< Silicon RF Power Modules >
BLOCK
DIAGRAM
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for
12.8-volt mobile radios that operate in the 763- to 870-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage 1 and the gate voltage 2(V
GG1=VGG2
=0V), only a small
leakage current flows into the drain and the nominal output signal
(P
=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is
out
supplied to the gate voltage 1, the output power and the drain
current increase as the gate voltage 2 increases. The output
power and the drain current increase substantially with the gate
voltage 2 around 0V (minimum) under the condition when the gate
voltage 1 is kept in 3.4V. The nominal output power becomes
available at the state that V
At this point, V
At V
=3.4V & V
GG1
has to be kept in 3.4V.
GG1
=5V, the typical gate currents are 0.4mA.
GG2
is 4V (typical) and 5V (maximum).
GG2
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltages and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.8V, VGG=0V)
• P
>45W, T>33% @V
out
=12.8V, V
DD
=3.4V, V
GG1
• Broadband Frequency Range: 763-870MHz
=5V, Pin=50mW
GG2
1 RF Input added Gate Voltage 1(Pin&V
2 Gate Voltage 2(V
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
PACKAGE CODE: H2M
• Metal cap structure that makes the improvements of RF radiation
simple
• Low-Power Control Current I
GG1+IGG2
=0.4mA (typ) @ V
=3.4V, V
GG1
GG2
=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output
power with the input power.
2 3
), Power Control
GG2
)
out
GG1
41
5
)
RoHS COMPLIANCE
• RA45H7687M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.
ORDERING INFORMATION:
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDER NUMBER SUPPLYFORM
RA45H7687M1-101
Antistatic tray,
10 modules/tray
Publication Date : Oct．2011
1
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
V
P
P
T
case(OP)
T
Drain Voltage
DD
Gate Voltage 1 V
GG1
Gate Voltage 2
GG2
Input Power 100 mW
in
Output Power 60 W
out
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
V
=3.4V±7%, V
GG1
<5V, VDD<12.8V, Pin=50mW 4.5 V
GG2
V
=3.4V±7%, VDD<12.8V, Pin=50mW
GG1
<5V, Pin=0W
GG2
f=763-870MHz,
V
=3.4V±7%, V
GG1
GG2
<5V
17 V
6 V
-30 to +100 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
F Frequency Range 763 - 870 MHz
P
T
2f
3f
I
P
— Stability
— Load VSWR Tolerance
out1
in
DD
out2
Output Power 1 VDD=12.8V, V
=3.4V, V
GG1
=5V, Pin=50mW 45 - - W
GG2
Total Efficiency VDD=12.8V 33 - - %
2ndHarmonic V
o
3ndHarmonic V
o
=3.4V - - -40 dBc
GG1
=5V - - -35 dBc
GG2
Input VSWR Pin=50mW - - 3:1 —
Leakage Current VDD=17V, V
Output Power 2*
VDD=15.2V, V
GG1=VGG2
=0V, Pin=0W - - 1 mA
=3.4V, V
GG1
=1V, Pin=2dBm
GG2
- - 1.5 W
VDD=10.0-15.2V, Pin=1-100mW,
1.5<P
<50W (V
out
GG2
control, V
GG1
=3.4V),
No parasitic oscillation —
Load VSWR=3:1
VDD=15.2V, Pin=50mW,
P
out
=45W (V
GG2
control, V
GG1
=3.4V),
No degradation or destroy —
Load VSWR=20:1
*: This is guaranteed as design value.
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Oct．2011
2
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
versus FREQUENCY
80
70
(W)
60
out
50
40
30
TOTAL EFFICIENCY(%)
OUTPUT POWER P
20
10
760 780 800 820 840 860 880
INPUT VSWR versus FREQUENCY
5
4
(-)
in
r
3
h
T
FREQUENCY f (MHz)
=+25°C, ZG=ZL=50, unless otherwise specified)
case
-30
P
out
-40
-50
-60
VDD=12.8V
V
=3.4V
GG1
V
=5V
GG2
Pin=50mW
HARMONICS (dBc)
-70
-80
