MITSUBISHI RA30H4047M1 User Manual
< Silicon RF Power Modules >
BLOCK
DIAGRAM
RA30H4047M1
RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 400- to 470-MHz range.
2
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the
nominal output signal (P
=30W) attenuates up to 60 dB. The output
out
power and the drain current increase as the gate voltage increases.
The output power and the drain current increase substantially with the
1
gate voltage around 0V(minimum). The nominal output power becomes
available at the state that VGGis 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 1mA.This module is designed
for non-linear FM modulation, but may also be used for linear
modulation by setting the drain quiescent current with the gate voltage
and controlling the output power with the input power.
1 RF Input (Pin)
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>30W, T>42% @ VDD=12.5V, VGG=5V, Pin=50mW
out
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
out
)
• Broadband Frequency Range: 400-470MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
PACKAGE CODE: H2M
• Low-Power Control Current IGG=1mA (typ) @ VGG=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output
power with the input power.
3
4
5
RoHS COMPLIANCE
• RA30H4047M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
RA30H4047M1-101
Antistatic tray,
10 modules/tray
Publication Date : Oct．2011
1
< Silicon RF Power Modules >
RA30H4047M1
RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage VGG<5V, Pin=0W 17 V
DD
Gate Voltage VDD<12.5V, Pin=50mW 6 V
GG
Input Power 100 mW
in
Output Power 45 W
out
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
f=400-470MHz,
VGG<5V
-30 to +100 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
F Frequency Range 400 - 470 MHz
P
T
2f
I
GG
I
DD
— Stability
— Load VSWR Tolerance
Output Power VDD=12.5V 30 - - W
out
Total Efficiency VGG=5V 42 - - %
2ndHarmonic Pin=50mW - - -40 dBc
o
Input VSWR - - 3:1 —
in
Gate Current VDD=0V, VGG=5V, Pin=0W - 1 - mA
Leakage Current VDD=17V, VGG=0V, Pin=0W - - 1 mA
VDD=10.0-15.2V, Pin=25-70mW,
5<P
<40W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW,
P
=30W (VGGcontrol), Load VSWR=20:1
out
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Oct．2011
2
< Silicon RF Power Modules >
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
versus FREQUENCY
INPUT VSWR versus FREQUENCY
RA30H4047M1
RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
70
60
(W)
50
out
40
30
20
TOTAL EFFICIENCY(%),
OUTPUT POWER P
10
0
390 400 410 420 430 440 450 460 470 480
5
4
(-)
in
r
3
2
INPUT VSWR
FREQUENCY f(MHz)
=+25°C, ZG=ZL=50, unless otherwise specified)
case
-30
h
T
-40
-50
P
out
VDD=12.5V
VGG=5V
Pin=50mW
-60
HARMONICS (dBc)
-70
-80
rd
3
390 400 410 420 430 440 450 460 470 480
VDD=12.5V
VGG=5V
Pin=50mW
r
in
nd
2
FREQUENCY f(MHz)
VDD=12.5V
VGG=5V
Pin=50mW
1
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
60
50
(dBm)
out
40
Gp
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
I
DD
0
-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
60
50
(dBm)
out
Gp
40
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
I
DD
0
-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
P
out
f=400MHz,
VDD=12.5V,
VGG=5V
P
out
f=450MHz,
VDD=12.5V,
VGG=5V
24
20
16
12
8
4
0
24
20
16
12
8
4
0
60
P
(A)
DD
50
(dBm)
out
40
Gp
out
30
20
POWER GAIN Gp(dB)
DRAIN CURRENT I
10
OUTPUT POWER P
0
I
DD
f=430MHz,
VDD=12.5V,
VGG=5V
24
20
16
12
8
4
0
(A)
DD
DRAIN CURRENT I
-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
60
(A)
DD
50
(dBm)
out
40
Gp
P
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
DRAIN CURRENT I
0
I
DD
f=470MHz,
VDD=12.5V,
VGG=5V
24
out
20
(A)
DD
16
12
8
4
DRAIN CURRENT I
0
-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
Publication Date : Oct．2011
3
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