Motorola BU323Z Datasheet

1

Motorola Bipolar Power Transistor Device Data

 

   

High Voltage Autoprotected

The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in
active zener clamping circuit. This device is specifically designed for unclamped,
inductive applications such as Electronic Ignition, Switching Regulators and Motor
Control, and exhibit the following main features:

• Integrated High–Voltage Active Clamp

• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed

Over the –40°C to +125°C Temperature Range

• Clamping Energy Capability 100% Tested in a Live

Ignition Circuit

• High DC Current Gain/Low Saturation Voltages

Specified Over Full Temperature Range

• Design Guarantees Operation in SOA at All Times

• Offered in Plastic SOT–93/TO–218 Type or

TO–220 Packages

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

ОООООООО

ОООООООО

Value

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Collector–Emitter Sustaining Voltage

V

CEO

ОООООООО

ОООООООО

ОООООООО

350

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

V

EBO

ОООООООО

ОООООООО

ОООООООО

6.0

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector Current — Continuous

— Peak

I

C

I

CM

ОООООООО

ОООООООО

ОООООООО

ОООООООО

10
20

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Base Current — Continuous

— Peak

I

B

I

BM

ОООООООО

ОООООООО

ОООООООО

ОООООООО

3.0

6.0

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Total Power Dissipation (TC = 25_C)

Derate above 25_C

P

D

ОООООООО

ОООООООО

ОООООООО

150

1.0

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Watts
W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

ОООООООО

ОООООООО

ОООООООО

–65 to +175

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

ОООООООО

ОООООООО

ОООООООО

Max

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

R

θJC

ОООООООО

ОООООООО

ОООООООО

1.0

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C/W

Maximum Lead Temperature for Soldering Purposes:

1/8″ from Case for 5 Seconds

T

L

ОООООООО

ОООООООО

ОООООООО

ОООООООО

260

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by BU323Z/D

 Motorola, Inc. 1995



AUTOPROTECTED

DARLINGTON

10 AMPERES

360–450 VOLTS CLAMP

150 WATTS

CASE 340D–01

SOT–93/TO–218 TYPE

360 V

CLAMP

REV 7

BU323Z

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS (1)

Collector–Emitter Clamping Voltage (IC = 7.0 A)

(TC = –40°C to +125°C)

V

CLAMP

350

—

450

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector–Emitter Cutoff Current

(VCE = 200 V, IB = 0)

I

CEO

—

—

100

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

µAdc

Emitter–Base Leakage Current

(VEB = 6.0 Vdc, IC = 0)

I

EBO

—

—

50

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

ON CHARACTERISTICS (1)

Base–Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 100 mAdc)
(IC = 10 Adc, IB = 0.25 Adc)

V

BE(sat)

—
—

—
—

2.2

2.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector–Emitter Saturation Voltage

(IC = 7.0 Adc, IB = 70 mAdc)

(TC = 125°C)

(IC = 8.0 Adc, IB = 0.1 Adc)

(TC = 125°C)

(IC = 10 Adc, IB = 0.25 Adc)

V

CE(sat)

—
—
—
—
—

—
—
—
—
—

1.6

1.8

1.8

2.1

1.7

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter On Voltage

(IC = 5.0 Adc, VCE = 2.0 Vdc) (TC = –40°C to +125°C)
(IC = 8.0 Adc, VCE = 2.0 Vdc)

V

BE(on)

1.1

1.3

—
—

2.1

2.3

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Diode Forward Voltage Drop

(IF = 10 Adc)

V

F

—

—

2.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DC Current Gain

(IC = 6.5 Adc, VCE = 1.5 Vdc) (TC = –40°C to +125°C)
(IC = 5.0 Adc, VCE = 4.6 Vdc)

h

FE

150
500

—
—

—

3400

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

—

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)

f

T

—

—

2.0

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

C

ob

—

—

200

ÎÎÎ

ÎÎÎ

ÎÎÎ

pF

Input Capacitance

(VEB = 6.0 V)

C

ib

—

—

550

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

pF

CLAMPING ENERGY (see notes)

Repetitive Non–Destructive Energy Dissipated at turn–off:

(IC = 7.0 A, L = 8.0 mH, RBE = 100 Ω) (see Figures 2 and 4)

W

CLAMP

200

—

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mJ

SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)

Fall Time

t

fi

—

625

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ns

Storage Time

(IC = 6.5 A, IB1 = 45 mA,

V

BE(off)

= 0, R

BE(off)

= 0,

t

si

—

10

30

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Cross–over Time

VCC = 14 V, VZ = 300 V)

t

c

—

1.7

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%.