MITSUBISHI RA30H0608M User Manual
<Silicon RF Power Modules >
BLOCK
DIAGRAM
RA30H0608M
RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO
DESCRIPTION
The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 66- to 88-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the RF
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
3V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
out
• Broadband Frequency Range: 66-88MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
1
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
2
)
out
3
PACKAGE CODE: H2S
4
5
RoHS COMPLIANCE
• RA30H0608M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
Antistatic tray,
RA30H0608M-101
10 modules/tray
Publication Date : Jul.2011
1
<Silicon RF Power Modules >
RA30H0608M
RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage
DD
Gate Voltage
GG
Input Power f=66-88MHz, VGG<5V 100 mW
in
Output Power f=66-88MHz, VGG<5V (Note 2) 45 W
out
VGG<5V, ZG=ZL=50
VDD<12.5V, Pin=50mW, ZG=ZL=50
17 V
6 V
Operation Case Temperature Range f=66-88MHz, VGG<5V -30 to +110 °C
Storage Temperature Range -40 to +110 °C
stg
The above parameters are independently guaranteed.
Note 1: The above parameters are independently guaranteed.
Note 2: This device may destroyed in a few minutes when output power from module is more than 45W.
Therefore, please keep the output power of device less than 45W even operating under the high
load VSWR conditions.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 66 - 88 MHz
P
2f
I
GG
— Stability
— Load VSWR Tolerance
Output Power 30 - - W
out
Total Efficiency 40 - - %
T
2ndHarmonic - - -25 dBc
o
Input VSWR - - 3:1 —
in
Gate Current
VDD=12.5V
VGG=5V
Pin=50mW
VDD=10.0-15.2V, Pin=25-70mW,
P
<30W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW, P
=30W (VGGcontrol),
out
Load VSWR=20:1(all phase)
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Jul.2011
2
<Silicon RF Power Modules >
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENTversus INPUT POWER
DRAIN CURRENT versus INPUT POWER
Pin=50mW
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
RA30H0608M
RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
80
70
(W)
(-)
60
out
in
50
P
40
30
20
INPUT VSWR
10
OUTPUT POWER P
0
60 65 70 75 80 85 90 95
60
50
Gp
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
out
in
FREQUENCY f(MHz)
I
DD
=+25°C, ZG=ZL=50, unless otherwise specified)
case
80
T
70
60
50
-20
-30
-40
40
VDD=12.5V
VGG=5V
(%)
30
T
20
10
TOTAL EFFICIENCY
0
-50
HARMONICS (dBc)
-60
-70
60 65 70 75 80 85 90 95
FREQUENCY f(MHz)
P
out
f=66MHz,
VDD=12.5V,
VGG=5V
24
(A)
20
DD
16
12
8
4
DRAIN CURRENT I
0
60
50
Gp
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
VDD=12.5V
nd
2
rd
3
VGG=5V
Pin=50mW
24
P
out
20
(A)
DD
I
16
f=77MHz,
VDD=12.5V,
I
DD
VGG=5V
12
8
4
DRAIN CURRENT
0
60
50
Gp
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
I
DD
0
-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
80
f=66MHz,
70
(W)
VGG=5V,
out
60
Pin=50mW
50
40
30
20
10
OUTPUT POWER P
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
P
out
f=88MHz,
VDD=12.5V,
VGG=5V
P
out
I
DD
24
20
(A)
DD
16
12
8
4
DRAIN CURRENT I
0
16
14
(A)
12
DD
10
8
6
4
2
DRAIN CURRENT I
0
80
f=77MHz,
70
(W)
VGG=5V,
out
60
Pin=50mW
P
out
50
40
30
20
10
OUTPUT POWER P
0
16
14
(A)
12
DD
10
8
6
I
DD
4
2
DRAIN CURRENT I
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
Publication Date : Jul.2011
3
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