MITSUBISHI RA33H1516M1 User Manual
< Silicon RF Power Modules >
BLOCK
DIAGRAM
RA33H1516M1
RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for
12.5volt mobile radios that operate in the 154- to 162MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases. With a gate
voltage around 3.0V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4V (typical) and 5V (maximum). At VGG=5V, the typical
gate current is 1 mA.
This module is designed for non-linear FM modulation.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>33W, T>50% @ VDD=12.5V, VGG=5V, Pin=10mW
out
• Broadband Frequency Range: 154-162MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 46 x 14.4 x 6.3 mm
1
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
2
)
out
3
PACKAGE CODE: H57
4
5
RoHS COMPLIANCE
• RA33H1516M1-201 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
RA33H1516M1-201
Antistatic tray,
20 modules/tray
Publication Date : Oct．2011
1
< Silicon RF Power Modules >
RA33H1516M1
RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage
DD
Gate Voltage
GG
Input Power 20 mW
in
Output Power 45 W
out
VGG<5V, ZG=ZL=50
VDD<12.5V, Pin=10mW, ZG=ZL=50
f=154-162MHz, VGG<5V
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
17 V
6 V
-25 to +100 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 154 - 162 MHz
P
2f
3f
I
GG
— Stability
— Load VSWR Tolerance
Note 1 : This Item is tested by sampling test ( 10pcs / lot )
All parameters, conditions, ratings, and limits are subject to change without notice.
Output Power 33 - - W
out
Total Efficiency 50 - - %
T
2ndHarmonic - - -40 dBc
o
3rdHarmonic - - -40 dBc
o
Input VSWR
in
VDD=12.5V
VGG=5V
Pin=10mW
- - 3:1 —
Leakage Current VDD=12.5V,VGG=0V,Pin=0W - - 1 mA
VDD=10-15.2V, Pin=5-15mW,
P
<40W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=10mW, P
=33W (VGGcontrol),
out
Load VSWR=20:1
No parasitic oscillation Note1
No degradation or destroy —
Publication Date : Oct．2011
2
< Silicon RF Power Modules >
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
RA33H1516M1
RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
50
(W)
40
(-)
out
in
r
30
20
VDD=12.5V
10
INPUT VSWR
OUTPUT POWER P
VGG=5V
Pin=10mW
0
150 155 160 165 170
FREQUENCY f(MHz)
60
Gp
50
P
=+25°C, ZG=ZL=50, unless otherwise specified)
case
100
80
out
60
(%)
T
T
in
40
20
h
TOTAL EFFICIENCY
0
12
P
out
10
-20
-30
VDD=12.5V
VGG=5V
Pin=10mW
-40
-50
-60
HARMONICS (dBc)
-70
nd
2
rd
3
-80
150 155 160 165 170
FREQUENCY f(MHz)
60
Gp
P
50
12
out
10
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
f=154MHz,
I
DD
VDD=12.5V,
VGG=5V
0
-15 -10 -5 0 5 10 15
INPUT POWER Pin(dBm)
60
Gp
P
out
50
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
f=162MHz,
I
DD
VDD=12.5V,
VGG=5V
0
8
6
4
2
0
12
10
8
6
4
2
0
40
(A)
DD
I
DRAIN CURRENT
OUTPUT POWER
30
(dBm)
out
P
20
10
POWER GAIN Gp(dB)
I
DD
f=158MHz,
VDD=12.5V,
VGG=5V
0
8
(A)
6
DD
I
4
DRAIN CURRENT
2
0
-15 -10 -5 0 5 10 15
INPUT POWER Pin(dBm)
(A)
DD
I
DRAIN CURRENT
-15 -10 -5 0 5 10 15
INPUT POWER Pin(dBm)
Publication Date : Oct．2011
3
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