MITSUBISHI RA33H1516M1 User Manual

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< Silicon RF Power Modules >

BLOCK

DIAGRAM

RA33H1516M1

RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO

DESCRIPTION

The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for

12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.0V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation.

FEATURES

• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)

• P

>33W, T>50% @ VDD=12.5V, VGG=5V, Pin=10mW

out

• Broadband Frequency Range: 154-162MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=5V

• Module Size: 46 x 14.4 x 6.3 mm

1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (P 5 RF Ground (Case)

)

out

PACKAGE CODE: H57

RoHS COMPLIANCE

• RA33H1516M1-201 is a RoHS compliant product.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the lead in

electronic Ceramic parts. However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLYFORM

RA33H1516M1-201

Antistatic tray,

20 modules/tray

Publication Date : Oct．2011

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< Silicon RF Power Modules >

RA33H1516M1

RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO

MAXIMUM RATINGS

=+25°C, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS RATING UNIT

V V

case(OP)

Drain Voltage

Gate Voltage

Input Power 20 mW

Output Power 45 W

out

VGG<5V, ZG=ZL=50 VDD<12.5V, Pin=10mW, ZG=ZL=50

f=154-162MHz, VGG<5V Operation Case Temperature Range Storage Temperature Range -40 to +110 °C

stg

17 V

6 V

-25 to +100 °C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS

=+25°C, ZG=ZL=50, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 154 - 162 MHz



2f 3f



— Stability

— Load VSWR Tolerance

Note 1 : This Item is tested by sampling test ( 10pcs / lot ) All parameters, conditions, ratings, and limits are subject to change without notice.

Output Power 33 - - W

out

Total Efficiency 50 - - %

2ndHarmonic - - -40 dBc

3rdHarmonic - - -40 dBc

Input VSWR

VDD=12.5V VGG=5V Pin=10mW

- - 3:1 —

Leakage Current VDD=12.5V,VGG=0V,Pin=0W - - 1 mA

VDD=10-15.2V, Pin=5-15mW, P

<40W (VGGcontrol), Load VSWR=3:1

out

VDD=15.2V, Pin=10mW, P

=33W (VGGcontrol),

out

Load VSWR=20:1

No parasitic oscillation Note1

No degradation or destroy —

Publication Date : Oct．2011

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< Silicon RF Power Modules >

and INPUT VSWR versus FREQUENCY

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

RA33H1516M1

RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO

TYPICAL PERFORMANCE (T

OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY

(W)

(-)

out

VDD=12.5V

INPUT VSWR

OUTPUT POWER P

VGG=5V Pin=10mW

150 155 160 165 170

FREQUENCY f(MHz)



=+25°C, ZG=ZL=50, unless otherwise specified)

case

100

out

(%)



TOTAL EFFICIENCY

out

-20

-30

VDD=12.5V VGG=5V Pin=10mW

-40

-50

-60

HARMONICS (dBc)

-70

-80 150 155 160 165 170

FREQUENCY f(MHz)

out

10 40 30

(dBm)

out

OUTPUT POWER

POWER GAIN Gp(dB)

f=154MHz,

VDD=12.5V, VGG=5V

-15 -10 -5 0 5 10 15 INPUT POWER Pin(dBm)

out

50 40 30

(dBm)

out

OUTPUT POWER

POWER GAIN Gp(dB)

f=162MHz,

VDD=12.5V, VGG=5V

8 6 4 2 0

12 10 8 6 4 2 0

(A)

DRAIN CURRENT

OUTPUT POWER

(dBm)

out

20 10

POWER GAIN Gp(dB)

f=158MHz, VDD=12.5V, VGG=5V

(A)

DRAIN CURRENT

2 0

-15 -10 -5 0 5 10 15 INPUT POWER Pin(dBm)

(A)

DRAIN CURRENT

-15 -10 -5 0 5 10 15 INPUT POWER Pin(dBm)

Publication Date : Oct．2011

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< Silicon RF Power Modules >

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

OUTPUT POWER and DRAIN CURRENT

versus GATE VOLTAGE

OUTPUT POWER and DRAIN CURRENT

versus GATE VOLTAGE

RA33H1516M1

RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO

TYPICAL PERFORMANCE (T

f=154MHz,

(W)

Pin=10mW

out

VGG=5V

40 30 20 10

OUTPUT POWER P

2 4 6 8 10 12 14 16

DRAIN VOLTAGE VDD(V)

f=162MHz,

(W)

Pin=10mW,

out

VGG=5V

40 30 20 10

OUTPUT POWER P

2 4 6 8 10 12 14 16

DRAIN VOLTAGE VDD(V)

=+25°C, ZG=ZL=50, unless otherwise specified)

case

12 10

out

(A)

8 6 4 2

DRAIN CURRENT I

f=158MHz,

(W)

Pin=10mW

out

VGG=5V

40 30 20 10

OUTPUT POWER P

2 4 6 8 10 12 14 16

12 10

out

(A)

8 6 4

DRAIN CURRENT I

DRAIN VOLTAGE VDD(V)

12 10

out

(A)

8 6 4 2

DRAIN CURRENT I

f=154MHz, VDD=12.5V,

(W)

out

Pin=10mW

OUTPUT POWER P

2 2.5 3 3.5 4 4.5 5 5.5

GATE VOLTAGE VGG(V)

f=162MHz, VDD=12.5V,

(W)

out

Pin=10mW

OUTPUT POWER P

2 2.5 3 3.5 4 4.5 5 5.5

GATE VOLTAGE VGG(V)

