MITSUBISHI RA13H1317M User Manual
<Silicon RF Power Modules >
BLOCK
DIAGRAM
RA13H1317M
RoHS Compliance ,
DESCRIPTION
The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the RF
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.5V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the output
power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>13W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
out
• Broadband Frequency Range: 135-175 MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power
135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
2
1
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
out
)
3
PACKAGE CODE: H2S
4
5
RoHS COMPLIANCE
• RA13H1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
RA13H1317M-101
Antistatic tray,
10 modules/tray
Publication Date : Jul.2011
1
<Silicon RF Power Modules >
RA13H1317M
RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage VGG<5V 17 V
DD
Gate Voltage VDD<12.5V, Pin=0mW 6 V
GG
Input Power
in
Output Power 20 W
out
f=135-175MHz,
ZG=ZL=50
100 mW
Operation Case TemperatureRange -30 to +110 °C
Storage Temperature Range -40 to +110 °C
stg
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 135 - 175 MHz
P
2f
I
GG
— Stability
— Load VSWR Tolerance
Output Power 13 - - W
out
T
o
in
Total Efficiency
2ndHarmonic
Input VSWR
VDD=12.5V
VGG=5V
Pin=50mW
40 - - %
- - -25 dBc
- - 3:1 —
Gate Current - 1 - mA
VDD=10.0-15.2V, Pin=25-70mW,
P
<20W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=50mW, P
=13W (VGGcontrol),
out
Load VSWR=20:1
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Jul.2011
2
<Silicon RF Power Modules >
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
RA13H1317M
RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
30
25
(W)
(-)
out
in
20
15
10
INPUT VSWR
5
OUTPUT POWER P
0
125 135 145 155 165 175 185
FREQUENCY f(MHz)
50
40
Gp
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
P
out
T
VDD=12.5V
Pin=50mW
in
I
DD
=+25°C, ZG=ZL=50, unless otherwise specified)
case
120
100
80
-20
-30
-40
60
40
(%)
T
20
TOTAL EFFICIENCY
0
-50
rd
HARMONICS (dBc)
-60
3
-70
125 135 145 155 165 175 185
FREQUENCY f(MHz)
P
out
f=135MHz,
VDD=12.5V,
VGG=5V
5
(A)
4
DD
3
2
1
DRAIN CURRENT I
0
50
40
Gp
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
I
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
2
DD
VDD=12.5V
Pin=50mW
nd
below -60dBc
P
out
f=155MHz,
VDD=12.5V,
VGG=5V
5
(A)
4
DD
I
3
2
1
DRAIN CURRENT
0
50
40
Gp
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
I
DD
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
30
f=135MHz,
(W)
25
VGG=5V,
out
Pin=50mW
20
P
out
15
10
5
OUTPUT POWER P
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
P
out
f=175MHz,
VDD=12.5V,
VGG=5V
I
DD
5
(A)
4
DD
3
2
1
DRAIN CURRENT I
0
6
5
(A)
DD
4
3
2
1
DRAIN CURRENT I
0
30
f=155MHz,
25
(W)
VGG=5V,
out
Pin=50mW
20
P
out
15
I
10
5
OUTPUT POWER P
DD
0
6
5
(A)
DD
4
3
2
1
DRAIN CURRENT I
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
Publication Date : Jul.2011
3
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