MITSUBISHI RA55H3340M User Manual
<Silicon RF Power Modules >
RA55H3340M
RoHS Compliance , 330-400MHz
DESCRIPTION
The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 330- to 400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(V
=0V), only a small leakage current flows into the drain and the RF
GG
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.5V (typical) and 5V
(maximum). At V
=5V, the typical gate current is 1 mA.
GG
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement- Mode MOSFET Transistors
(I
≅0 @ VDD=12.5V, VGG=0V)
DD
>55W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
• P
out
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current I
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
RoHS COMPLIANCE
• RA55H3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
55W 12.5V, 3 Stage Amp. For MOBILE RADIO
=1mA (typ) at VGG=5V
GG
BLOCK DIAGRAM
2
1
1 RF Input (Pin)
2 Gate Voltage (V
3 Drain Voltage (V
4 RF Output (P
5 RF Ground (Case)
out
GG
DD
)
PACKAGE CODE: H2S
3
4
5
), Power Control
), Battery
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA55H3340M-101
Antistatic tray,
10 modules/tray
Publication Date : Oct.2011
1
<Silicon RF Power Modules >
RA55H3340M
RoHS Compliance , 330-400MHz
55W 12.5V, 3 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V 17 V
VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V
Pin Input Power 100 mW
P
Output Power 65 W
out
T
Operation Case Temperature Range
case(OP)
T
Storage Temperature Range -40 to +110 °C
stg
(T
=+25°C, unless otherwise specified)
case
f=330-400MHz,
Z
G=ZL
=50Ω
-30 to +110 °C
Note1. The above parameters are independently guaranteed.
Note2. In order to keep high reliability of the equipment, it is better to keep the module temperature of the module is
recommended to keep lower than 90
under all conditions, and to keep lower than 60°C under standard conditions.
°C
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 330 - 400 MHz
P
Output Power 55 - - W
out
=12.5V
ηT
2fo 2nd Harmonic - - -50 dBc
ρin
IGG Gate Current
— Stability
— Load VSWR Tolerance
Total Efficiency 35 - - %
Input VSWR - - 3:1 —
V
DD
V
=5V
GG
=50mW
P
in
VDD=10.0-15.2V, Pin=25-70mW,
P
<65W (VGG control), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW, P
Load VSWR=20:1
=55W (VGG control),
out
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Oct.2011
2
<Silicon RF Power Modules >
RA55H3340M
RoHS Compliance , 330-400MHz
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
80
70
(W)
60
out
(-)
in
ρ
50
40
30
20
INPUT VSWR
10
OUTPUT POWER P
0
ρ
in
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
60
50
Gp
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
-10 -5 0 5 10 15 20
INPUT POWER P
55W 12.5V, 3 Stage Amp. For MOBILE RADIO
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
P
out
η
T
I
DD
in
VDD=12.5V
=5V
V
GG
=50mW
P
in
P
out
f=330MHz,
V
DD
V
GG
(dBm)
=12.5V,
=5V
24
20
16
12
8
4
0
80
70
60
50
40
30
20
10
0
-30
-40
(%)
T
η
TOTAL
EFFICIENCY
-50
-60
HARMONICS (dBc)
-70
-80
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
60
(A)
DD
50
Gp
40
30
(dBm)
out
P
20
OUTPUT POWER
10
DRAIN CURRENT I
POWER GAIN Gp(dB)
I
DD
0
-10 -5 0 5 10 15 20
INPUT POW ER P
VDD=12.5V
=5V
V
GG
=50mW
P
in
f=365MHz,
V
V
(dBm)
in
rd
3
nd
2
=12.5V,
DD
=5V
GG
24
P
out
20
(A)
DD
I
16
12
8
4
DRAIN CURRENT
0
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
50
Gp
P
out
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
I
DD
f=400MHz,
=12.5V,
V
DD
V
=5V
GG
-10 -5 0 5 10 15 20
INPUT POWER P
(dBm)
in
24
20
16
12
8
4
0
(A)
DD
DRAIN CURRENT I
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
120
110
f=330MHz,
100
(W)
out
90
80
V
GG
P
in
=5V,
=50mW
70
60
50
40
30
20
OUTPUT POWER P
10
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE V
DD
(V)
24
22
20
(A)
18
P
out
16
DD
14
12
I
DD
10
8
6
4
2
DRAIN CURRENT I
0
(W)
out
OUTPUT POWER P
120
110
100
90
80
70
60
50
40
30
20
10
0
f=365MHz,
=5V,
V
GG
P
=50mW
in
2 4 6 8 10 12 14 16
DRAIN VOLTAGE V
24
22
20
(A)
P
out
18
16
DD
14
12
10
I
DD
8
6
4
2
DRAIN CURRENT I
0
(V)
DD
Publication Date : Oct.2011
3
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