MITSUBISHI RA18H1213G User Manual
<Silicon RF Power Modules >
BLOCK
DIAGRAM
RA18H1213G
RoHS Compliance ,
DESCRIPTION
The RA18H1213G is a 18-watt RF MOSFETAmplifier Module for
12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the RF
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.5V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>18W, T>20% @ VDD=12.5V, VGG=5V, Pin=200mW
out
• Broadband Frequency Range: 1.24-1.30GHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
2
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
out
)
3
PACKAGE CODE: H2S
41
5
RoHS COMPLIANCE
• RA18H1213G-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
RA18H1213G-101
Antistatic tray,
10 modules/tray
Publication Date : Jul.2011
1
<Silicon RF Power Modules >
RA18H1213G
RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage
DD
Gate Voltage
GG
Input Power 300 mW
in
Output Power 30 W
out
VGG<5V, ZG=ZL=50
VDD<12.5V, Pin=0mW, ZG=ZL=50
f=1.24-1.30GHz,
ZG=ZL=50
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
17 V
6 V
-30 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 1.24 - 1.30 GHz
P
2f
I
GG
Gp Linear power gain
IMD3
IMD5
— Stability
— Load VSWR Tolerance
Output Power 18 - - W
out
Total Efficiency 20 - - %
T
2ndHarmonic - - -35 dBc
o
Input VSWR - - 3:1 —
in
Gate Current
3rdInter Modulation
Distortion
5thInter Modulation
Distortion
VDD=12.5V, VGG=5V, Pin=200mW
VDD=12.5V, VGG=5V, Pin=10dBm
VDD=12.5V, VGG=5V
Delta f=f1-f2=10KHz
P
=14W P.E.P. (Pincontrol)
out
VDD=10.0-15.2V, Pin=100/200/300mW,
P
<25W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=200mW,
P
=18W (VGGcontrol), Load VSWR=20:1
out
- 1 - mA
23 - - dB
- - -20 dBc
- - -25 dBc
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Jul.2011
2
<Silicon RF Power Modules >
RA18H1213G
RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
40
(W)
30
(-)
out
in
r
VDD=12.5V
VGG=5V
20
Pin=200mW
10
INPUT VSWR
OUTPUT POWER P
0
1220 1240 1260 1280 1300 1320
OUTPUT POWER, POWER GAINand OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
50
40
(dBm)
out
30
20
10
POWER GAIN Gp (dB)
OUTPUT POWER P
0
0 5 10 15 20 25
r
in
FREQUENCY f (MHz)
I
DD
INPUTPOWER Pin(dBm)
=+25°C, ZG=ZL=50, unless otherwise specified)
case
80
70
P
out
h
T
60
(%)
50
T
h
40
30
20
10
0
TOTAL EFFICIENCY
-20
VDD=12.5V
VGG=5V
-30
Pin=200mW
-40
rd
3
-50
HARMONICS (dBc)
-60
-70
1220 1240 1260 1280 1300 1320
10
P
out
Gp
(A)
8
DD
6
4
f=1240MHz
VDD=12.5V
VGG=5V
2
DRAIN CURRENT I
0
50
40
(dBm)
out
30
20
10
POWER GAIN Gp (dB)
OUTPUT POWER P
0
0 5 10 15 20 25
FREQUENCY f (MHz)
P
out
I
DD
INPUTPOWER Pin(dBm)
nd
2
Gp
f=1270MHz
VDD=12.5V
VGG=5V
10
8
(A)
DD
I
6
4
2
DRAIN CURRENT
0
OUTPUT POWER, POWER GAINand OUTPUT POWER and DRAIN CURRENT
DRAIN CURRENT versus INPUT POWER versus DRAIN VOLTAGE
50
P
40
(dBm)
out
30
out
20
I
POWER GAIN Gp (dB)
10
DD
OUTPUT POWER P
0
0 5 10 15 20 25
INPUTPOWER Pin(dBm)
f=1300MHz
VDD=12.5V
VGG=5V
10
8
(A)
DD
6
Gp
4
2
DRAIN CURRENT I
0
50
40
(W)
out
I
DD
30
20
10
OUTPUT POWER P
0
6 8 10 12 14 16
DRAINVOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
50
40
(W)
out
30
20
10
OUTPUT POWER P
0
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
I
DD
P
out
f=1270MHz
VGG=5V
Pin=200mW
6 8 10 12 14 16
DRAINVOLTAGE VDD(V)
10
8
(A)
DD
6
4
2
DRAIN CURRENT I
0
50
40
(W)
out
I
DD
30
20
10
OUTPUT POWER P
0
6 8 10 12 14 16
DRAINVOLTAGE VDD(V)
P
out
f=1240MHz
VGG=5V
Pin=200mW
P
out
f=1300MHz
VGG=5V
Pin=200mW
10
8
(A)
DD
6
4
2
DRAIN CURRENT I
0
10
8
(A)
DD
6
4
2
DRAIN CURRENT I
0
Publication Date : Jul.2011
3
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