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< Silicon RF Power Modules >
RA45H4045MR
RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 400- to 450-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum).
At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>45W, T>35% @ VDD=12.5V, VGG=5V, Pin=50mW
out
• Broadband Frequency Range: 400-450MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Reverse PIN type
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
1
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
out
)
3
PACKAGE CODE: H2RS
4
5
RoHS COMPLIANCE
• RA45H4045MR-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
RA45H4045MR-101
Antistatic tray,
10 modules/tray
Publication Date : Oct．2011
1
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< Silicon RF Power Modules >
RA45H4045MR
RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage VGG<5V 17 V
DD
Gate Voltage VDD<12.5V, Pin=0mW 6 V
GG
Input Power 100 mW
in
Output Power 55 W
out
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
f=400-450MHz,
ZG=ZL=50
-30 to +110 °C
Above Parameters are guaranteed independently
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 400 - 450 MHz
P
2f
I
GG
— Stability
— Load VSWR Tolerance
Output Power 45 - - W
out
Total Efficiency 35 - - %
T
2ndHarmonic - - -25 dBc
o
Input VSWR - - 3:1 —
in
Gate Current
VDD=12.5V
VGG=5V
Pin=50mW
VDD=10.0-15.2V, Pin=25-70mW,
P
<55W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW, P
=45W (VGGcontrol),
out
Load VSWR=20:1
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
All Parameters, Conditions, Ratings and Limits are subject to change without notice
Publication Date : Oct．2011
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< Silicon RF Power Modules >
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
Pin=50mW
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
RA45H4045MR
RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
80
70
(W)
(-)
60
out
in
50
40
30
20
INPUT VSWR
10
OUTPUT POWER P
0
390 400 410 420 430 440 450 460
60
50
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
FREQUENCY f(MHz)
Gp
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
80
P
out
70
60
50
T
VDD=12.5V
VGG=5V
in
40
30
20
10
0
(%)
T
TOTAL EFFICIENCY
-20
VDD=12.5V
-30
VGG=5V
Pin=50mW
-40
-50
nd
HARMONICS (dBc)
-60
rd
3
2
-70
390 400 410 420 430 440 450 460
FREQUENCY f(MHz)
24
P
out
20
(A)
DD
16
12
I
DD
f=400MHz,
VDD=12.5V,
VGG=5V
8
4
DRAIN CURRENT I
0
60
50
Gp
P
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
I
DD
f=430MHz,
VDD=12.5V,
VGG=5V
24
out
20
(A)
DD
I
16
12
8
4
DRAIN CURRENT
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
60
50
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
Gp
I
DD
0
P
f=450MHz,
VDD=12.5V,
VGG=5V
24
out
20
(A)
DD
16
12
8
4
DRAIN CURRENT I
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
100
(W)
out
80
70
VGG=5V,
Pin=50mW
f=400MHz,
90
60
50
40
30
20
10
OUTPUT POWER P
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
20
P
out
18
16
14
(A)
DD
12
I
DD
10
8
6
4
2
DRAIN CURRENT I
0
100
(W)
out
80
70
VGG=5V,
Pin=50mW
P
out
f=430MHz,
90
60
50
40
30
20
10
OUTPUT POWER P
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
20
18
16
(A)
14
DD
12
10
I
DD
8
6
4
2
DRAIN CURRENT I
0
Publication Date : Oct．2011
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< Silicon RF Power Modules >
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
RA45H4045MR
RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
100
f=450MHz,
90
(W)
out
OUTPUT POWER P
(W)
out
OUTPUT POWER P
VGG=5V,
80
Pin=50mW
70
60
50
40
30
20
10
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
80
f=400MHz,
70
VDD=12.5V,
Pin=50mW
60
50
40
30
20
10
0
2.5 3 3.5 4 4.5 5 5.5
GATE VOLTAGE VGG(V)
=+25°C, ZG=ZL=50, unless otherwise specified)
case
20
18
16
P
out
I
DD
14
12
10
(A)
DD
8
6
4
2
DRAIN CURRENT I
0
16
P
out
I
DD
14
12
10
8
(A)
DD
6
4
2
DRAIN CURRENT I
0
80
f=430MHz,
70
VDD=12.5V,
(W)
out
Pin=50mW
60
50
40
30
20
10
OUTPUT POWER P
0
2.5 3 3.5 4 4.5 5 5.5
GATE VOLTAGE VGG(V)
16
P
out
14
(A)
12
DD
10
I
DD
8
6
4
2
DRAIN CURRENT I
0
80
f=450MHz,
70
(W)
VDD=12.5V,
out
Pin=50mW
60
50
40
30
20
10
OUTPUT POWER P
0
2.5 3 3.5 4 4.5 5 5.5
GATE VOLTAGE VGG(V)
Publication Date : Oct．2011
16
P
out
14
(A)
12
DD
10
I
DD
8
6
4
2
DRAIN CURRENT I
0
4
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< Silicon RF Power Modules >
OUTLINE
DRAWING
(mm)
14.0
±
1
9.5
±
0.5
2.0 ±0.5
17.0±0.5
4.0
±
0.3
7.5 ±0.5
2.3
±
0.3
(9.88)
RA45H4045MR
RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
66.0 ±0.5
3.0 ±0.3
7.25 ±0.8
21.0 ±0.5
10.5 ±1
60.0 ±0.5
51.5 ±0.5
4 3 2 1
22.5 ±1
49.5 ±1
54.0 ±1
2-R2 ±0.5
5
Ø0.45 ±0.15
3.1 +0.6/-0.4
0.09 ±0.02
Publication Date : Oct．2011
(50.4)
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (P
out
)
5 RF Ground (Case)
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< Silicon RF Power Modules >
C1, C2
: 4700pF,22uF in parallel
Power
51234
ZL=50
C2C
1
Supply V
234
Directional
RA45H4045MR
RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
TEST BLOCK DIAGRAM
Meter
Attenuator
Spectrum
Analyzer
Coupler
-
+
DC Power
DUT
+
-
DC Power
ZG=50
Power
Meter
Directional
Coupler
Attenuator
Pre-
amplifier
Attenuator
Generator
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (P
5 RF Ground (Case)
Signal
)
out
EQUIVALENT CIRCUITEQUIVALENT CIRCUIT
1
Publication Date : Oct．2011
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6
Page 7
< Silicon RF Power Modules >
RA45H4045MR
RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap is
attached by Silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and coated
by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching circuits.
