Motorola BC450A, BC450 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–100 Vdc
Collector–Base Voltage V
CBO
–100 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–300 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(IC = –1.0 mAdc, IB = 0)
V
(BR)CEO
–100 — — Vdc
Collector–Base Breakdown Voltage
(IC = –100 mA, IE = 0)
V
(BR)CBO
–100 — — Vdc
Emitter–Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V
(BR)EBO
–5.0 — — Vdc
Collector Cutoff Current
(VCB = –80 Vdc, IE = 0)
I
CBO
— — –100 nAdc
ON CHARACTERISTICS*
DC Current Gain
(IC = –2.0 mA, VCE = –5.0 V) BC450
BC450A
(IC = –10 mA, VCE = –5.0 V) BC450
BC450A
(IC = –100 mA, VCE = –5.0 V) BC450
BC450A
h
FE
50
120
50
100
50
60
—
—
—
—
—
—
460
220
—
—
—
—
—
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%.
Order this document
by BC450/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
BC450,A
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
(1)
(Continued)
Collector–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –10 mAdc)
V
CE(sat)
— –0.125 –0.25 Vdc
Base–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –10 mAdc)
V
BE(sat)
— –0.85 — Vdc
Base–Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –100 mA, VCE = –5.0 V)*
V
BE(on)
–0.55
—
—
–0.76
–0.7
–1.2
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –50 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
f
T
100 200 — MHz
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%.
5.0 µs
+10 V
0
V
in
5.0
µ
F
100
100
TURN–ON TIME
–1.0 V
V
CC
+40 V
R
L
OUTPUT
*CS < 6.0 pF
tr = 3.0 ns
5.0 µs
V
in
5.0
µ
F
100
100
TURN–OFF TIME
+V
BB
V
CC
+40 V
R
L
OUTPUT
*CS < 6.0 pF
tr = 3.0 ns
R
B
R
B
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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