Publication Date : Oct．2011

out

(A)

DRAIN CURRENT I

f=158MHz, VDD=12.5V,

(W)

out

Pin=10mW

out

OUTPUT POWER P

(A)

DRAIN CURRENT I

2 2.5 3 3.5 4 4.5 5 5.5

GATE VOLTAGE VGG(V)

(A)

out

DRAIN CURRENT I

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< Silicon RF Power Modules >

RA33H1516M1

RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO

Publication Date : Oct．2011

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< Silicon RF Power Modules >

C1, C2

: 4700pF,22uF in parallel

Power

Spectrum

Directional

432

ZG=50



=50



RA33H1516M1

RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO

TEST BLOCK DIAGRAM

Signal

Generator

Attenuator

Pre-

amplifier

EQUIVALENT CIRCUIT

Attenuator

Power

Meter

Coupler

- + DC Power

Supply V

DUT

+ -

DC Power

Supply V

Analyzer

Directional

Coupler

Attenuator

Meter

1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (P

out

)

5 RF Ground (Case)

①

②

③

④

⑤

Publication Date : Oct．2011

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< Silicon RF Power Modules >

RA33H1516M1

RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO

RECOMMENDATIONS and APPLICATION INFORMATION:

Construction:

This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) ESD, surge, overvoltage in combination with load VSWR, and oscillation

ESD:

This MOSFET module is sensitive to ESD voltages down to 1000V.Appropriate ESD precautions are required.

Mounting:

A thermal compound between module and heat sink is recommended for low thermal contact resistance. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.

Soldering and Defluxing:

This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires).

Thermal Design of the Heat Sink:

At P

=33W, VDD=12.5V and Pin=10mW each stage transistor operating conditions are:

out

Stage

(W)

0.01 3.5 4.1 0.55

3.5 33.0 1.0 4.73

The channel temperatures of each stage transistor Tch= T

= T

ch1

= T

ch2

+ (12.5V x 0.55A – 3.5W + 0.01W) x 4.1°C/W =T

case

+ (12.5V x 4.73A - 33.0W + 3.5W) x 1.0°C/W = T

case

out

(W)

th(ch-case)

(°C/W)

IDD@ 

(A)

=50%

+ (VDDx IDD- P

case

12.5

+ 13.9 °C

case

+ 29.6 °C

case

(V)

+ Pin) x R

out

th(ch-case)

are:

For long-term reliability, it is best to keep the module case temperature (T temperature T

=60°C and P

air

=33W, the required thermal resistance R

out

) below 90°C. For an ambient

case

th (case-air)

= ( T

case

- T

) / ( (P

air

/ T) - P

out

Pin) of the heat sink, including the contact resistance, is: R

th(case-air)

= (90°C - 60°C) / (33W/50% – 33W + 0.01W) = 0.91 °C/W

When mounting the module with the thermal resistance of 0.91 °C/W, the channel temperature of each stage transistor is:

= T = T

+ 43.9 °C

air

+ 59.6 °C

air

ch1

ch2

The 175°C maximum rating for the channel temperature ensures application under derated conditions.

Output Power Control:

By the gate voltage (VGG). Around VGG=3.5V, the output power and drain current increases substantially. Around VGG=4V (typical) to VGG=5V (maximum), the nominal output power becomes available.

Oscillation:

To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a

4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50? c) Is the source impedance ZG=50?

Publication Date : Oct．2011

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< Silicon RF Power Modules >

have a

until cold after switch off.

that

is products without cause damage for human and

details

In particular, while these products are highly reliable for their designed purpose, they are not manufactured under

quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed

In the application, which is base station applications and

off frequency

during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain

predicted operating life time of

an authorized Mitsubishi

therefore

device is

It is

sink in conjunction with other cooling methods as needed (fan,

lower than 120deg/C(in case of

6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the

eded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to

the

Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any

, please refer the last page of

RA33H1516M1

RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO

ATTENTION:

1.High Temperature ; This product might have a heat generation while operation,Please take notice that possibility to receive a burn to touch the operating product directly or touch the product At the near the product,do not place the combustible material that have possibilities to arise the fire.

2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice do not leakage the unnecessary electric wave and use th property per normal operation.

3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment.

PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:

1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices.

2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications.

a necessary for critical communications elements and fixed station applications that operate with long term continuous transmission and a higher on-

period and others as needed. For the reliability report which is described about Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or Semiconductor product distributor.

3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage appropriate ESD precautions are required.

4. In the case of use in below than recommended frequency, there is possibility to occur that the deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.

5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.

exce extreme short current flow between the drain and the source of the device. These results causes in fire or injury.

7. For specific precautions regarding assembly of these products into the equipment, please refer to supplementary items in the specification sheet.

8. way from it’s original form.

9. For additional “Safety first” in your circuit design and notes regarding the materials this data sheet.

10. Please refer to the additional precautions in the formal specification sheet.

Publication Date : Oct．2011

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< Silicon RF Power Modules >

RA33H1516M1

RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi

semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.

•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s

rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

•All information contained in these materials, including product data, diagrams, charts, programs and algorithms

represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor

product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).

•When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.

•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials.

•If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination.

Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.

•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein.

Publication Date : Oct．2011

MITSUBISHI RA33H1516M1 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual