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<Silicon RF Power Modules >
BLOCK
DIAGRAM
RA13H3340M
RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA13H3340M is a 13-watt RF MOSFETAmplifier Module for
12.5-volt mobile radios that operate in the 330- to 400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the
RF input signal attenuates up to 60 dB. The output power and drain
current increase as the gate voltage increases. With a gate
voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>13W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
out
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
1
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (FIN)
2
)
out
3
PACKAGE CODE: H2S
4
5
RoHS COMPLIANCE
• RA13H3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and
the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
Antistatic tray,
RA13H3340M-101
10 modules/tray
Publication Date : Jul.2011
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<Silicon RF Power Modules >
RA13H3340M
RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
Drain Voltage VGG<5V 17 V
DD
Gate Voltage VDD<12.5V, Pin=0mW 6 V
GG
Input Power 100 mW
in
f=330-400MHz,
P
Output Power 20 W
out
ZG=ZL=50
T
case(OP)
T
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
-30 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 330 - 400 MHz
P
Output Power 13 - - W
out
2f
I
GG
Total Efficiency 40 - - %
T
2ndHarmonic - - -30 dBc
o
Input VSWR - - 3:1 —
in
VDD=12.5V
VGG=5V
Pin=50mW
Gate Current
VDD=10.0-15.2V, Pin=25-70mW,
— Stability
P
<20W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW, P
=13W (VGGcontrol),
out
— Load VSWR Tolerance
Load VSWR=20:1
All parameters, conditions, ratings, and limits are subject to change without notice.
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
Publication Date : Jul.2011
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<Silicon RF Power Modules >
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAINand
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
Pin=50mW
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
RA13H3340M
RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
30
25
(W)
(-)
out
in
20
15
10
INPUT VSWR
5
OUTPUT POWER P
0
320 330 340 350 360 370 380 390 400 410
(dBm)
out
P
OUTPUT POWER
POWER GAIN Gp(dB)
FREQUENCY f(MHz)
50
40
30
20
10
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
=+25°C, ZG=ZL=50, unless otherwise specified)
case
120
P
out
100
80
T
VDD=12.5V
VGG=5V
in
Gp
60
(%)
40
T
20
TOTAL EFFICIENCY
0
P
out
5
(A)
4
DD
-20
-30
-40
-50
HARMONICS (dBc)
-60
-70
3
(dBm)
I
DD
f=330MHz,
VDD=12.5V,
VGG=5V
2
1
DRAIN CURRENT I
0
out
P
OUTPUT POWER
POWER GAIN Gp(dB)
VDD=12.5V
VGG=5V
Pin=50mW
nd
2
rd
3
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
50
40
Gp
P
out
30
I
20
10
0
DD
f=365MHz,
VDD=12.5V,
VGG=5V
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
5
(A)
4
DD
3
2
1
DRAIN CURRENT I
0
50
40
Gp
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
I
DD
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
30
f=330MHz,
(W)
25
VGG=5V,
out
Pin=50mW
20
15
10
5
OUTPUT POWER P
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
P
out
f=400MHz,
VDD=12.5V,
VGG=5V
P
out
I
DD
5
(A)
4
DD
3
2
1
DRAIN CURRENT I
0
6
5
(A)
DD
4
3
2
1
DRAIN CURRENT I
0
30
f=365MHz,
25
(W)
VGG=5V,
out
Pin=50mW
20
15
10
5
OUTPUT POWER P
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
P
out
6
5
(A)
DD
4
I
DD
3
2
1
DRAIN CURRENT I
0
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OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
RA13H3340M
RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
30
f=400MHz,
(W)
25
VGG=5V,
out
Pin=50mW
20
15
10
5
OUTPUT POWER P
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
30
f=330MHz,
VDD=12.5V,
(W)
25
out
Pin=50mW
20
15
10
=+25°C, ZG=ZL=50, unless otherwise specified)
case
6
P
out
5
(A)
DD
4
3
I
DD
2
1
DRAIN CURRENT I
0
6
5
P
out
I
DD
(A)
DD
4
3
2
30
f=365MHz,
VDD=12.5V,
25
(W)
out
Pin=50mW
20
15
10
6
5
P
out
I
DD
(A)
DD
4
3
2
5
OUTPUT POWER P
0
2.5 3 3.5 4 4.5 5 5.5
GATE VOLTAGE VGG(V)
30
f=400MHz,
VDD=12.5V,
(W)
25
out
Pin=50mW
20
15
10
5
OUTPUT POWER P
0
2.5 3 3.5 4 4.5 5 5.5
GATE VOLTAGE VGG(V)
1
DRAIN CURRENT I
0
5
OUTPUT POWER P
0
1
DRAIN CURRENT I
0
2.5 3 3.5 4 4.5 5 5.5
GATE VOLTAGE VGG(V)
6
5
P
out
I
DD
(A)
DD
4
3
2
1
DRAIN CURRENT I
0
Publication Date : Jul.2011
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<Silicon RF Power Modules >
RA13H3340M
RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
OUTLINE DRAWING (mm)
66.0 ±0.5
3.0 ±0.3
7.25 ±0.8
21.0 ±0.5
9.5 ±0.5
2.0 ±0.5
14.0 ±1
12.0 ±1
16.5 ±1
60.0 ±0.5
51.5 ±0.5
5
2
1
43.5 ±1
55.5 ±1
3 4
Ø0.45 ±0.15
2-R2 ±0.5
17.0 ±0.5
4.0 ±0.3
3.1 +0.6/-0.4
0.09 ±0.02
Publication Date : Jul.2011
(50.4)
(9.88)
7.5 ±0.5
2.3 ±0.3
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (P
out
)
5 RF Ground (Case)
5
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<Silicon RF Power Modules >
C1, C2
: 4700pF,22uF in parallel
Power
Directional
DUT
54321
ZG=50
Z
=50
C1
C2
RA13H3340M
RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
TEST BLOCK DIAGRAM
Signal
Generator
Attenuator
Pre-
amplifier
Attenuator
Power
Meter
Coupler
- +
DC Power
Supply V
Spectrum
Analyzer
Directional
Coupler
+ -
DC Power
GG
Supply V
DD
Attenuator
Meter
