MITSUBISHI RA20H8994M User Manual
<Silicon RF Power Modules >
BLOCK
DIAGRAM
RA20H8994M
RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA20H8994M is a 20-watt RF MOSFETAmplifier Module for
12.5-volt mobile radios that operate in the 896- to 941-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the RF
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.5V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>20W, T>25% @ VDD=12.5V, VGG=5V, Pin=50mW
out
• Broadband Frequency Range: 896-941MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
2
)
out
3
41
5
PACKAGE CODE: H2S
RoHS COMPLIANCE
• RA20H8994M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
RA20H8994M-101
Antistatic tray,
10 modules/tray
Publication Date : Jul.2011
1
<Silicon RF Power Modules >
RA20H8994M
RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage VGG<5V 17 V
DD
Gate Voltage VDD<12.5V, Pin=0mW 6 V
GG
Input Power 100 mW
in
Output Power 40 W
out
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
f=896-941MHz,
ZG=ZL=50
-30 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 896 - 941 MHz
P
2f
I
GG
— Stability
— Load VSWR Tolerance
Output Power
out
Total Efficiency 25 - - %
T
2ndHarmonic - - -30 dBc
o
Input VSWR - - 3:1 —
in
VDD=12.5V, VGG=5V, Pin=50mW
P
=20W(VGGcontrol)
out
VDD=12.5V
Pin=50mW
Gate Current
VDD=10.0-15.2V, Pin=25-70mW,
P
<20W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW, P
=20W (VGGcontrol),
out
Load VSWR=20:1
20 - - W
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Jul.2011
2
<Silicon RF Power Modules >
RA20H8994M
RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER,TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
60
50
(-)
in
40
r
30
20
INPUT VSWR
10
OUTPUT POWER Pout (W)
0
885 895 905 915 925 935 945 955
OUTPUT POWER,POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versusINPUT POWER
60
50
(dBm)
out
40
Gp
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
0
-10 -5 0 5 10 15 20
INPUTPOWER Pin(dBm)
OUTPUT POWER, POWERGAIN and OUTPUT POWER, POWERGAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
60
50
(dBm)
out
40
Gp
=5V
P
out@VGG
@P
=20W
h
T
out
=20W
r
in@Pout
FREQUENCY f(MHz)
I
DD
=+25°C, ZG=ZL=50, unless otherwise specified)
case
60
50
(%)
40
T
h
-20
-30
-40
30
VDD=12.5V
Pin=50mW
20
10
TOTAL EFFICIENCY
0
-50
HARMONICS (dBc)
-60
-70
nd
2
3
885 895 905 915 925 935 945 955
P
out
f=896MHz,
VDD=12.5V,
VGG=5V
24
20
(A)
DD
16
12
8
DRAIN CURRENT I
4
0
60
50
Gp
40
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER Pout (dBm)
I
DD
0
-10 -5 0 5 10 15 20
INPUTPOWER Pin(dBm)
24
P
out
20
(A)
DD
16
60
50
Gp
40
@P
=20W
out
rd
@P
=20W
out
FREQUENCY f(MHz)
VDD=12.5V
Pin=50mW
P
out
f=902MHz,
VDD=12.5V,
VGG=5V
P
out
24
20
16
12
8
4
DRAIN CURRENT IDD(A)
0
24
20
16
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
0
-10 -5 0 5 10 15 20
INPUTPOWER Pin(dBm)
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
80
70
60
50
40
30
20
OUTPUT POWER Pout(W)
10
0
2 4 6 8 10 12 14 16
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
f=896MHz,
VGG=5V,
Pin=50mW
DRAINVOLTAGE VDD(V)
Publication Date : Jul.2011
12
I
DD
f=935MHz,
VDD=12.5V,
VGG=5V
8
4
DRAIN CURRENT I
0
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER Pout (dBm)
I
DD
f=941MHz,
VDD=12.5V,
VGG=5V
0
12
8
4
DRAIN CURRENT IDD(A)
0
-10 -5 0 5 10 15 20
INPUTPOWER Pin(dBm)
16
14
12
I
DD
P
out
10
8
6
4
2
DRAIN CURRENT IDD(A)
0
80
f=902MHz,
70
VGG=5V,
(W)
Pin=50mW
60
out
50
40
I
DD
30
20
OUTPUT POWER P
10
0
2 4 6 8 10 12 14 16
DRAINVOLTAGE VDD(V)
16
14
12
10
8
P
out
6
4
2
DRAIN CURRENT IDD(A)
0
3
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