MITSUBISHI RA45H4045MR User Manual
< Silicon RF Power Modules >
RA45H4045MR
RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 400- to 450-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum).
At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>45W, T>35% @ VDD=12.5V, VGG=5V, Pin=50mW
out
• Broadband Frequency Range: 400-450MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Reverse PIN type
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
1
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
out
)
3
PACKAGE CODE: H2RS
4
5
RoHS COMPLIANCE
• RA45H4045MR-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
RA45H4045MR-101
Antistatic tray,
10 modules/tray
Publication Date : Oct．2011
1
< Silicon RF Power Modules >
RA45H4045MR
RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage VGG<5V 17 V
DD
Gate Voltage VDD<12.5V, Pin=0mW 6 V
GG
Input Power 100 mW
in
Output Power 55 W
out
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
f=400-450MHz,
ZG=ZL=50
-30 to +110 °C
Above Parameters are guaranteed independently
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 400 - 450 MHz
P
2f
I
GG
— Stability
— Load VSWR Tolerance
Output Power 45 - - W
out
Total Efficiency 35 - - %
T
2ndHarmonic - - -25 dBc
o
Input VSWR - - 3:1 —
in
Gate Current
VDD=12.5V
VGG=5V
Pin=50mW
VDD=10.0-15.2V, Pin=25-70mW,
P
<55W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW, P
=45W (VGGcontrol),
out
Load VSWR=20:1
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
All Parameters, Conditions, Ratings and Limits are subject to change without notice
Publication Date : Oct．2011
2
< Silicon RF Power Modules >
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
Pin=50mW
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
RA45H4045MR
RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
80
70
(W)
(-)
60
out
in
50
40
30
20
INPUT VSWR
10
OUTPUT POWER P
0
390 400 410 420 430 440 450 460
60
50
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
FREQUENCY f(MHz)
Gp
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
80
P
out
70
60
50
T
VDD=12.5V
VGG=5V
in
40
30
20
10
0
(%)
T
TOTAL EFFICIENCY
-20
VDD=12.5V
-30
VGG=5V
Pin=50mW
-40
-50
nd
HARMONICS (dBc)
-60
rd
3
2
-70
390 400 410 420 430 440 450 460
FREQUENCY f(MHz)
24
P
out
20
(A)
DD
16
12
I
DD
f=400MHz,
VDD=12.5V,
VGG=5V
8
4
DRAIN CURRENT I
0
60
50
Gp
P
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
I
DD
f=430MHz,
VDD=12.5V,
VGG=5V
24
out
20
(A)
DD
I
16
12
8
4
DRAIN CURRENT
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
60
50
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
Gp
I
DD
0
P
f=450MHz,
VDD=12.5V,
VGG=5V
24
out
20
(A)
DD
16
12
8
4
DRAIN CURRENT I
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
100
(W)
out
80
70
VGG=5V,
Pin=50mW
f=400MHz,
90
60
50
40
30
20
10
OUTPUT POWER P
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
20
P
out
18
16
14
(A)
DD
12
I
DD
10
8
6
4
2
DRAIN CURRENT I
0
100
(W)
out
80
70
VGG=5V,
Pin=50mW
P
out
f=430MHz,
90
60
50
40
30
20
10
OUTPUT POWER P
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
20
18
16
(A)
14
DD
12
10
I
DD
8
6
4
2
DRAIN CURRENT I
0
Publication Date : Oct．2011
3
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