<Silicon RF Power Modules >
BLOCK
DIAGRAM
RA18H1213G
RoHS Compliance ,
DESCRIPTION
The RA18H1213G is a 18-watt RF MOSFETAmplifier Module for
12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the RF
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.5V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>18W, T>20% @ VDD=12.5V, VGG=5V, Pin=200mW
out
• Broadband Frequency Range: 1.24-1.30GHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
2
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
out
)
3
PACKAGE CODE: H2S
41
5
RoHS COMPLIANCE
• RA18H1213G-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
RA18H1213G-101
Antistatic tray,
10 modules/tray
Publication Date : Jul.2011
1
<Silicon RF Power Modules >
RA18H1213G
RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage
DD
Gate Voltage
GG
Input Power 300 mW
in
Output Power 30 W
out
VGG<5V, ZG=ZL=50
VDD<12.5V, Pin=0mW, ZG=ZL=50
f=1.24-1.30GHz,
ZG=ZL=50
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
17 V
6 V
-30 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 1.24 - 1.30 GHz
P
2f
I
GG
Gp Linear power gain
IMD3
IMD5
— Stability
— Load VSWR Tolerance
Output Power 18 - - W
out
Total Efficiency 20 - - %
T
2ndHarmonic - - -35 dBc
o
Input VSWR - - 3:1 —
in
Gate Current
3rdInter Modulation
Distortion
5thInter Modulation
Distortion
VDD=12.5V, VGG=5V, Pin=200mW
VDD=12.5V, VGG=5V, Pin=10dBm
VDD=12.5V, VGG=5V
Delta f=f1-f2=10KHz
P
=14W P.E.P. (Pincontrol)
out
VDD=10.0-15.2V, Pin=100/200/300mW,
P
<25W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=200mW,
P
=18W (VGGcontrol), Load VSWR=20:1
out
- 1 - mA
23 - - dB
- - -20 dBc
- - -25 dBc
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Jul.2011
2
<Silicon RF Power Modules >
RA18H1213G
RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
40
(W)
30
(-)
out
in
r
VDD=12.5V
VGG=5V
20
Pin=200mW
10
INPUT VSWR
OUTPUT POWER P
0
1220 1240 1260 1280 1300 1320
OUTPUT POWER, POWER GAINand OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
50
40
(dBm)
out
30
20
10
POWER GAIN Gp (dB)
OUTPUT POWER P
0
0 5 10 15 20 25
r
in
FREQUENCY f (MHz)
I
DD
INPUTPOWER Pin(dBm)
=+25°C, ZG=ZL=50, unless otherwise specified)
case
80
70
P
out
h
T
60
(%)
50
T
h
40
30
20
10
0
TOTAL EFFICIENCY
-20
VDD=12.5V
VGG=5V
-30
Pin=200mW
-40
rd
3
-50
HARMONICS (dBc)
-60
-70
1220 1240 1260 1280 1300 1320
10
P
out
Gp
(A)
8
DD
6
4
f=1240MHz
VDD=12.5V
VGG=5V
2
DRAIN CURRENT I
0
50
40
(dBm)
out
30
20
10
POWER GAIN Gp (dB)
OUTPUT POWER P
0
0 5 10 15 20 25
FREQUENCY f (MHz)
P
out
I
DD
INPUTPOWER Pin(dBm)
nd
2
Gp
f=1270MHz
VDD=12.5V
VGG=5V
10
8
(A)
DD
I
6
4
2
DRAIN CURRENT
0
OUTPUT POWER, POWER GAINand OUTPUT POWER and DRAIN CURRENT
DRAIN CURRENT versus INPUT POWER versus DRAIN VOLTAGE
50
P
40
(dBm)
out
30
out
20
I
POWER GAIN Gp (dB)
10
DD
OUTPUT POWER P
0
0 5 10 15 20 25
INPUTPOWER Pin(dBm)
f=1300MHz
VDD=12.5V
VGG=5V
10
8
(A)
DD
6
Gp
4
2
DRAIN CURRENT I
0
50
40
(W)
out
I
DD
30
20
10
OUTPUT POWER P
0
6 8 10 12 14 16
DRAINVOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
50
40
(W)
out
30
20
10
OUTPUT POWER P
0
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
