MITSUBISHI RA30H4552M1 User Manual

< Silicon RF Power Modules >

BLOCK

DIAGRAM

RA30H4552M1

RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

DESCRIPTION

The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for

12.5-volt mobile radios that operate in the 450- to 520-MHz range.

2

The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the nominal output signal (P

=30W) attenuates up to 60 dB.

out

The output power and the drain current increase as the gate
voltage increases. The output power and the drain current

1

increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that V

GG

is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 1mA.This module is
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input power

FEATURES

• Enhancement-Mode MOSFET Transistors

1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)

out

)

(IDD0 @ VDD=12.5V, VGG=0V)

• P

>30W, T>42% @ VDD=12.5V, VGG=5V, Pin=50mW

out

PACKAGE CODE: H2M

• Broadband Frequency Range: 450-520MHz

• Metal shield structure that makes the improvements of spurious
radiation simple

• Low-Power Control Current IGG=1mA (typ) @ VGG=5V

• Module Size: 67 x 19.4 x 9.9 mm

• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output
power with the input power.

3

4

5

RoHS COMPLIANCE

• RA30H4552M1 is a RoHS compliant product.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.

ORDERING INFORMATION:

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDER NUMBER SUPPLYFORM

RA30H4552M1-101

Antistatic tray,

10 modules/tray

Publication Date : Oct．2011

1

< Silicon RF Power Modules >

RA30H4552M1

RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

MAXIMUM RATINGS

(T

=+25°C, ZG=ZL=50, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS RATING UNIT

V
V

P

P

T

case(OP)

T

Drain Voltage VGG<5V, Pin=0W 17 V

DD

Gate Voltage VDD<12.5V, Pin=50mW 6 V

GG

Input Power 100 mW

in

Output Power 45 W

out

Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C

stg

f=450-520MHz,
VGG<5V

-30 to +100 °C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS

(T

=+25°C, ZG=ZL=50, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

F Frequency Range 450 - 520 MHz

P

T
2f



I

GG

I

DD

— Stability

— Load VSWR Tolerance

Output Power VDD=12.5V 30 - - W

out

Total Efficiency VGG=5V 42 - - %
2ndHarmonic Pin=50mW - - -40 dBc

o

Input VSWR - - 3:1 —

in

Gate Current VDD=0V, VGG=5V, Pin=0W - 1 - mA
Leakage Current VDD=17V, VGG=0V, Pin=0W - - 1 mA

VDD=10.0-15.2V, Pin=25-70mW,
5<P

<40W (VGGcontrol), Load VSWR=3:1

out

VDD=15.2V, Pin=50mW,
P

=30W (VGGcontrol), Load VSWR=20:1

out

No parasitic oscillation —

No degradation or destroy —

All parameters, conditions, ratings, and limits are subject to change without notice.

Publication Date : Oct．2011

2

< Silicon RF Power Modules >

versus FREQUENCY

INPUT VSWR versus FREQUENCY

OUTPUT POWER, POWER GAIN and

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER, POWER GAIN and

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

DRAIN CURRENT versus INPUT POWER

RA30H4552M1

RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

TYPICAL PERFORMANCE (T

OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY

70
60

(W)

out

50
40
30
20

TOTAL EFFICIENCY(%)

OUTPUT POWER P

10

430 440 450 460 470 480 490 500 510 520 530

5

(-)

4

in

r

3

2

INPUT VSWR

1

430 440 450 460 470 480 490 500 510 520 530

FREQUENCY f (MHz)

FREQUENCY f (MHz)

=+25°C, ZG=ZL=50, unless otherwise specified)

case

-30

h

T

P

out

-40

-50

-60

VDD=12.5V
VGG=5V
Pin=50mW

HARMONICS (dBc)

-70

-80

430 440 450 460 470 480 490 500 510 520 530

VDD=12.5V
VGG=5V
Pin=50mW

r

in

nd

2

FREQUENCY f (MHz)

VDD=12.5V
VGG=5V
Pin=50mW

rd

3

60

f=450MHz
VDD=12.5V

50

(dBm)

out

OUTPUT POWER P

VGG=5V

40
30
20

POWER GAIN Gp (dB)

10

I

DD

Gp

0

-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)

60

f=490MHz
VDD=12.5V

50

(dBm)

out

OUTPUT POWER P

VGG=5V

40
30
20

POWER GAIN Gp (dB)

10

I

DD

Gp

0

-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)

24

P

out

20

(A)

DD

16
12
8
4

DRAIN CURRENT I

0

60

f=470MHz
VDD=12.5V

50

(dBm)

out

VGG=5V

40
30
20

POWER GAIN Gp (dB)

10

OUTPUT POWER P

I

DD

Gp

P

out

0

24
20
16
12
8
4
0

(A)

DD

I

DRAIN CURRENT

-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)

24

P

out

20

(A)

DD

16
12
8
4

DRAIN CURRENT I

0

60

f=520MHz

50
40

VDD=12.5V
VGG=5V

(dBm)

out

30
20

POWER GAIN Gp (dB)

10

OUTPUT POWER P

I

DD

Gp

P

out

0

24
20
16
12
8
4
0

(A)

DD

DRAIN CURRENT I

-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)

Publication Date : Oct．2011

3