MITSUBISHI RA20H8087M User Manual
<Silicon RF Power Modules >
BLOCK
DIAGRAM
RA20H8087M
RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA20H8087M is a 20-watt RF MOSFETAmplifier Module for
12.5-volt mobile radios that operate in the 806- to 870-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the RF
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.5V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>20W, T>25% @ VDD=12.5V, VGG=5V, Pin=50mW
out
• Broadband Frequency Range: 806-870MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
2
)
out
3
41
5
PACKAGE CODE: H2S
RoHS COMPLIANCE
• RA20H8087M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
RA20H8087M-101
Antistatic tray,
10 modules/tray
Publication Date : Jul.2011
1
<Silicon RF Power Modules >
RA20H8087M
RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage VGG<5V 17 V
DD
Gate Voltage VDD<12.5V, Pin=0mW 6 V
GG
Input Power 100 mW
in
Output Power 40 W
out
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
f=806-870MHz,
ZG=ZL=50
-30 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 806 - 870 MHz
P
2f
I
GG
— Stability
— Load VSWR Tolerance
Output Power
out
Total Efficiency 25 - - %
T
2ndHarmonic - - -30 dBc
o
Input VSWR - - 3:1 —
in
VDD=12.5V, VGG=5V, Pin=50mW
P
=20W(VGGcontrol)
out
VDD=12.5V
Pin=50mW
Gate Current
VDD=10.0-15.5V, Pin=25-70mW,
P
=1 to 25W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW, P
=20W (VGGcontrol),
out
Load VSWR=8:1
20 - - W
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Jul.2011
2
<Silicon RF Power Modules >
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUTPOWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
RA20H8087M
RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
60
50
(W)
(-)
out
in
40
30
20
INPUT VSWR
10
OUTPUT POWER P
0
750 770 790 810 830 850 870
60
50
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
-15 -10 -5 0 5 10 15 20
P
=5V
out@VGG
@P
=20W
out
T
@P
=20W
in
out
FREQUENCY f(MHz)
Gp
I
DD
INPUT POWER Pin(dBm)
=+25°C, ZG=ZL=50, unless otherwise specified)
case
VDD=12.5V
Pin=50mW
60
50
40
30
(%)
T
20
10
TOTAL EFFICIENCY
0
-20
-30
-40
-50
HARMONICS (dBc)
-60
2
-70
750 770 790 810 830 850 870
FREQUENCY f(MHz)
P
out
f=764MHz,
VDD=12.5V,
VGG=5V
24
(A)
20
DD
16
12
8
4
DRAIN CURRENT I
0
60
50
Gp
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
VDD=12.5V
Pin=50mW
nd
@P
=20W
out
rd
3
@P
=20W
out
24
P
out
20
(A)
DD
16
12
I
DD
f=806MHz,
VDD=12.5V,
VGG=5V
8
4
DRAIN CURRENT I
0
60
50
Gp
P
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
I
DD
f=825MHz,
VDD=12.5V,
VGG=5V
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
60
50
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
Gp
I
DD
0
P
f=870MHz,
VDD=12.5V,
VGG=5V
24
out
20
(A)
DD
16
12
8
4
DRAIN CURRENT I
0
60
50
40
30
(dBm)
out
P
20
OUTPUT POWER
10
POWER GAIN Gp(dB)
Gp
I
DD
0
P
f=851MHz,
VDD=12.5V,
VGG=5V
24
out
20
(A)
DD
16
12
8
4
DRAIN CURRENT I
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
24
out
20
(A)
DD
16
12
8
4
DRAIN CURRENT I
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
Publication Date : Jul.2011
3
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