MITSUBISHI RA55H4452M User Manual
<Silicon RF Power Modules >
RA55H4452M
RoHS Compliance , 440-520MHz
DESCRIPTION
The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 440- to 520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(V
=0V), only a small leakage current flows into the drain and the RF
GG
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.5V (typical) and 5V
(maximum). At V
=5V, the typical gate current is 1 mA.
GG
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement- Mode MOSFET Transistors
(I
≅0 @ VDD=12.5V, VGG=0V)
DD
>55W, ηT>43% @ f=440-490MHz,
• P
out
>45W, ηT>35% @ f=491-520MHz,
P
out
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current I
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
RoHS COMPLIANCE
• RA55H4452M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
55W 12.5V, 3 Stage Amp. For MOBILE RADIO
V
=12.5V, VGG=5V, Pin=50mW
DD
=1mA (typ) at VGG=5V
GG
BLOCK DIAGRAM
2
1
1 RF Input (Pin)
2 Gate Voltage (V
3 Drain Voltage (V
4 RF Output (P
5 RF Ground (Case)
out
GG
DD
)
PACKAGE CODE: H2S
3
4
5
), Power Control
), Battery
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA55H4452M-101
Antistatic tray,
10 modules/tray
Publication Date : Oct.2011
1
<Silicon RF Power Modules >
RA55H4452M
RoHS Compliance , 440-520MHz
55W 12.5V, 3 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V 17 V
VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V
Pin Input Power 100 mW
P
Output Power 65 W
out
T
Operation Case Temperature Range
case(OP)
T
Storage Temperature Range -40 to +110 °C
stg
(T
=+25°C, unless otherwise specified)
case
f=440-520MHz,
Z
G=ZL
=50Ω
-30 to +110 °C
Note1. The above parameters are independently guaranteed.
Note2. In order to keep high reliability of the equipment, it is better to keep the module temperature of the module is
recommended to keep lower than 90
under all conditions, and to keep lower than 60°C under standard conditions.
°C
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 440 - 520 MHz
55 @440-490MHz
P
Output Power
out
45 @491-520MHz
W
=12.5V
V
DD
V
=5V
ηT
2fo 2nd Harmonic - - -50 dBc
ρin
IGG Gate Current
— Stability
— Load VSWR Tolerance
Total Efficiency
Input VSWR - - 3:1 —
GG
=50mW
P
in
VDD=10.0-15.2V, Pin=25-70mW,
P
<65W (VGG control), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW, P
Load VSWR=20:1
=55W (VGG control),
out
43 @440-490MHz
35 @491-520MHz
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
%
Publication Date : Oct.2011
2
<Silicon RF Power Modules >
RA55H4452M
RoHS Compliance , 440-520MHz
TYPICAL PERFORMANCE
OUTPUT POWER, TOT AL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY
and INPUT VSWR ve rsus FREQUENCY
80
70
(W)
60
(-)
out
in
ρ
50
40
30
20
INPUT VSWR
OUTPUT POWER P
10
0
430 440 450 460 470 480 490 500 510 520 530
FREQ UENCY f(MHz )
OUT P U T P O WE R , POWER G AIN an d OUT P U T P O WE R , PO WER G AIN an d
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
60
50
(dBm)
out
40
Gp
55W 12.5V, 3 Stage Amp. For MOBILE RADIO
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
P
out
η
T
VDD=12.5V
V
P
ρ
in
in
P
out
=5V
GG
=50mW
80
70
60
(%)
T
50
η
40
30
20
10
TOTAL EFFICIENCY
0
24
20
(A)
DD
16
-30
-40
-50
-60
HARMONICS (dBc)
-70
-80
430 440 450 460 470 480 490 500 510 520 530
FREQ UENCY f(MHz )
60
50
(dBm)
out
Gp
40
VDD=12.5V
V
GG
P
in
nd
2
rd
3
=5V
=50mW
P
out
24
20
(A)
DD
I
16
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
0
-10-5 0 5 101520
INPUT POWER P
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
60
50
(dBm)
out
Gp
40
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
0
-10-5 0 5 101520
INPUT POWER P
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
120
110
100
(W)
90
out
80
70
60
50
40
30
20
OUTPUT POWER P
10
0
2 4 6 8 10 12 14 16
ve rsus DRAIN VOLTAGE versus DRAIN VOLTAGE
f=440MHz,
V
=5V ,
GG
=50mW
P
in
DRAIN VOLTAGE V
Publication Date : Oct.2011
12
I
DD
f=440MHz,
V
=12.5V,
DD
=5V
V
GG
8
DRAIN CURRENT I
4
0
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
0
12
I
DD
f=470MHz,
V
=12.5V,
DD
=5V
V
GG
8
4
DRAIN CURRENT
0
-10-5 0 5 101520
(dBm)
in
24
P
out
20
(A)
DD
16
12
I
DD
f=490MHz,
=12.5V,
V
DD
=5V
V
GG
8
4
DRAIN CURRENT I
0
60
50
(dBm)
out
40
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
0
INPUT POWER P
Gp
(dBm )
in
24
P
out
20
(A)
DD
16
12
I
DD
f=520MHz,
=12.5V,
V
DD
=5V
V
GG
8
4
DRAIN CURRENT I
0
-10-5 0 5 101520
(dBm)
in
DD
(V)
INPUT POWER P
24
22
P
out
I
DD
20
18
(A)
16
DD
14
12
10
8
6
4
DRAIN CURRENT I
2
0
120
(W)
out
110
100
f=470MHz,
V
=5V ,
GG
=50mW
P
90
in
80
70
60
50
40
30
20
OUTPUT POWER P
10
0
246810121416
DRAIN VOLTAGE V
(dBm)
in
24
22
P
out
I
DD
20
18
(A)
16
DD
14
12
10
8
6
4
DRAIN CURRENT I
2
0
(V)
DD
3
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