MITSUBISHI RA45H7687M1 User Manual

< Silicon RF Power Modules >

BLOCK

DIAGRAM

RA45H7687M1

RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO

DESCRIPTION

The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for

12.8-volt mobile radios that operate in the 763- to 870-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage 1 and the gate voltage 2(V

GG1=VGG2

=0V), only a small
leakage current flows into the drain and the nominal output signal
(P

=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is

out

supplied to the gate voltage 1, the output power and the drain
current increase as the gate voltage 2 increases. The output
power and the drain current increase substantially with the gate
voltage 2 around 0V (minimum) under the condition when the gate
voltage 1 is kept in 3.4V. The nominal output power becomes
available at the state that V
At this point, V
At V

=3.4V & V

GG1

has to be kept in 3.4V.

GG1

=5V, the typical gate currents are 0.4mA.

GG2

is 4V (typical) and 5V (maximum).

GG2

This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltages and controlling the output power
with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD0 @ VDD=12.8V, VGG=0V)

• P

>45W, T>33% @V

out

=12.8V, V

DD

=3.4V, V

GG1

• Broadband Frequency Range: 763-870MHz

=5V, Pin=50mW

GG2

1 RF Input added Gate Voltage 1(Pin&V
2 Gate Voltage 2(V
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)

PACKAGE CODE: H2M

• Metal cap structure that makes the improvements of RF radiation

simple

• Low-Power Control Current I

GG1+IGG2

=0.4mA (typ) @ V

=3.4V, V

GG1

GG2

=5V

• Module Size: 67 x 19.4 x 9.9 mm

• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output

power with the input power.

2 3

), Power Control

GG2

)

out

GG1

41

5

)

RoHS COMPLIANCE

• RA45H7687M1 is a RoHS compliant product.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.

ORDERING INFORMATION:

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDER NUMBER SUPPLYFORM

RA45H7687M1-101

Antistatic tray,

10 modules/tray

Publication Date : Oct．2011

1

< Silicon RF Power Modules >

RA45H7687M1

RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO

MAXIMUM RATINGS

(T

=+25°C, ZG=ZL=50, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS RATING UNIT

V
V
V

P

P

T

case(OP)

T

Drain Voltage

DD

Gate Voltage 1 V

GG1

Gate Voltage 2

GG2

Input Power 100 mW

in

Output Power 60 W

out

Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C

stg

V

=3.4V±7%, V

GG1

<5V, VDD<12.8V, Pin=50mW 4.5 V

GG2

V

=3.4V±7%, VDD<12.8V, Pin=50mW

GG1

<5V, Pin=0W

GG2

f=763-870MHz,
V

=3.4V±7%, V

GG1

GG2

<5V

17 V

6 V

-30 to +100 °C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS

(T

=+25°C, ZG=ZL=50, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

F Frequency Range 763 - 870 MHz

P

T

2f

3f



I

P

— Stability

— Load VSWR Tolerance

out1

in

DD

out2

Output Power 1 VDD=12.8V, V

=3.4V, V

GG1

=5V, Pin=50mW 45 - - W

GG2

Total Efficiency VDD=12.8V 33 - - %
2ndHarmonic V

o

3ndHarmonic V

o

=3.4V - - -40 dBc

GG1

=5V - - -35 dBc

GG2

Input VSWR Pin=50mW - - 3:1 —
Leakage Current VDD=17V, V
Output Power 2*

VDD=15.2V, V

GG1=VGG2

=0V, Pin=0W - - 1 mA

=3.4V, V

GG1

=1V, Pin=2dBm

GG2

- - 1.5 W

VDD=10.0-15.2V, Pin=1-100mW,

1.5<P

<50W (V

out

GG2

control, V

GG1

=3.4V),

No parasitic oscillation —
Load VSWR=3:1
VDD=15.2V, Pin=50mW,
P

out

=45W (V

GG2

control, V

GG1

=3.4V),

No degradation or destroy —

Load VSWR=20:1

*: This is guaranteed as design value.

All parameters, conditions, ratings, and limits are subject to change without notice.

Publication Date : Oct．2011

2

< Silicon RF Power Modules >

RA45H7687M1

RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO

TYPICAL PERFORMANCE (T

OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
versus FREQUENCY

80
70

(W)

60

out

50
40
30

TOTAL EFFICIENCY(%)

OUTPUT POWER P

20
10

760 780 800 820 840 860 880

INPUT VSWR versus FREQUENCY

5

4

(-)

in

r

3

h

T

FREQUENCY f (MHz)

=+25°C, ZG=ZL=50, unless otherwise specified)

case

-30

P

out

-40

-50

-60

VDD=12.8V
V

=3.4V

GG1

V

=5V

GG2

Pin=50mW

HARMONICS (dBc)

-70

-80
760 780 800 820 840 860 880

VDD=12.8V
V

=3.4V

GG1

V

=5V

GG2

Pin=50mW

VDD=12.8V
V

=3.4V

GG1

V

=5V

GG2

Pin=50mW

3

FREQUENCY f (MHz)

rd

nd

2

2

INPUT VSWR

r

in

1

760 780 800 820 840 860 880

FREQUENCY f (MHz)

Publication Date : Oct．2011

3