Motorola BU406, BU407 Datasheet
1
Motorola Bipolar Power Transistor Device Data
These devices are high voltage, high speed transistors for horizontal deflection
output stages of TV’s and CRT’s.
• High Voltage: V
CEV
= 330 or 400 V
• Fast Switching Speed: tf = 750 ns (max)
• Low Saturation Voltage: V
CE(sat)
= 1 V (max) @ 5 A
• Packaged in Compact JEDEC TO–220AB
MAXIMUM RATINGS
Rating
Symbol
BU406
BU407
Unit
Collector–Emitter Voltage
V
CEO
200
150
Vdc
Collector–Emitter Voltage
V
CEV
400
330
Vdc
Collector–Base Voltage
V
CBO
400
330
Vdc
Emitter Base Voltage
V
EBO
6
Vdc
Collector Current — Continuous
Peak Repetitive
Peak (10 ms)
I
C
7
10
15
Adc
Base Current
I
B
4
Adc
Total Device Dissipation, TC = 25_C
Derate above TC = 25_C
P
D
60
0.48
Watts
W/_C
Operating and Storage
Junction Temperature Range
TJ, T
stg
–65 to 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
2.08
_
C/W
Thermal Resistance, Junction to Ambient
R
θJA
70
_
C/W
Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
T
L
275
_
C
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(1)
BU406
(IC = 100 mAdc, IB = 0) BU407
V
CEO(sus)
200
150
—
—
—
—
Vdc
Collector Cutoff Current
(VCE = Rated V
CEV
, VBE = 0)
(VCE = Rated V
CEO
+ 50 Vdc, VBE = 0)
(VCE = Rated V
CEO
+ 50 Vdc, VBE = 0, TC = 150_C)
I
CES
—
—
—
—
—
—
5
0.1
1
mAdc
Emitter Cutoff Current BU406, BU407
(VEB = 6 Vdc, IC = 0)
I
EBO
—
—
1
mAdc
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc)
V
CE(sat)
—
—
1
Vdc
Base–Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc)
V
BE(sat)
—
—
1.2
Vdc
Forward Diode Voltage (IEC = 5 Adc) “D” only
V
EC
—
—
2
Volts
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 1%. (continued)
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BU406/D
Motorola, Inc. 1995
7 AMPERES
NPN SILICON
POWER TRANSISTORS
60 WATTS
150 and 200 VOLTS
CASE 221A–06
TO–220AB
REV 2
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f
test
= 20 MHz)
f
T
10
—
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
C
ob
—
80
—
pF
SWITCHING CHARACTERISTICS
Inductive Load Crossover Time
(VCC = 40 Vdc, IC = 5 Adc,
IB1 = IB2 = 0.5 Adc, L = 150 µH)
t
c
—
—
0.75
µs
100
0.1
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
10
0.2 0.3 0.5 0.7 1 5 7 10
50
20
70
30
h
FE
, DC CURRENT GAIN
TJ = 100°C
25°C
2 3
VCE = 5 V
10
2
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1
7 20
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I
C
, COLLECTOR CURRENT (AMP)
3 5 30 50 70 200
0.1
10
TC = 25°C
Figure 2. Maximum Rated Forward
Bias Safe Operating Area
100
BU407
BU406
dc
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