MITSUBISHI RA13H8891MA User Manual
<Silicon RF Power Modules >
BLOCK
DIAGRAM
RA13H8891MA
RoHS Compliance ,
DESCRIPTION
The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 889- to 915-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the RF
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 3.5V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>13W, T>30% @ VDD=12.5V, VGG=5V, Pin=200mW
out
• Broadband Frequency Range: 889-915MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
2
1
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
out
)
3
PACKAGE CODE: H2S
4
5
RoHS COMPLIANCE
• RA13H8891MA-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
RA13H8891MA-101
Antistatic tray,
10 modules/tray
Publication Date : Jul.2011
1
<Silicon RF Power Modules >
RA13H8891MA
RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage VGG<5V 17 V
DD
Gate Voltage VDD<12.5V, Pin=200mW 6 V
GG
Input Power 400 mW
in
Output Power 25 W
out
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
f=889-915MHz,
ZG=ZL=50
-30 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 889 - 915 MHz
P
2f
I
GG
— Stability
— Load VSWR Tolerance
Output Power 13 - - W
out
Total Efficiency 30 - - %
T
2ndHarmonic - - -35 dBc
o
Input VSWR - - 3:1 —
in
Gate Current
VDD=12.5V
VGG=5V
Pin=200mW
VDD=10.0-15.2V, Pin=100-300mW,
P
=1 to 20W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=200mW, P
=13W (VGGcontrol),
out
Load VSWR=20:1
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Jul.2011
2
<Silicon RF Power Modules >
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUTPOWER
DRAIN CURRENT versus INPUTPOWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versusINPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
RA13H8891MA
RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
30
25
(W)
(-)
out
in
VDD=12.5V
20
Pin=200mW
15
10
INPUT VSWR
5
OUTPUT POWER P
0
875 885 895 905 915
FREQUENCY f(MHz)
50
40
30
(dBm)
out
20
P
OUTPUT POWER
POWER GAIN Gp(dB)
10
I
DD
0
0 5 10 15 20 25
INPUT POWER Pin(dBm)
P
@VGG=5V
out
@P
=13W
out
T
@P
=13W
in
out
Gp
=+25°C, ZG=ZL=50, unless otherwise specified)
case
120
100
80
-20
-30
-40
60
40
(%)
T
20
TOTAL EFFICIENCY
0
-50
HARMONICS (dBc)
-60
rd
3
-70
875 885 895 905 915
FREQUENCY f(MHz)
P
out
f=880MHz,
VDD=12.5V,
VGG=5V
5
(A)
4
DD
3
2
1
DRAIN CURRENT I
0
50
40
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
Gp
I
DD
0
0 5 10 15 20 25
INPUT POWER Pin(dBm)
2
@P
VDD=12.5V
Pin=200mW
nd
@P
=13W
out
=13W
out
P
out
5
(A)
4
DD
3
2
f=900MHz,
VDD=12.5V,
VGG=5V
1
DRAIN CURRENT I
0
50
40
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
Gp
I
DD
0
0 5 10 15 20 25
INPUT POWER Pin(dBm)
40
f=880MHz,
35
(W)
VGG=5V,
out
30
Pin=200mW
25
I
20
DD
15
10
5
OUTPUT POWER P
0
6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
P
out
f=915MHz,
VDD=12.5V,
VGG=5V
P
out
5
(A)
4
DD
3
2
1
DRAIN CURRENT I
0
8
7
(A)
6
DD
5
4
3
2
1
DRAIN CURRENT I
0
40
f=900MHz,
35
(W)
VGG=5V,
out
30
Pin=200mW
P
out
25
20
15
I
DD
10
5
OUTPUT POWER P
0
8
7
(A)
6
DD
5
4
3
2
1
DRAIN CURRENT I
0
6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
Publication Date : Jul.2011
3
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