MITSUBISHI RA30H1317M1 User Manual

< Silicon RF Power Modules >

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DIAGRAM

RA30H1317M1

RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO

DESCRIPTION

The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for

12.5-volt mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors.
The output power and drain current increase as the gate voltage
increases. With a gate voltage around 3.5V (minimum), output
power and drain current increases substantially.
The nominal output power becomes available at 4V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation.

FEATURES

• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)

• P

>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW

out

• Broadband Frequency Range: 135-175MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=5V

• Module Size: 67 x 19.4 x 9.9 mm

1

1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)

2

)

out

3

PACKAGE CODE: H2M

4

5

RoHS COMPLIANCE

• RA30H1317M1-201 is a RoHS compliant product.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the lead in

electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLYFORM

RA30H1317M1-201

Antistatic tray,

10 modules/tray

Publication Date : Oct．2011

1

< Silicon RF Power Modules >

RA30H1317M1

RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO

MAXIMUM RATINGS

(T

=+25°C, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS RATING UNIT

V
V

P

P

T

case(OP)

T

Drain Voltage

DD

Gate Voltage

GG

Input Power 100 mW

in

Output Power 45 W

out

VGG<5V, ZG=ZL=50
VDD<12.5V, Pin=50mW, ZG=ZL=50

f=135-175MHz, VGG<5V
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C

stg

17 V

6 V

-30 to +100 °C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS

(T

=+25°C, ZG=ZL=50, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 135 - 175 MHz

P



2f
3f



I

GG

— Stability

— Load VSWR Tolerance

Output Power 30 - - W

out

Total Efficiency 40 - - %

T

2ndHarmonic - - -35 dBc

o

3rdHarmonic - - -45 dBc

o

Input VSWR

in

VDD=12.5V,VGG=5V,Pin=50mW

- - 3:1 —

Leakage Current VDD=12.5V,VGG=0V,Pin=0W - - 1 mA

VDD=10.0-15.2V, Pin=25-70mW,
P

<30W (VGGcontrol), Load VSWR=3:1

out

VDD=15.2V, Pin=50mW, P

=30W (VGGcontrol),

out

Load VSWR=20:1

No parasitic oscillation

More than –60dBc

No degradation or destroy —

—

All parameters, conditions, ratings, and limits are subject to change without notice.

Publication Date : Oct．2011

2

< Silicon RF Power Modules >

Harmonics (dBc)

RA30H1317M1

RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO

TYPICAL PERFORMANCE (T

OUTPUT POWER, TOTALEFFICIENCY,

50
45
40
35

(-)

(W)

in

out

30

ρ

25
20
15

Input VSWR

Output Power P

10

5
0

130 140 150 160 170 180

50
45
40
35

(dBm)

(dB)

p

out

30
25
20

Power Gain G

15

Output Power P

10

5
0

-10 -5 0 5 10 15 20

and INPUT VSWR versus Frequency

P

out

ρ

in

Frequency f(MHz)

OUTPUT POWER, POWERGAINand

DRAINCURRENT versus INPUT POWER

G

p

I

DD

Input Power Pin(dBm)

=+25°C, ZG=ZL=50, unless otherwise specified)

case

100
90
80
70

(%)

η

ｔ

60

t

η

50

VDD=12.5V
VGG=5V
Pin=50mW

40
30
20

Total Efficiency

10
0

-20

-25

-30

-35

-40

-45

-50

-55

-60

-65

-70

10
9

P

out

8
7
6

(dBm)

(A)

DD

(dB)

p

out

5
4

f=135MHz
VDD=12.5V
VGG=5V

3

Drain Current I

2
1

Power Gain G

Output Power P

0

2nd, 3rdHARMONICS versus FREQUENCY

VDD=12.5V
VGG=5V
Pin=50mW

nd

2

rd

3

130 140 150 160 170 180

Frequency f(MHz)

OUTPUT POWER, POWER GAINand

DRAINCURRENT versus INPUT POWER

50
45
40
35

G

p

P

out

30
25
20

I

DD

15
10

5

f=155MHz
VDD=12.5V
VGG=5V

0

-10 -5 0 5 10 15 20
Input Power Pin(dBm)

10
9
8
7
6
5
4
3
2
1
0

(A)

DD

Drain Current I

50
45
40
35

(dBm)

(dB)

p

out

30
25
20

Power Gain G

15

Output Power P

10

5
0

Publication Date : Oct．2011

OUTPUT POWER, POWERGAINand

DRAINCURRENT versus INPUT POWER

P

out

G

p

I

DD

f=175MHz
VDD=12.5V
VGG=5V

-10 -5 0 5 10 15 20
Input Power Pin(dBm)

10
9
8
7
6
5
4
3
2
1
0

(A)

DD

Drain Current I

3