I
DD
P
out
f=1270MHz
VGG=5V
Pin=200mW
6 8 10 12 14 16
DRAINVOLTAGE VDD(V)
10
8
(A)
DD
6
4
2
DRAIN CURRENT I
0
50
40
(W)
out
I
DD
30
20
10
OUTPUT POWER P
0
6 8 10 12 14 16
DRAINVOLTAGE VDD(V)
P
out
f=1240MHz
VGG=5V
Pin=200mW
P
out
f=1300MHz
VGG=5V
Pin=200mW
10
8
(A)
DD
6
4
2
DRAIN CURRENT I
0
10
8
(A)
DD
6
4
2
DRAIN CURRENT I
0
Publication Date : Jul.2011
3
<Silicon RF Power Modules >
IMD3,IMD5 (dBc)
IMD3,IMD5 (dBc)
IMD3,IMD5 (dBc)
RA18H1213G
RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
60
50
(W)
out
40
30
20
10
OUTPUT POWER P
0
3 3.5 4 4.5 5 5.5 6
OUTPUT POWER and DRAIN CURRENT 3rd,5th.INTERMODULATION DISTORTION
60
50
(W)
out
40
30
20
10
OUTPUT POWER P
0
3 3.5 4 4.5 5 5.5 6
versus GATE VOLTAGE versus GATE VOLTAGE
f=1240MHz
VDD=12.5V
Pin=200mW
GATE VOLTAGE VGG(V)
versus GATE VOLTAGE versus OUTPUT POWER
f=1300MHz
VDD=12.5V
Pin=200mW
GATE VOLTAGE VGG(V)
=+25°C, ZG=ZL=50, unless otherwise specified)
case
12
I
DD
P
out
10
(A)
8
DD
6
4
2
DRAIN CURRENT I
0
60
f=1270MHz
VDD=12.5V
50
(W)
Pin=200mW
out
40
30
20
10
OUTPUT POWER P
0
3 3.5 4 4.5 5 5.5 6
12
10
I
DD
(A)
8
DD
6
P
out
4
2
-20
-30
-40
-50
f=1240MHz
VDD=12.5V
VGG=5V
DRAIN CURRENT I
0
-60
26 28 30 32 34 36 38 40 42 44
OUTPUT POWER P
I
DD
P
out
GATE VOLTAGE VGG(V)
IMD3
IMD5
(dBm P.E.P.)
out
12
10
(A)
8
DD
6
4
2
DRAIN CURRENT I
0
3rd,5th.INTERMODULATION DISTORTION 3rd,5th.INTERMODULATION DISTORTION
versus OUTPUT POWER versus OUTPUT POWER
-20
f=1270MHz
VDD=12.5V
-30
VGG=5V
IMD3
-40
-50
IMD5
-60
26 28 30 32 34 36 38 40 42 44
OUTPUT POWER P
(dBm P.E.P.)
out
-20
f=1300MHz
VDD=12.5V
-30
VGG=5V
IMD3
-40
-50
IMD5
-60
26 28 30 32 34 36 38 40 42 44
OUTPUT POWER P
(dBm P.E.P.)
out
Publication Date : Jul.2011
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<Silicon RF Power Modules >
RA18H1213G
RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
OUTLINE DRAWING (mm)
66.0 ±0.5
3.0 ±0.3
7.25 ±0.8
21.0 ±0.5
9.5 ±0.5
2.0 ±0.5
14.0 ±1
12.0 ±1
16.5 ±1
60.0 ±0.5
51.5 ±0.5
5
2
1
43.5 ±1
55.5 ±1
3 4
Ø0.45 ±0.15
2-R2 ±0.5
17.0 ±0.5
4.0 ±0.3
3.1 +0.6/-0.4
0.09 ±0.02
Publication Date : Jul.2011
(50.4)
(9.88)
7.5 ±0.5
2.3 ±0.3
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (P
out
)
5 RF Ground (Case)
5
<Silicon RF Power Modules >
C1, C2
: 4700pF, 22uF in parallel
Power
Directional
DUT
54321
ZG=
50
Z
=50
C1
C2
123
4
5
RA18H1213G
RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
TEST BLOCK DIAGRAM
Signal
Generator
Attenuator
Pre-
amplifier
Attenuator
Power
Meter
Coupler
- +
DC Power
Supply V
Spectrum
Analyzer
Directional
Coupler
+ -
DC Power
GG
Supply V
DD
Attenuator
Meter
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (P
out
)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
Publication Date : Jul.2011
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<Silicon RF Power Modules >
RA18H1213G
RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is
attached withsilicone. The MOSFET transistorchips are diebonded onto metal, wire bondedto the substrate, andcoated
with resin. Lines on the substrate (eventually inductors), chipcapacitors, and resistors form the bias and matching circuits.
Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may
cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later
when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce
the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At P
The channel temperatures of each stage transistor Tch= T
=18W, VDD=12.5V and Pin=200mW each stage transistor operating conditions are:
out
P
Stage
T
ch1
T
ch2
T
ch3
1
2
3
st
nd
rd
= T
= T
= T
case
case
case
in
(W)
0.2 1.3 23.0 0.20
1.3 6.0 3.2 2.10
6.0 18.0 1.6 4.70
+ (12.5V x 0.20A– 1.3W + 0.2W) x 23.0°C/W = T
+ (12.5V x 2.10A– 6.0W + 1.3W) x 3.2°C/W = T
+ (12.5V x 4.70A- 18.0W + 6.0W) x 1.6°C/W = T
For long-term reliability, it is best to keep the module case temperature (T
temperature T
=60°C and P
air
P
out
(W)
R
th(ch-case)
(°C/W)
=18W, the required thermal resistance R
out
I
@ T=20%
DD
(A)
+ (VDDx IDD- P
case
V
DD
(V)
12.5
case
case
case
+ Pin) x R
out
+ 32.2°C
+ 69.0 °C
+ 74.8 °C
case
th (case-air)
) below 90°C. For an ambient
= ( T
th(ch-case)
- T
case
are:
) / ( (P
air
/ T) - P
out
+ Pin) of the heat sink, including the contact resistance, is:
R
th(case-air)
= (90°C - 60°C) / (18W/20% – 18W + 0.2W) = 0.42 °C/W
When mounting the module with the thermal resistance of 0.42 °C/W, the channel temperature of each stage
transistor is:
T
= T
= T
= T
+ 62.2 °C
air
+ 99.0 °C
air
+ 104.8 °C
air
ch1
T
ch2
T
ch3
out
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
Publication Date : Jul.2011
7
<Silicon RF Power Modules >
RA18H1213G
RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (VGG).
When thegate voltage is close to zero, the RF inputsignal isattenuated up to 60 dB and only a small leakage current flows from the
battery into the drain.
Around VGG=4V, the output power and drain current increases substantially.
Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) LinearAM modulation:
By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, thismodule is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip
capacitor,located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductancepass to the case of the module?
b) Is the load impedance ZL=50?
c) Is the source impedance ZG=50?
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility to receive a
burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not leakage the
unnecessary electric wave and use this products without cause damage for human and property per normal operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave
obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of
these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales
offices.
2.RA series products (RF power amplifier modules) and RDseries products (RF power transistors) are designed for consumer mobile
communication terminals and were not specifically designed for use in other applications.
In particular, while these productsare highly reliable for their designed purpose, they are not manufactured under a quality
assurance testingprotocol thatis sufficientto guaranteethe level of reliability typically deemed necessary for critical communications
elements. In the application, which is base station applications and fixed station applications that operate with long term continuous
transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate
setting of the maintain period and othersas needed. For the reliability report which is described about predicted operating life timeof
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product
distributor.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD
precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a
sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for RA series
products lower than 60deg/C under standard conditions, and less than 90deg/C under extreme conditions.
5.RAseries productsare designed to operate into a nominal load impedance of 50 ohms. Under the condition of operatinginto asevere
high loadVSWR approaching an open or short, an over load condition couldoccur. In the worst case there is riskfor burnout of the
transistors and burning of other parts including the substrate inthe module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. The
inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is recommended that verificationof no
parasitic oscillation be performed at the completed equipment level also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the
specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the productis modified in any way from it’s original
form.
9.For additional “Safety first” inyour circuit design and notes regarding the materials, please refer the last page of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Jul.2011
8
<Silicon RF Power Modules >
RA18H1213G
RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
Keep safety first in your circuit designs!
Mitsubishi ElectricCorporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use ofnon-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights,or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in thesematerials.
•All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi ElectricCorporation without noticedue to productimprovements or otherreasons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate allinformation as atotal system before making
a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
in part these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contactMitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
for further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION.ALLRIGHTS RESERVED.
Publication Date : Jul.2011
9
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