MITSUBISHI RA30H3340M User Manual
<Silicon RF Power Modules >
BLOCK
DIAGRAM
RA30H3340M
RoHS Compliance ,
DESCRIPTION
The RA30H3340M is a 30-watt RF MOSFETAmplifier Module for
12.5-volt mobile radios that operate in the 330- to 400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the RF
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
4.0V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.5V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
out
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
2
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
out
)
3
41
5
RoHS COMPLIANCE
• RA30H3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
RA30H3340M-101
Antistatic tray,
10 modules/tray
Publication Date : Jul.2011
1
<Silicon RF Power Modules >
RA30H3340M
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage VGG<5V 17 V
DD
Gate Voltage VDD<12.5V, Pin=0mW 6 V
GG
Input Power 100 mW
in
Output Power 45 W
out
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
f=330-400MHz,
ZG=ZL=50
-30 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 330 - 400 MHz
P
2f
I
GG
— Stability
— Load VSWR Tolerance
Output Power 30 - - W
out
Total Efficiency 40 - - %
T
2ndHarmonic - - -25 dBc
o
Input VSWR - - 3:1 —
in
Gate Current
VDD=12.5V,
VGG=5V,
Pin=50mW
VDD=10.0-15.2V, Pin=25-70mW,
P
<40W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW, P
=30W (VGGcontrol),
out
Load VSWR=20:1
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Jul.2011
2
<Silicon RF Power Modules >
Pout
RA30H3340M
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER, TOTAL EFFICIENCY, OUTPUT POWER and TOTAL EFFICIENCY
and INPUT VSWR versus FREQUENCY versus INPUT POWER
60
50
(W)
in
out
40
η
30
20
INPUT VSWR ρ
10
OUTPUT POWER P
0
320 330 340 350 360 370 380 390 400 410
OUTPUT POWER and EFFICIENCY OUTPUT POWER and EFFICIENCY
50
45
(dBm)
out
40
35
OUTPUT POWER P
30
-10 -5 0 5 10 15 20
OUTPUT POWER and EFFICIENCY OUTPUT POWER and EFFICIENCY
versus DRAIN VOLTAGE versus GATE VOLTAGE
70
f=330/365/400MHz,
VGG=5V,
60
Pin=50mW
(W)
50
out
40
30
20
OUTPUT POWER P
10
0
0 2 4 6 8 10 12 14 16 18
DRAINSUPPLY VOLTAGE VDD(V)
OUTPUT POWER and EFFICIENCY
versus GATE VOLTAGE
60
f=365MHz
VDD=12.5V,
50
(W)
Pin=50mW
out
40
T
ρi n
FREQUENCY f(MHz)
versus INPUT POWER versus INPUT POWER
f
=36 5MH z,
VDD=12.5V ,
VGG=5V
INPUTPOWER Pin(dBm)
η
T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
120
VDD=12.5V,
VGG=5V,
Pin=50mW
P
ouT
100
80
(%)
T
η
60
50
f==330MHz,
VDD=12.5V ,
VGG=5V
45
40
40
35
20
TOTAL EFFICIENCY
OUTPUT POWER Pout (dBm)
0
100
P
out
80
η
T
60
30
-10 -5 0 5 10 15 20
INPUTPOWER Pin(dBm)
50
(%)
T
η
45
(dBm)
out
40
40
20
TOTAL EFFICIENCY
0
35
OUTPUT POWER P
30
-10 -5 0 5 10 15 20
INPUTPOWER Pin(dBm)
140
P
out
120
100
(%)
T
η
60
f=330MHz,
VDD=12.5V,
50
Pin=50mW
(W)
out
40
80
30
20
OUTPUT POWER P
10
0
: 330MHz
: 365MHz
- - - - - :400MHz
60
40
TOTAL EFFICIENCY
20
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
GATE VOLTAGE VGG(V)
OUTPUT POWER and EFFICIENCY
versus GATE VOLTAGE
120
100
(%)
P
out
T
η
80
60
f=400MHz,
VDD=12.5V,
50
Pin=50mW
(W)
out
40
Pou t
f=4 00M Hz,
VDD=12.5V,
VGG=5V
100
80
ηT
60
40
20
TOTAL EFFICIENCY ηT(%)
0
100
%)
80
T(
η
η
T
60
40
20
TOTAL EFFICIENCY
0
120
P
out
η
T
100
80
60
(%)
T
η
40
20
TOTL EFFICIENCY
0
120
100
P
out
(%)
T
η
80
30
20
10
OUTPUT POWER P
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
GATE VOLTAGE VGG(V)
Publication Date : Jul.2011
Eta
60
40
20
TOTAL EFFICIENCY
0
30
η
20
10
OUTPUT POWER P
0
2 2.5 3 3.5 4 4.5 5 5.5 6
GATE VOLTAGE VGG(V)
T
60
40
20
TOTAL EFFICIENCY
0
3
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