MITSUBISHI RA55H4047M User Manual
<Silicon RF Power Modules >
RA55H4047M
RoHS Compliance , 400-470MHz
DESCRIPTION
The RA55H4047M is a 55-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 400- to 470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(V
=0V), only a small leakage current flows into the drain and the RF
GG
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.5V (typical) and 5V
(maximum). At V
=5V, the typical gate current is 1 mA.
GG
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement- Mode MOSFET Transistors
(I
≅0 @ VDD=12.5V, VGG=0V)
DD
>55W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
• P
out
• Broadband Frequency Range: 400-470MHz
• Low-Power Control Current I
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
RoHS COMPLIANCE
• RA55H4047M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
55W 12.5V, 3 Stage Amp. For MOBILE RADIO
=1mA (typ) at VGG=5V
GG
BLOCK DIAGRAM
2
1
1 RF Input (Pin)
2 Gate Voltage (V
3 Drain Voltage (V
4 RF Output (P
5 RF Ground (Case)
out
GG
DD
)
PACKAGE CODE: H2S
3
4
5
), Power Control
), Battery
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA55H4047M-101
Antistatic tray,
10 modules/tray
Publication Date : Oct.2011
1
<Silicon RF Power Modules >
RA55H4047M
RoHS Compliance , 400-470MHz
55W 12.5V, 3 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V 17 V
VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V
Pin Input Power 100 mW
P
Output Power 65 W
out
T
Operation Case Temperature Range
case(OP)
T
Storage Temperature Range -40 to +110 °C
stg
(T
=+25°C, unless otherwise specified)
case
f=400-470MHz,
Z
G=ZL
=50Ω
-30 to +110 °C
Note1. The above parameters are independently guaranteed.
Note2. In order to keep high reliability of the equipment, it is better to keep the module temperature of the module is
recommended to keep lower than 90
under all conditions, and to keep lower than 60°C under standard conditions.
°C
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 400 - 470 MHz
P
Output Power 55 - - W
out
=12.5V
ηT
2fo 2nd Harmonic - - -50 dBc
ρin
IGG Gate Current
— Stability
— Load VSWR Tolerance
Total Efficiency 35 - - %
Input VSWR - - 3:1 —
V
DD
V
=5V
GG
=50mW
P
in
VDD=10.0-15.2V, Pin=25-70mW,
P
<65W (VGG control), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW, P
Load VSWR=20:1
=55W (VGG control),
out
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Oct.2011
2
<Silicon RF Power Modules >
RA55H4047M
RoHS Compliance , 400-470MHz
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
80
70
(W)
60
(-)
out
in
ρ
50
40
30
20
INPUT VSWR
10
OUTPUT POWER P
0
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
60
50
(dBm)
out
40
Gp
55W 12.5V, 3 Stage Amp. For MOBILE RADIO
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
P
out
η
T
VDD=12.5V
V
ρ
in
P
P
out
=5V
GG
=50m W
in
80
70
60
(%)
T
50
η
40
30
20
10
TOTAL EFFICIENCY
0
24
20
(A)
DD
16
-30
VDD=12.5V
V
=5V
-40
GG
P
in
=50m W
-50
-60
nd
HARMONICS (dBc)
-70
2
rd
3
-80
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
60
(dBm)
out
50
40
Gp
24
P
out
20
(A)
DD
I
16
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
0
-10-5 0 5 101520
INPUT POWER P
OUT PUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
60
50
(dBm)
out
40
Gp
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
0
-10-5 0 5 101520
INPUT POWER P
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
120
110
100
(W)
90
out
80
70
60
50
40
30
20
OUTPUT POWER P
10
0
246810121416
ve rsus DRAIN VOLTAGE ve rsus DRAIN VOLTAGE
f=400MHz,
=5V ,
V
GG
=50m W
P
in
DRAIN VOLTAGE V
Publication Date : Oct.2011
12
I
DD
f=400MHz,
V
=12.5V,
DD
=5V
V
GG
8
DRAIN CURRENT I
4
0
OUTPUT POWER P
30
20
POWER GAIN Gp(dB)
10
I
DD
f=430MHz,
V
=12.5V,
DD
=5V
V
GG
0
12
8
4
DRAIN CURRENT
0
-10-5 0 5 101520
(dBm)
in
24
P
out
20
(A)
DD
16
12
I
DD
f=450MHz,
=12.5V,
V
DD
=5V
V
GG
8
4
DRAIN CURRENT I
0
(dBm)
out
OUTPUT POWER P
60
50
40
30
20
POWER GAIN Gp(dB)
10
0
INPUT POWER P
Gp
(dBm)
in
24
P
out
20
(A)
DD
16
12
I
DD
f=470MHz,
=12.5V,
V
DD
=5V
V
GG
8
4
DRAIN CURRENT I
0
-10-5 0 5 101520
(dBm)
in
24
22
P
out
I
DD
20
18
(A)
16
DD
14
12
10
8
6
4
DRAIN CURRENT I
2
0
(V)
DD
120
110
100
(W)
90
out
80
70
60
50
40
30
20
OUTPUT POWER P
10
0
246810121416
INPUT POW ER P
f=430MHz,
=5V,
V
GG
=50m W
P
in
DRAIN VOLTAGE V
(dBm)
in
DD
(V)
24
22
P
out
20
18
(A)
16
DD
14
12
I
DD
10
8
6
4
DRAIN CURRENT I
2
0
3
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