MITSUBISHI RA30H4452M User Manual
<Silicon RF Power Modules >
BLOCK
DIAGRAM
RA30H4452M
RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO
DESCRIPTION
The RA30H4452M is a 30-watt RF MOSFETAmplifier Module for
12.5-volt mobile radios that operate in the 440- to 520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the RF
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.5V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
out
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
2
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
out
)
3
PACKAGE CODE: H2S
41
5
RoHS COMPLIANCE
• RA30H4452M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
RA30H4452M-101
Antistatic tray,
10 modules/tray
Publication Date : Jul.2011
1
<Silicon RF Power Modules >
RA30H4452M
RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage VGG<5V 17 V
DD
Gate Voltage VDD<12.5V, Pin=0mW 6 V
GG
Input Power 100 mW
in
Output Power 45 W
out
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
f=440-520MHz,
ZG=ZL=50
-30 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 440 - 520 MHz
P
2f
I
GG
— Stability
— Load VSWR Tolerance
Output Power 30 - - W
out
Total Efficiency 40 - - %
T
2ndHarmonic - - -25 dBc
o
Input VSWR - - 3:1 —
in
Gate Current
VDD=12.5V,
VGG=5V,
Pin=50mW
VDD=10.0-15.2V, Pin=25-70mW,
P
<40W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW, P
=30W (VGGcontrol),
out
Load VSWR=20:1
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Jul.2011
2
<Silicon RF Power Modules >
=5V
T
control)
in
control)
=12.5V,
=12.5V,
out
T
out
T
=12.5V,
out
T
=12.5V,
out
RA30H4452M
RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER,TOTAL EFFICIENCY,
INPUT VSWRVS. FREQUENCY
60
50
(W)
in
out
40
30
20
INPUT VSWR ρ
OUTPUT POWER P
10
0
430 440 450 460 470 480 490 500 510 520 530
OUTPUT POWER, EFFICIENCY
50
(W)
40
out
30
20
10
OUTPUT POWER P
0
0 20 40 60 80 100
VS.INPUT POWER
INPUTPOWER Pin(mW)
=+25°C, ZG=ZL=50, unless otherwise specified)
case
η
@ Pout=30W(V
ρ
@ Pout=30W(V
P
out@VGG
120
V
DD
Pin=50mW
100
80
GG
60
40
GG
20
0
50
(W)
40
(%)
out
T
30
20
10
OUTPUT POWER P
TOTAL EFFICIE NCY η
0
0 20 40 60 80 100
FREQUENCY f(MHz)
100
P
out
η
(%)
80
T
60
40
20
f=480MHz,
V
DD
VGG=5V
TOTAL EFFICIE NCY η
0
50
(W)
40
out
30
20
10
OUTPUT POWER P
0
0 20 40 60 80 100
OUTPUT POWER,EFFICIENCY
VS. INPUT POWER
P
η
INPUTPOWER Pin(mW)
OUTPUT POWER,EFFICIENCY
VS. INPUT POWER
P
η
INPUTPOWER Pin(mW)
f=440MHz,
V
DD
VGG=5V
f=520MHz,
V
DD
VGG=5V
100
80
60
40
20
0
100
80
60
40
20
0
(%)
T
TOTAL EFFICIE NCY η
(%)
T
TOTAL EFFICIE NCY η
OUTPUT POWER, EFFICIENCY
VS.DRAIN SUPPLY VOLTAGE
70
60
(W)
out
50
: 440MHz
: 480MHz
- - - - - :520MHz
P
40
30
η
T
20
10
OUTPUT POWER P
0
0 2 4 6 8 10 12 14 16 18
DRAINSUPPLY VOLTAGE (VDD)
OUTPUT POWER, EFFICIENCY
VS.GATE SUPPLYVOLTAGE
60
50
(W)
out
40
30
20
10
OUTPUT POWER P
0
2 2.5 3 3.5 4 4.5 5 5.5 6
GATE SUPPLY VOLTAGE (VGG)
VGG=5V
Pin=50mW
P
out
η
T
f=480MHz,
VDD=12.5V,
Pin=50mW
120
100
80
60
40
20
0
140
120
100
80
60
40
20
0
OUTPUT POWER,EFFICIENCY
VS.GATE SUPPLY VOLTAGE
60
(%)
T
50
(W)
out
40
30
P
out
η
T
20
TOTAL EFFICIE NCY η
10
OUTPUT POWER P
0
2 2.5 3 3.5 4 4.5 5 5.5 6
GATE SUPPLY VOLTAGE (VGG)
f=440MHz,
VDD=12.5V,
Pin=50mW
120
100
80
60
40
20
0
(%)
T
TOTAL EFFICIE NCY η
OUTPUT POWER,EFFICIENCY
VS.GATE SUPPLY VOLTAGE
60
(%)
T
50
(W)
out
40
30
20
10
TOTAL EFFICIE NCY η
OUTPUT POWER P
0
2 2.5 3 3.5 4 4.5 5 5.5 6
GATE SUPPLY VOLTAGE (VGG)
P
η
T
f=520MHz,
VDD=12.5V,
Pin=50mW
120
100
80
60
40
20
0
(%)
T
TOTAL EFFICIE NCY η
Publication Date : Jul.2011
3
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