MITSUBISHI RA13H8891MB User Manual

< Silicon RF Power Modules >

BLOCK

DIAGRAM

RA13H8891MB

RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO

DESCRIPTION

The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for

12.5-volt mobile radios that operate in the 880- to 915-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the
RF input signal attenuates up to 60 dB. The output power and drain

1

current increase as the gate voltage increases. With a gate voltage
around 4V (minimum), output power and drain current increases
substantially.
The nominal output power becomes available at 4.5V (typical) and
5V (maximum).At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also
be used for linear modulation by setting the drain quiescent current
with the gate voltage and controlling the output power with the input
power.

1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)

FEATURES

• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)

• P

>13W, T>35% @ VDD=12.5V, VGG=5V, Pin=1mW

out

• Broadband Frequency Range: 880-915MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=5V

• Module Size: 60.5 x 14 x 6.4 mm

• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output
power with the input power

2

)

out

PACKAGE CODE: H11S

3

4

5

RoHS COMPLIANCE

• RA13H8891MB-101 is a RoHS compliant products.

• RoHS compliance is Indicate by the letter “G” after the lot Marking.

• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLYFORM

RA13H8891MB-101

Antistatic tray,

20 modules/tray

Publication Date : Oct．2011

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< Silicon RF Power Modules >

RA13H8891MB

RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO

MAXIMUM RATINGS

(T

=+25°C, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS RATING UNIT

V
V

P

P

T

case(OP)

T

Drain Voltage VGG<5V 17 V

DD

Gate Voltage VDD<12.5V, Pin=0mW 6 V

GG

Input Power 5 mW

in

Output Power 20 W

out

Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C

stg

f=880-915MHz,
ZG=ZL=50

-30 to +110 °C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS

(T

=+25°C, ZG=ZL=50, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 880 - 915 MHz

P



2f



I

GG

— Stability

— Load VSWR Tolerance

Output Power 13 - - W

out

Total Efficiency 35 - - %

T

2ndHarmonic - - -30 dBc

o

Input VSWR - - 3:1 —

in

Gate Current

VDD=12.5V
VGG=5V
Pin=1mW

VDD=10.0-15.2V, Pin=0.5-2mW,
P

<20W (VGGcontrol), Load VSWR=3:1

out

VDD=15.2V, Pin=1mW, P

=13W (VGGcontrol),

out

Load VSWR=20:1

- 1 - mA

No parasitic oscillation —

No degradation or destroy —

All parameters, conditions, ratings, and limits are subject to change without notice.

Publication Date : Oct．2011

2

< Silicon RF Power Modules >

and INPUT VSWR versus FREQUENCY

OUTPUT POWER, POWER GAIN and

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER and DRAIN CURRENT

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

versus DRAIN VOLTAGE

RA13H8891MB

RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO

TYPICAL PERFORMANCE (T

OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY

30
25

(W)

(-)

out

in

VDD=12.5V



20

VGG=5V
Pin=1mW

15
10

INPUT VSWR

5

OUTPUT POWER P

0

875 885 895 905 915

70
60
50
40

(dBm)

30

out

P

20

OUTPUT POWER

POWER GAIN Gp(dB)

10

0

-30 -25 -20 -15 -10 -5 0



T



in

FREQUENCY f(MHz)

Gp

P

out

I

DD

INPUT POWER Pin(dBm)

=+25°C, ZG=ZL=50, unless otherwise specified)

case

120

P

out

100
80

-20

-30

-40

60
40
20
0

(%)

T



TOTAL EFFICIENCY

-50

HARMONICS (dBc)

-60

-70
875 885 895 905 915

f=880MHz,
VDD=12.5V,
VGG=5V

7
6

(A)

DD

5
4
3
2
1

DRAIN CURRENT I

0

70
60
50
40

(dBm)

30

out

P

20

OUTPUT POWER

POWER GAIN Gp(dB)

10

0

-30 -25 -20 -15 -10 -5 0

VDD=12.5V
VGG=5V
Pin=1mW

nd

2

rd

3

FREQUENCY f(MHz)

Gp

P

out

I

DD

f=900MHz,
VDD=12.5V,
VGG=5V

INPUT POWER Pin(dBm)

7
6

(A)

DD

I

5
4
3
2
1

DRAIN CURRENT

0

70
60

Gp

50

P

40

(dBm)

30

out

P

20

OUTPUT POWER

POWER GAIN Gp(dB)

10

out

I

DD

0

-30 -25 -20 -15 -10 -5 0
INPUT POWER Pin(dBm)

40

f=880MHz,

35

(W)

VGG=5V,

out

30

Pin=1mW

25
20

I

15

DD

10

5

OUTPUT POWER P

0

3 5 7 9 11 13 15

DRAIN VOLTAGE VDD(V)

Publication Date : Oct．2011

f=915MHz,
VDD=12.5V,
VGG=5V

P

out

7
6

(A)

DD

5
4
3
2
1

DRAIN CURRENT I

0

8
7

(A)

6

DD

5
4
3
2
1

DRAIN CURRENT I

0

40

f=900MHz,

35

(W)

VGG=5V,

out

30

Pin=1mW

P

out

25
20

I

15

DD

10

5

OUTPUT POWER P

0

8
7

(A)

6

DD

5
4
3
2
1

DRAIN CURRENT I

0

3 5 7 9 11 13 15

DRAIN VOLTAGE VDD(V)

3