760 780 800 820 840 860 880
VDD=12.8V
V
=3.4V
GG1
V
=5V
GG2
Pin=50mW
VDD=12.8V
V
=3.4V
GG1
V
=5V
GG2
Pin=50mW
3
FREQUENCY f (MHz)
rd
nd
2
2
INPUT VSWR
r
in
1
760 780 800 820 840 860 880
FREQUENCY f (MHz)
Publication Date : Oct．2011
3
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
OUTPUT POWER,POWER GAIN and OUTPUT POWER,POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
60
P
50
(dBm)
out
Gp
40
out
24
20
16
(A)
DD
60
50
(dBm)
out
40
Gp
24
P
out
20
16
(A)
DD
30
20
POWER GAIN Gp (dB)
10
OUTPUT POWER P
I
DD
0
-10 -5 0 5 10 15 20
INPUTPOWER Pin(dBm)
f=764MHz
VDD=12.8V
V
=3.4V
GG1
V
=5V
GG2
12
8
4
0
DRAIN CURRENT I
30
20
POWER GAIN Gp (dB)
10
OUTPUT POWER P
I
DD
0
-10 -5 0 5 10 15 20
INPUTPOWER Pin(dBm)
f=806MHz
VDD=12.8V
V
V
OUTPUT POWER,POWER GAIN and OUTPUT POWER and DRAIN CURRENT
DRAIN CURRENT versus INPUT POWER versus DRAIN VOLTAGE
60
50
(dBm)
out
40
Gp
30
20
POWER GAIN Gp (dB)
10
OUTPUT POWER P
I
DD
0
-10 -5 0 5 10 15 20
INPUTPOWER Pin(dBm)
P
out
f=870MHz
VDD=12.8V
V
GG1
V
GG2
=3.4V
=5V
24
20
16
12
8
4
0
90
f=764MHz
80
V
=3.4V
(A)
DD
(W)
out
70
60
GG1
V
=5V
GG2
Pin=50mW
P
50
40
30
DRAIN CURRENT I
20
OUTPUT POWER P
10
I
DD
0
2 4 6 8 10 12 14 16
DRAINVOLTAGE VDD(V)
12
8
GG1
GG2
=3.4V
=5V
4
DRAIN CURRENTI
0
18
out
16
14
12
(A)
DD
10
8
6
4
DRAIN CURRENT I
2
0
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
90
f=806MHz
80
V
=3.4V
(W)
70
out
60
GG1
V
=5V
GG2
Pin=50mW
50
40
I
DD
30
20
OUTPUT POWER P
10
0
2 4 6 8 10 12 14 16
DRAINVOLTAGE VDD(V)
Publication Date : Oct．2011
18
16
(A)
14
DD
12
10
8
P
out
6
4
DRAIN CURRENT I
2
0
90
f=870MHz
80
V
=3.4V
(W)
70
out
60
GG1
V
=5V
GG2
Pin=50mW
50
40
I
DD
30
20
OUTPUT POWER P
10
P
out
0
18
16
14
12
10
8
6
4
2
0
(A)
DD
DRAIN CURRENT I
2 4 6 8 10 12 14 16
DRAINVOLTAGE VDD(V)
4
< Silicon RF Power Modules >
(dBm)
(dBm)
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE2 versus GATE VOLTAGE2
60
50
(W)
out
40
30
20
10
OUTPUT POWER P
0
0 1 2 3 4 5
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
60
(dBm)
50
(W)
out
40
P
(dBm)
out
I
DD
P
GATE VOLTAGE V
versus GATE VOLTAGE2 versus GATE VOLTAGE2
P
(dBm)
out
=+25°C, ZG=ZL=50, unless otherwise specified)
case
12
10
(A)
DD
8
6
f=764MHz
VDD=12.8V
V
(W)
out
=3.4V
GG1
Pin=50mW
4
2
DRAIN CURRENT I
60
50
(W)
out
40
30
20
10
OUTPUT POWER P
0
(V)
GG2
12
60
(dBm)
10
8
(A)
DD
50
(W)
out
40
P
(dBm)
out
I
DD
f=806MHz
P
(W)
out
VDD=12.8V
V
=3.4V
GG1
Pin=50mW
0
0 1 2 3 4 5
GATE VOLTAGE V
f=764MHz
VDD=12.8V
V
=3.4V
GG1
Pin=2dBm
GG2
(V)
P
out
(dBm)
12
10
8
6
4
2
0
12
10
8
(A)
DD
DRAIN CURRENT I
(A)
DD
30
I
DD
20
P
(W)
10
OUTPUT POWER P
out
f=870MHz
VDD=12.8V
V
GG1
Pin=50mW
0
0 1 2 3 4 5
GATE VOLTAGE V
GG2
(V)
=3.4V
6
4
2
DRAIN CURRENT I
0
30
I
20
10
OUTPUT POWER P
DD
P
0
1 2 3 4 5
GATE VOLTAGE V
GG2
(V)
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE2 versus GATE VOLTAGE2
60
50
40
f=806MHz
VDD=12.8V
V
=3.4V
GG1
Pin=2dBm
P
out
(dBm)
(W)
out
30
20
I
10
OUTPUT POWER P
DD
0
1 2 3 4 5
GATE VOLTAGE V
GG2
(V)
(dBm)
P
12
10
(A)
DD
8
6
4
2
(W)
out
DRAIN CURRENT I
0
60
(dBm)
(W)
out
50
40
f=870MHz
VDD=12.8V
V
=3.4V
GG1
Pin=2dBm
P
out
(dBm)
30
20
10
OUTPUT POWER P
0
1 2 3 4 5
GATE VOLTAGE V
GG2
(V)
I
DD
P
6
4
2
(W)
out
DRAIN CURRENT I
0
12
10
(A)
DD
8
6
4
(W)
out
DRAIN CURRENT I
2
0
Publication Date : Oct．2011
5
< Silicon RF Power Modules >
OUTLINE
DRAWING
(mm)
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
67±1
60±1
2-R2±0.5
4±1
19.
7±1
10.