Wire leads soldered onto the alumina substrate provide DC and RF connection.
Following conditions shall be avoided:
a) Bending forces on the alumina substrate (for example during screwing or by fast thermal changes)
b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion)
c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichloroethylene)
d) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc.
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V.Appropriate ESD precautions are required.
Mounting:
The heat sink flatness shall be less than 50µm (not flat heat sink or particles between module and heat sink may cause
the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later when thermal
expansion forces are added).
Thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the
bending stress on the ceramic substrate caused by temperature difference to the heat sink.
The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB.
M3 screws are recommended with tightening torque 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads shall be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At P
=45W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
out
P
Stage
st
1
nd
2
rd
3
in
(W)
0.05 2.0 23.0 0.24
2.0 12.0 2.4 2.80
12.0 45.0 1.2 6.80
The channel temperatures of each stage transistor Tch= T
T
= T
ch1
T
= T
ch2
T
= T
ch3
+ (12.5V x 0.24A – 2.0W + 0.05W) x 23.0°C/W = T
case
+ (12.5V x 2.80A - 12.0W + 2.0W) x 2.4°C/W = T
case
+ (12.5V x 6.80A - 45.0W + 12.0W) x 1.2°C/W = T
case
For long term reliability the module case temperature T
T
=60°C and P
air
=45W the required thermal resistance R
out
sink, including the contact resistance, is:
R
th(case-air)
= (90°C - 60°C) / (45W/35% – 45W + 0.05W) = 0.36 °C/W
When mounting the module with the thermal resistance of 0.36 °C/W, the channel temperature of each stage transistor is:
T
= T
= T
= T
+ 54.2 °C
air
+ 90.0 °C
air
+ 92.4 °C
air
ch1
T
ch2
T
ch3
175°C maximum rating for the channel temperature ensures application under derated conditions.
Output Power Control:
Depending on linearity following 2 methods are recommended to control the output power:
a) Non-linear FM modulation:
By Gate voltage VGG.
When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage current
is flowing from the battery into the Drain.
Around VGG=4V the output power and Drain current increases strongly.
Around VGG=4.5V, latest at VGG=5V, the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin. The Gate voltage is used to set the Drain quiescent current for the required linearity.
P
out
(W)
R
th(ch-case)
(°C/W)
IDD@ T=35%
(A)
+ (VDDx IDD- P
case
is better kept below 90°C. For an ambient temperature
case
th (case-air)
12.5
+ 24.2 °C
case
+ 60.0 °C
case
+ 62.4 °C
case
= ( T
V
(V)
DD
+ Pin) x R
out
- T
case
) / ( (P
air
th(ch-case)
/ T) - P
out
are:
+ Pin) of the heat
out
Publication Date : Oct．2011
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< Silicon RF Power Modules >
1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a
possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that
his products without cause damage for human and
Please confirm additional details
ation
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
In the application, which is base station applications and
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
d about predicted operating life time of
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi
itive to ESD voltage therefore
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
sink in conjunction with other cooling methods as needed (fan,
for RD series products lower than 120deg/C(in case of
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
eded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
ssembly of these products into the equipment, please refer to the
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of
RA45H4045MR
RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
Oscillation:
To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain, a
4.700pF chip capacitor, located close to the module, and a 22µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module ?
b) Is the load impedance ZL=50 ?
c) Is the source impedance ZG=50 ?
ATTENTION:
At the near the product,do not place the combustible material that have possibilities to arise the fire.
do not leakage the unnecessary electric wave and use t
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet.
regarding operation of these products from the formal specification sheet. For copies of the formal specific
sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed
for consumer mobile communication terminals and were not specifically designed for use in other applications.
under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-
period and others as needed. For the reliability report which is describe
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sens
appropriate ESD precautions are required.
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
recommended to utilize a sufficient sized heat-
etc.) to keep the channel temperature
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
exce
extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
7. For specific precautions regarding a
supplementary items in the specification sheet.
way from it’s original form.
this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
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< Silicon RF Power Modules >
RA45H4045MR
RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
programs, and algorithms, please be sure to evaluate all information as a total system before making a final
decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no
responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be exported
under a license from the Japanese government and cannot be imported into a country other than the approved
destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION.ALL RIGHTS RESERVED.
Publication Date : Oct．2011
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