
EBO
40
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 2.5 Adc, VCE = 5 Vdc)
h
FE
250
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
Collector–Emitter Saturation Voltage
(IC = 4 Adc, IB = 80 mAdc)
V
CE(sat)
2
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage
(IC = 4 Adc, IB = 80 mAdc)
V
BE(sat)
2.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 0.3 mAdc, VCE = 5.0 Vdc, f
test
= 10 MHz)
f
T
7.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
C
ob
150
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
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