1
15±
②①
49.8±1
③ ④
6)
(3.2
1
18±
0.5
4±
12.5±1
17±1
44±1
56±1
+0.6/-0.4
3.1
0.6±0.2
±0.5
7.3
）
.9
（9
）
6
（2.
1 RF Input added Gate Voltage 1(Pin& V
2 Gate Voltage 2(V
GG2
)
GG1
)
3 Drain Voltage (VDD)
Publication Date : Oct．2011
4 RF Output (P
out
)
5 RF Ground (Case)
6
< Silicon RF Power Modules >
A
GG1
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
TEST BLOCK DIAGRAM
- +
DC Power
Supply V
Signal
Generator
C1: 4700pF, C2: 1000pF,R1: suitable. Please refer the detail below.
C3, C4: 4700pF, 22uF in parallel
V
GG1
Attenuator
=3.4V
EQUIVALENT CIRCUITEQUIVALENT CIRCUIT
Pre-
amplifier
Attenuator
3
Power
Meter
Directional
Coupler
C2
V
GG1
C1R1
ZG=50Ω
C3 C4
- +
DCPower
Supply V
GG2
DUT
4
321
+ -
DCPower
Supply V
5
ZL=50Ω
DD
Spectrum
Analyzer
Directional
Coupler
Attenuator
1 RF Input added Gate Voltage 1(Pin& V
2 Gate Voltage 2(V
GG2
)
3 Drain Voltage (VDD)
4 RF Output (P
out
)
5 RF Ground (Case)
Power
Meter
)
GG1
1
2
NOTE: Resistance between Gate Voltage 1, where RF is input, and ground equals to 15k ohm.
External resistance connected to V
that doesn't prevent RF characteristic on this module.
; impedance between Pin&V
GG1
and ground needs to make high impedance
GG1
Publication Date : Oct．2011
7
4
5
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is
attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto
metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors,
and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and
RF connection.
Following conditions must be avoided:
a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V.Appropriate ESD precautions are required.
Mounting:
A thermal compound between module and heat sink is recommended for low thermal contact resistance.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At P
=45W, VDD=12.8V and Pin=50mW each stage transistor operating conditions are:
out
P
Stage
st
1
nd
2
in
(W)
0.05 3.0 3.5 0.62
3.0 45.0 0.6 9.96
The channel temperatures of each stage transistor Tch= T
T
= T
ch1
T
= T
ch2
+ (12.8V x 0.62A – 3.0W + 0.05W) x 3.5°C/W = T
case
+ (12.8V x 9.96A – 45.0W + 3.0W) x 0.6°C/W = T
case
P
out
(W)
R
th(ch-case)
(°C/W)
I
@ T=33%
DD
(A)
+ (VDDx IDD- P
case
V
(V)
12.8
case
case
DD
out
+ 17.5 °C
+ 51.3 °C
+ Pin) x R
th(ch-case)
are:
For long-term reliability, it is best to keep the module case temperature (T
temperature T
=60°C and P
air
=45W, the required thermal resistance R
out
) below 90°C. For an ambient
case
th (case-air)
= ( T
case
- T
) / ( (P
air
/ T) - P
out
out
Pin) of the heat sink, including the contact resistance, is:
R
th(case-air)
= (90°C - 60°C) / (45W/33% - 45W + 0.05W) = 0.33 °C/W
When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage transistor is:
T
= T
= T
+ 47.5 °C
air
+ 81.3 °C
air
ch1
T
ch2
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
Output Power Control:
Depending on linearity, the following three methods are recommended to control the output power:
a) Non-linear FM modulation at high power operating:
By the gate voltages (V
When the gate voltages are close to zero, the nominal output signal (P
small leakage current flows from the battery into the drain. (On the following, V
Around V
Around V
=0V(minimum), the output power and drain current increases substantially.
GG2
=4V (typical) to V
GG2
GG1
and V
).
GG2
=45W) is attenuated up to 60 dB and only a
out
GG1
=5V (maximum), the nominal output power becomes available.
GG2
has to be kept in 3.4V.)
b) Linear AM modulation:
By RF input power Pin. (On the following, V
V
is used to set the drain’s quiescent current for the required linearity.
GG2
has to be kept in 3.4V.)
GG1
Publication Date : Oct．2011
8
+
< Silicon RF Power Modules >
have a
until cold after switch off.
that
his products without cause damage for human and
details
In particular, while these products are highly reliable for their designed purpose, they are not manufactured under
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
In the application, which is base station applications and
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
predicted operating life time of
an authorized Mitsubishi
therefore
device is
It is
sink in conjunction with other cooling methods as needed (fan,
lower than 120deg/C(in case of
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
eded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
the
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any
, please refer the last page of
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a
4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50?
c) Is the source impedance ZG=50?
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
possibility to receive a burn to touch the operating product directly or touch the product
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
do not leakage the unnecessary electric wave and use t
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For copies of the formal specification
sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed
for consumer mobile communication terminals and were not specifically designed for use in other applications.
a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-
period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
exce
extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.
8.
way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
9
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
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