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (P
out
)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
1
2
3
4
5
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<Silicon RF Power Modules >
RA13H3340M
RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is
attached withsilicone. The MOSFET transistor chips are die bonded onto metal,wire bonded to the substrate, and coated
with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits.
Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may
cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later
when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce
the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At P
=13W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
out
P
Stage
st
1
nd
2
in
(W)
0.05 1.5 20.0 0.18
1.5 13.0 2.4 2.39
The channel temperatures of each stage transistor Tch= T
T
= T
ch1
T
= T
ch2
+ (12.5V x 0.18A– 1.5W + 0.05W) x 20.0°C/W = T
case
+ (12.5V x 2.39A- 13.0W + 1.5W) x 2.4°C/W = T
case
For long-term reliability, it is best to keep the module case temperature (T
temperature T
=60°C and P
air
P
out
(W)
R
th(ch-case)
(°C/W)
=13W, the required thermal resistance R
out
IDD@ T=40%
(A)
+ (VDDx IDD- P
case
V
DD
(V)
12.5
+ 16.0 °C
case
+ 44.1 °C
case
+ Pin) x R
out
) below 90°C. For an ambient
case
th (case-air)
= ( T
th(ch-case)
case
- T
are:
) / ( (P
air
/ T) - P
out
out
Pin) of the heat sink, including the contact resistance, is:
R
th(case-air)
= (90°C - 60°C) / (13W/40% – 13W + 0.05W) = 1.53 °C/W
When mounting the module with the thermal resistance of1.53 °C/W, the channel temperature of each stage transistor is:
T
= T
= T
+ 46.0 °C
air
+ 74.1 °C
air
ch1
T
ch2
+
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
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<Silicon RF Power Modules >
RA13H3340M
RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
Output Power Control:
By the gate voltage (VGG).
Around VGG=4V, the output power and drain current increases substantially.
Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a
4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50?
c) Is the source impedance ZG=50?
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility
to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not
leakage the unnecessary electric wave and use this products without cause damage for human and property per normal
operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric
wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding
operation of these products from the formal specification sheet. For copies of the formal specification sheets, please
contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for
consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured under
a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
necessary for critical communications elements. In the application, which is base station applications and fixed
station applications that operate with long term continuous transmission and a higher on-off frequency during
transmitting, please consider the derating, the redundancysystem, appropriate setting of the maintain period and
others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi
Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate
ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to
utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case
temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under
extreme conditions.
5.RAseries products are designed tooperate into a nominal load impedance of 50 ohms. Under the condition of operating
into a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case
there is risk for burn out of the transistors and burning of other parts including the substrate in the module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch
condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is
recommended that verification of no parasitic oscillation be performed at the completed equipment level also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary
items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way
from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this
data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Jul.2011
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<Silicon RF Power Modules >
RA13H3340M
RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
Keep safety first in your circuit designs!
Mitsubishi ElectricCorporation puts the maximumeffort into making semiconductor products betterand more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights,or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi ElectricCorporation without notice due to productimprovements orother reasons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure toevaluate all informationas a totalsystem before making
a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes
no responsibility for any damage, liabilityor other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
in part these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contactMitsubishi Electric Corporation or an authorizedMitsubishi Semiconductorproduct distributor
for further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTSRESERVED.
Publication Date : Jul.2011
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