Motorola BC161-16 Datasheet
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
Order this document
by BC161–16/D
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
T emperature Range
CEO
CBO
EBO
P
P
TJ, T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T
Characteristic
R
R
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Collector Cutoff Current
(IE = 0, V
(IE = 0, V
Collector–Emitter Breakdown Voltage
(IC = –100 µAdc, IE = 0)
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
Emitter–Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
1. Pulsed: Pulse Duration = 300 ms, Duty Cycle = 2.0%.
= –60 Vdc)
CES
= –60 Vdc, T
CES
Amb
= 150°C)
(1)
3
2
1
–60 Vdc
–60 Vdc
–5.0 Vdc
C
D
D
stg
q
JA
q
JC
–1.0 Adc
0.8
4.6
3.7
20
–65 to +200 °C
219 °C/W
50 °C/W
Watts
mW/°C
Watts
mW/°C
Symbol Min Max Unit
I
CES
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
CASE 79–04, STYLE 1
TO–39 (TO–205AD)
—
—
–60 — Vdc
–60 — Vdc
–5.0 — Vdc
–100
–100
nAdc
µAdc
(Replaces BC160–16/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
BC161-16
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = –100 mAdc, VCE = –1.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = –1.0 Adc, IB = –0.1 Adc)
Base–Emitter Saturation Voltage
(IC = –1.0 Adc, VCE = –1.0 Vdc)
(1)
(1)
(1)
SMALL–SIGNAL CHARACTERISTICS
Gain Bandwidth Product
(IC = –50 mAdc, VCE = –10 Vdc, f = 20 MHz)
Input Capacitance
(VEB = –10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Turn–On Time
(IC = –100 mAdc, IB1 = –5.0 µAdc)
Turn–Off Time
(IC = –100 mAdc, IB1 = IB2 = –5.0 µAdc)
1. Pulsed: Pulse Duration = 300 ms, Duty Cycle = 2.0%.
Symbol Min Max Unit
h
V
CE(sat)
V
BE(on)
f
C
C
obo
t
on
t
off
FE
T
ib
100 250 —
— –1.0 Vdc
— –1.7 Vdc
50 — MHz
— 180 pF
— 30 pF
— 500 ns
— 650 ns
+2.0 V
0
–10.85 V
PULSE WIDTH = 200 ns
RISE TIME
DUTY CYCLE
≤
2.0 ns
≤
2.0%
Figure 1. T urn–On Figure 2. T urn–Off
SWITCHING TIME EQUIVALENT TEST CIRCUITS
–30 V
0
11.2 V
+8.8 V
t
1
200
R
R
Ω
59
C
SCOPE
Ω
B
µ
200
Ω
R
B
1N916
s
µ
s
+3.0 V
–30 V
R
C
59
Ω
SCOPE
2 < t1 < 500
2 < t2 < 5.0 ns
2 < t3 > 1.0
DUTY CYCLE = 2.0%
t
3
t
2
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TRANSIENT CHARACTERISTICS
25°C 100°C
BC161-16
100
50
30
20
10
5.0
CAPACITANCE (pF)
3.0
2.0
1.0
–0.1
100
70
50
30
C
eb
C
cb
–0.2 –0.3 – 0.5 –1.0 –2.0 –3.0 – 5.0 –10 –20–30 –50 –100
REVERSE VOL TAGE (VOLTS)
Figure 3. Capacitances
IC/IB = 10
10
VCC = –30 V
7.0
5.0
IC/IB = 10
3.0
2.0
1.0
0.7
Q, CHARGE (nC)
0.5
0.3
0.2
0.1
–10 –20 –30 –50 –100 –200 –300 –500 –1000
IC, COLLECTOR CURRENT (mA)
Q
T
Q
A
Figure 4. Charge Data
100
70
50
30
VCC = –30 V
IC/IB = 10
t, TIME (ns)
s
t , STORAGE TIME (ns)
20
10
7.0
5.0
700
500
300
200
100
70
50
30
20
10
V
BE(off)
V
= 0 V
BE(off)
–20 – 30 –50 –70 –100 –200 – 300 –500 – 700
–10
IC, COLLECTOR CURRENT (mA)
Figure 5. Delay Time
ts′
–10
–20 –30 –50 –70 – 100 –200 –300 – 500 –700
IC, COLLECTOR CURRENT (mA)
= 2.0 V
IB1 = I
IC/IB = 10
VCC = –30 V
= ts – 1/3 t
B2
20
t, TIME (ns)
10
7.0
–1000
5.0
–10 –20 – 30 –50 –70 –100 –200 – 300 –500 – 700
IC, COLLECTOR CURRENT (mA)
–1000
Figure 6. Rise Time
2001000
100
70
50
f
–1000
30
f
t , FALL TIME (ns)
20
10
–10 –20 –30 –50 – 70 – 100 –200 –300 –500 –700 –1000
IC, COLLECTOR CURRENT (mA)
VCC = –30 V
IC/IB = 10
IB1 = I
B2
Figure 7. Storage Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 8. Fall Time
3
Loading...